Title : Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation.

Pub. Date : 2020 Oct 27

PMID : 33134727






1 Functional Relationships(s)
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1 Highly rectifying ideal diode manufactured from Al/Si/Sn on the FTO layer annealed for 24 h indicates that this device has a great opportunity for the optoelectronic device applications. Tin FTO alpha-ketoglutarate dependent dioxygenase Homo sapiens