Title : A Novel Bidirectional AlGaN/GaN ESD Protection Diode.

Pub. Date : 2022 Jan 15

PMID : 35056300






2 Functional Relationships(s)
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1 Despite the superior working properties, GaN-based HEMTs and systems are still confronted with the threat of a transient ESD event, especially for the vulnerable gate structure of the p-GaN or MOS HEMTs. hemts gigaxonin Homo sapiens
2 Despite the superior working properties, GaN-based HEMTs and systems are still confronted with the threat of a transient ESD event, especially for the vulnerable gate structure of the p-GaN or MOS HEMTs. hemts gigaxonin Homo sapiens