Title : Low Optical Writing Energy Multibit Optoelectronic Memory Based on SnS2 /h-BN/Graphene Heterostructure.

Pub. Date : 2021 Nov

PMID : 34622561






2 Functional Relationships(s)
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1 Low Optical Writing Energy Multibit Optoelectronic Memory Based on SnS2 /h-BN/Graphene Heterostructure. Graphite sodium voltage-gated channel alpha subunit 11 Homo sapiens
2 Here, the authors report an optoelectronic memory based on SnS2 /h-BN/graphene heterostructure with an extremely low photo-generated hole tunneling barrier of 0.23 eV. Graphite sodium voltage-gated channel alpha subunit 11 Homo sapiens