Title : A novel method for preparing stoichiometric SnO(2) thin films at low temperature.

Pub. Date : 2009 Apr

PMID : 19405696






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1 Here we report a novel method to prepare stoichiometric tin oxide by modifying the known plasma enhanced chemical vapor deposition technique using SnCl(4)-xH(2)O as precursor and O(2) as reactant gas at various temperatures from 300 to 800 degrees C. Tetragonal rutile structure of SnO(2) was found, grown along the [110] direction. stannic oxide strawberry notch homolog 1 Homo sapiens