Title : Effect of Point Defects on Electronic Structure of Monolayer GeS.

Pub. Date : 2021 Nov 4

PMID : 34835724






2 Functional Relationships(s)
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1 In terms of formation energy, monolayer GeS with Ge vacancies is more stable than that with S vacancies, and notably GeS with Ge substituted with Sn is most favorable within the range of chemical potential considered. Tin RRAD and GEM like GTPase 1 Homo sapiens
2 In terms of formation energy, monolayer GeS with Ge vacancies is more stable than that with S vacancies, and notably GeS with Ge substituted with Sn is most favorable within the range of chemical potential considered. Tin RRAD and GEM like GTPase 1 Homo sapiens