Title : Nano-scale SiO2 patterned n-type GaN substrate for 380 nm ultra violet light emitting diodes.

Pub. Date : 2014 Aug

PMID : 25936066






2 Functional Relationships(s)
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Protein Name
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1 Wet etched self-assembled indium tin oxide (ITO) nano clusters serves as dry etching mask for converting the SiO2 layer grown on n-GaN template into SiO2 nano dots by inductively coupled plasma etching. indium tin oxide gigaxonin Homo sapiens
2 Wet etched self-assembled indium tin oxide (ITO) nano clusters serves as dry etching mask for converting the SiO2 layer grown on n-GaN template into SiO2 nano dots by inductively coupled plasma etching. indium tin oxide gigaxonin Homo sapiens