PMID-sentid	Pub_year	Sent_text	comp_official_name	comp_offset	protein_name	organism	prot_offset
32672165-5	2020	By contrast, the Vf at 20 A/cm2 in the TJ microLEDs utilizing SAG is significantly reduced to be 3.24 to 3.31 V. Moreover, the Vf in the SAG TJ microLEDs is independent on sizes, suggesting that the hydrogen is effectively removed through the holes on top of the p-GaN surface by SAG.	sagopilone	62-65	gigaxonin	Homo sapiens	265-268
32672165-5	2020	By contrast, the Vf at 20 A/cm2 in the TJ microLEDs utilizing SAG is significantly reduced to be 3.24 to 3.31 V. Moreover, the Vf in the SAG TJ microLEDs is independent on sizes, suggesting that the hydrogen is effectively removed through the holes on top of the p-GaN surface by SAG.	Hydrogen	199-207	gigaxonin	Homo sapiens	265-268
32672165-5	2020	By contrast, the Vf at 20 A/cm2 in the TJ microLEDs utilizing SAG is significantly reduced to be 3.24 to 3.31 V. Moreover, the Vf in the SAG TJ microLEDs is independent on sizes, suggesting that the hydrogen is effectively removed through the holes on top of the p-GaN surface by SAG.	sagopilone	137-140	gigaxonin	Homo sapiens	265-268
31961336-4	2020	The latter are fitted against experimental data of GaN in the wurtzite structure and benchmarked for the zinc-blende and rock-salt polymorphs.	wurtzite	62-70	gigaxonin	Homo sapiens	51-54
31947918-3	2020	High resolution X-ray diffraction measurements show that upon InGaN re-growths on these InGaN-on-porous GaN pseudo-substrates, not only was the regrown layer partially relaxed, but the degree of relaxation of the InGaN pseudo-substrate layer on top of the porous GaN also showed an increase in the a-lattice constant.	gallium arsenide	62-67	gigaxonin	Homo sapiens	90-93
32287250-0	2020	Demonstration of ohmic contact using ${ {\rm MoO}_{\rm x} }/{\rm Al}$MoOx/Al on p-GaN and the proposal of a reflective electrode for AlGaN-based DUV-LEDs.	Aluminum	65-67	gigaxonin	Homo sapiens	82-85
32287250-0	2020	Demonstration of ohmic contact using ${ {\rm MoO}_{\rm x} }/{\rm Al}$MoOx/Al on p-GaN and the proposal of a reflective electrode for AlGaN-based DUV-LEDs.	aluminum gallium nitride	133-138	gigaxonin	Homo sapiens	82-85
32362707-9	2020	Our study suggests while GAN is able to attain formalin fixed and paraffin embedded tissue image quality, GAN requires further prior knowledge as input to model intrinsic micro-anatomical details, such as capillary wall, urinary pole, nuclei placement, suggesting developing semi-supervised architectures by using these above details as prior information.	Formaldehyde	47-55	gigaxonin	Homo sapiens	25-28
32362707-9	2020	Our study suggests while GAN is able to attain formalin fixed and paraffin embedded tissue image quality, GAN requires further prior knowledge as input to model intrinsic micro-anatomical details, such as capillary wall, urinary pole, nuclei placement, suggesting developing semi-supervised architectures by using these above details as prior information.	Paraffin	66-74	gigaxonin	Homo sapiens	25-28
31964934-0	2020	The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene.	Aluminum	17-20	gigaxonin	Homo sapiens	66-69
31964934-0	2020	The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene.	Graphite	85-93	gigaxonin	Homo sapiens	66-69
31964934-1	2020	GaN nanocolumns were synthesized on single-layer graphene via radio-frequency plasma-assisted molecular beam epitaxy, using a thin migration-enhanced epitaxy (MEE) AlN buffer layer as nucleation sites.	Graphite	49-57	gigaxonin	Homo sapiens	0-3
31964934-1	2020	GaN nanocolumns were synthesized on single-layer graphene via radio-frequency plasma-assisted molecular beam epitaxy, using a thin migration-enhanced epitaxy (MEE) AlN buffer layer as nucleation sites.	Aluminum	164-167	gigaxonin	Homo sapiens	0-3
31964934-2	2020	Due to the weak nucleation on graphene, instead of an AlN thin-film we observe two distinguished AlN formations which affect the subsequent GaN nanocolumn growth: (i) AlN islands and (ii) AlN nanostructures grown along line defects (grain boundaries or wrinkles) of graphene.	Graphite	30-38	gigaxonin	Homo sapiens	140-143
31964934-2	2020	Due to the weak nucleation on graphene, instead of an AlN thin-film we observe two distinguished AlN formations which affect the subsequent GaN nanocolumn growth: (i) AlN islands and (ii) AlN nanostructures grown along line defects (grain boundaries or wrinkles) of graphene.	Aluminum	97-100	gigaxonin	Homo sapiens	140-143
31964934-2	2020	Due to the weak nucleation on graphene, instead of an AlN thin-film we observe two distinguished AlN formations which affect the subsequent GaN nanocolumn growth: (i) AlN islands and (ii) AlN nanostructures grown along line defects (grain boundaries or wrinkles) of graphene.	Aluminum	97-100	gigaxonin	Homo sapiens	140-143
31964934-2	2020	Due to the weak nucleation on graphene, instead of an AlN thin-film we observe two distinguished AlN formations which affect the subsequent GaN nanocolumn growth: (i) AlN islands and (ii) AlN nanostructures grown along line defects (grain boundaries or wrinkles) of graphene.	Aluminum	97-100	gigaxonin	Homo sapiens	140-143
31964934-2	2020	Due to the weak nucleation on graphene, instead of an AlN thin-film we observe two distinguished AlN formations which affect the subsequent GaN nanocolumn growth: (i) AlN islands and (ii) AlN nanostructures grown along line defects (grain boundaries or wrinkles) of graphene.	Graphite	266-274	gigaxonin	Homo sapiens	140-143
31964934-3	2020	Structure (i) leads to the formation of vertical GaN nanocolumns regardless of the number of AlN MEE cycles, whereas (ii) can result in random orientation of the nanocolumns depending on the AlN morphology.	Aluminum	191-194	gigaxonin	Homo sapiens	49-52
31964934-4	2020	Additionally, there is a limited amount of direct GaN nucleation on graphene, which induces non-vertical GaN nanocolumn growth.	Graphite	68-76	gigaxonin	Homo sapiens	50-53
31964934-4	2020	Additionally, there is a limited amount of direct GaN nucleation on graphene, which induces non-vertical GaN nanocolumn growth.	Graphite	68-76	gigaxonin	Homo sapiens	105-108
31964934-7	2020	The AlN buffer layer with lowest AlN coverage also provides the best result with respect to high-quality and vertically-aligned GaN nanocolumns.	Aluminum	4-7	gigaxonin	Homo sapiens	128-131
32286797-3	2020	Here, we first demonstrate that Cu nanoantennas on p-type gallium nitride (p-GaN) enable hot hole-driven photodetection across the visible spectrum.	Copper	32-34	gigaxonin	Homo sapiens	77-80
32286797-3	2020	Here, we first demonstrate that Cu nanoantennas on p-type gallium nitride (p-GaN) enable hot hole-driven photodetection across the visible spectrum.	gallium nitride	58-73	gigaxonin	Homo sapiens	77-80
32213675-0	2020	Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: up to the solubility limit and beyond.	Silicon	10-12	gigaxonin	Homo sapiens	36-39
32213675-0	2020	Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: up to the solubility limit and beyond.	silicon carbide	59-62	gigaxonin	Homo sapiens	36-39
32213675-0	2020	Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: up to the solubility limit and beyond.	Silicon	59-61	gigaxonin	Homo sapiens	36-39
32213675-1	2020	We report a novel mechanism that allows the incorporation of Si into GaN nanowires up to and beyond the solubility limit.	Silicon	61-63	gigaxonin	Homo sapiens	69-72
32221397-3	2020	We report how SATE can create uniform and organized GaN nanohole arrays from c-plane and (11-22) semi-polar GaN in a conventional MOVPE reactor.	sate	14-18	gigaxonin	Homo sapiens	52-55
32221397-3	2020	We report how SATE can create uniform and organized GaN nanohole arrays from c-plane and (11-22) semi-polar GaN in a conventional MOVPE reactor.	sate	14-18	gigaxonin	Homo sapiens	108-111
32168923-0	2020	Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates.	Zinc Oxide	53-56	gigaxonin	Homo sapiens	69-72
32168923-2	2020	The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by focused ion beam lithography.	Zinc Oxide	4-7	gigaxonin	Homo sapiens	72-75
32168923-5	2020	The specific configuration of the interface between the ZnO nanorods and GaN substrate created by the focused ion beam suppresses the surface leakage current and improves the current-voltage characteristics.	Zinc Oxide	56-59	gigaxonin	Homo sapiens	73-76
32040646-0	2020	Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN.	Hydrogen	0-8	gigaxonin	Homo sapiens	53-56
32040646-0	2020	Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN.	Carbon	23-29	gigaxonin	Homo sapiens	53-56
32040646-0	2020	Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN.	Magnesium	44-46	gigaxonin	Homo sapiens	53-56
32040646-1	2020	The effect of unintentionally doped hydrogen on the properties of Mg-doped p-GaN samples grown via metal-organic chemical vapor deposition (MOCVD) is investigated through room temperature photoluminescence (PL) and Hall and secondary ion mass spectroscopy (SIMS) measurements.	Hydrogen	36-44	gigaxonin	Homo sapiens	77-80
32040646-5	2020	This suggests that the co-doped hydrogen not only passivate MgGa, but also can passivate carbon impurities in Mg-doped p-GaN.	Hydrogen	32-40	gigaxonin	Homo sapiens	121-124
32040646-5	2020	This suggests that the co-doped hydrogen not only passivate MgGa, but also can passivate carbon impurities in Mg-doped p-GaN.	gallium arsenide	60-64	gigaxonin	Homo sapiens	121-124
32040646-5	2020	This suggests that the co-doped hydrogen not only passivate MgGa, but also can passivate carbon impurities in Mg-doped p-GaN.	Carbon	89-95	gigaxonin	Homo sapiens	121-124
31947918-3	2020	High resolution X-ray diffraction measurements show that upon InGaN re-growths on these InGaN-on-porous GaN pseudo-substrates, not only was the regrown layer partially relaxed, but the degree of relaxation of the InGaN pseudo-substrate layer on top of the porous GaN also showed an increase in the a-lattice constant.	gallium arsenide	88-93	gigaxonin	Homo sapiens	64-67
31947918-3	2020	High resolution X-ray diffraction measurements show that upon InGaN re-growths on these InGaN-on-porous GaN pseudo-substrates, not only was the regrown layer partially relaxed, but the degree of relaxation of the InGaN pseudo-substrate layer on top of the porous GaN also showed an increase in the a-lattice constant.	gallium arsenide	88-93	gigaxonin	Homo sapiens	64-67
31804060-0	2019	Ultra-robust Deep-UV Photovoltaic Detector Based on Graphene/(AlGa)2O3/GaN with High-Performance in Temperature Fluctuations.	Graphite	52-60	gigaxonin	Homo sapiens	71-74
31655922-1	2020	Giant axonal neuropathy (GAN) is an autosomal recessive disease caused by mutations in the GAN gene encoding gigaxonin.	gigaxonin	109-118	gigaxonin	Homo sapiens	0-23
31655922-1	2020	Giant axonal neuropathy (GAN) is an autosomal recessive disease caused by mutations in the GAN gene encoding gigaxonin.	gigaxonin	109-118	gigaxonin	Homo sapiens	25-28
31655922-1	2020	Giant axonal neuropathy (GAN) is an autosomal recessive disease caused by mutations in the GAN gene encoding gigaxonin.	gigaxonin	109-118	gigaxonin	Homo sapiens	91-94
31804060-2	2019	Here, a graphene/(AlGa)2O3/GaN device with a photoresponsivity of ~20 mA/W, a rise time of ~2 mus and a decay time of ~10 ms is presented at 0 V bias.	Graphite	8-16	gigaxonin	Homo sapiens	27-30
31804060-2	2019	Here, a graphene/(AlGa)2O3/GaN device with a photoresponsivity of ~20 mA/W, a rise time of ~2 mus and a decay time of ~10 ms is presented at 0 V bias.	aluminum gallium nitride	17-26	gigaxonin	Homo sapiens	27-30
31483596-1	2019	A method for suppressing impurities in GaN thin films grown via plasma-enhanced atomic deposition (PEALD) through the in situ pretreatment of Si (100) substrate with plasma was developed.	Silicon	142-144	gigaxonin	Homo sapiens	39-42
31483596-3	2019	After pretreatment, the thickness of the interfacial layer between GaN films and the substrates decreases from 2.0 to 1.6 nm, and the oxygen impurity content at the GaN/Si (100) interface reduces from 34 to 12%.	Silicon	169-171	gigaxonin	Homo sapiens	67-70
31882920-0	2019	Transferred monolayer MoS2 onto GaN for heterostructure photoanode: Toward stable and efficient photoelectrochemical water splitting.	molybdenum disulfide	22-26	gigaxonin	Homo sapiens	32-35
31882920-2	2019	Here, we report the synthesis and characterization of a novel heterostructure MoS2/GaN to be used as a photoanode for PEC-WS.	molybdenum disulfide	78-82	gigaxonin	Homo sapiens	83-86
31882920-2	2019	Here, we report the synthesis and characterization of a novel heterostructure MoS2/GaN to be used as a photoanode for PEC-WS.	CEP combination	118-121	gigaxonin	Homo sapiens	83-86
31882920-4	2019	Our experimental results reveal that MoS2/GaN photoanode achieved efficient light harvesting with photocurrent density of 5.2 mA cm-2 at 0 V vs Ag/AgCl, which is 2.6 times higher than pristine GaN.	molybdenum disulfide	37-41	gigaxonin	Homo sapiens	42-45
31882920-4	2019	Our experimental results reveal that MoS2/GaN photoanode achieved efficient light harvesting with photocurrent density of 5.2 mA cm-2 at 0 V vs Ag/AgCl, which is 2.6 times higher than pristine GaN.	molybdenum disulfide	37-41	gigaxonin	Homo sapiens	193-196
31882920-4	2019	Our experimental results reveal that MoS2/GaN photoanode achieved efficient light harvesting with photocurrent density of 5.2 mA cm-2 at 0 V vs Ag/AgCl, which is 2.6 times higher than pristine GaN.	Silver	147-151	gigaxonin	Homo sapiens	42-45
31882920-5	2019	Interestingly, MoS2/GaN exhibited a significantly enhanced applied-bias-photon-to-current conversion efficiency of 0.91%, whereas reference GaN yielded an efficiency of 0.32%.	molybdenum disulfide	15-19	gigaxonin	Homo sapiens	20-23
31882920-6	2019	The superior PEC performance of the MoS2/GaN photoelectrode is mainly related to the enhanced light absorption due to excellent photocatalytic behavior of MoS2, which reduces charge transfer resistance between the semiconductor and electrolyte interface, and the improvement of charge separation and transport.	CEP combination	13-16	gigaxonin	Homo sapiens	41-44
31882920-6	2019	The superior PEC performance of the MoS2/GaN photoelectrode is mainly related to the enhanced light absorption due to excellent photocatalytic behavior of MoS2, which reduces charge transfer resistance between the semiconductor and electrolyte interface, and the improvement of charge separation and transport.	molybdenum disulfide	36-40	gigaxonin	Homo sapiens	41-44
31882920-6	2019	The superior PEC performance of the MoS2/GaN photoelectrode is mainly related to the enhanced light absorption due to excellent photocatalytic behavior of MoS2, which reduces charge transfer resistance between the semiconductor and electrolyte interface, and the improvement of charge separation and transport.	molybdenum disulfide	155-159	gigaxonin	Homo sapiens	41-44
31882920-7	2019	This result gives a new perspective on the importance of MoS2 as a cocatalyst coated onto GaN to synthesize photoelectrodes for efficient solar energy conversion devices.	molybdenum disulfide	57-61	gigaxonin	Homo sapiens	90-93
31944090-3	2020	Here, we report that gigaxonin is modified by <italic>O</italic>-linked beta-<italic>N</italic>-acetylglucosamine (O-GlcNAc), a prevalent form of intracellular glycosylation, in a nutrient- and growth factor-dependent manner.	beta-<italic	72-84	gigaxonin	Homo sapiens	21-30
31944090-3	2020	Here, we report that gigaxonin is modified by <italic>O</italic>-linked beta-<italic>N</italic>-acetylglucosamine (O-GlcNAc), a prevalent form of intracellular glycosylation, in a nutrient- and growth factor-dependent manner.	n</italic>-acetylglucosamine	85-113	gigaxonin	Homo sapiens	21-30
31944090-4	2020	MS analyses of human gigaxonin revealed 9 candidate sites of O-GlcNAcylation, 2 of which : serine 272 and threonine 277 : are required for its ability to mediate IF turnover in gigaxonin-deficient human cell models that we created.	Serine	91-97	gigaxonin	Homo sapiens	21-30
31944090-4	2020	MS analyses of human gigaxonin revealed 9 candidate sites of O-GlcNAcylation, 2 of which : serine 272 and threonine 277 : are required for its ability to mediate IF turnover in gigaxonin-deficient human cell models that we created.	Serine	91-97	gigaxonin	Homo sapiens	177-186
31483596-3	2019	After pretreatment, the thickness of the interfacial layer between GaN films and the substrates decreases from 2.0 to 1.6 nm, and the oxygen impurity content at the GaN/Si (100) interface reduces from 34 to 12%.	Silicon	169-171	gigaxonin	Homo sapiens	165-168
31483596-2	2019	This approach leads to a superior GaN/Si (100) interface.	Silicon	38-40	gigaxonin	Homo sapiens	34-37
31483596-3	2019	After pretreatment, the thickness of the interfacial layer between GaN films and the substrates decreases from 2.0 to 1.6 nm, and the oxygen impurity content at the GaN/Si (100) interface reduces from 34 to 12%.	Oxygen	134-140	gigaxonin	Homo sapiens	165-168
31385709-2	2019	Here, we study the spontaneous emission of GaN/(Al,Ga)N nanowire ensembles grown on Si(111) by plasma-assisted molecular beam epitaxy.	Silicon	84-86	gigaxonin	Homo sapiens	43-46
30889560-3	2019	Upon hydrogen exposure, the molecular adsorption tuned the barrier height at the MoS2/GaN interface under the reverse biased condition, thus resulting in high sensitivity.	Hydrogen	5-13	gigaxonin	Homo sapiens	86-89
31067518-2	2019	Aero-GaN is made up of randomly arranged hollow GaN microtetrapods, which are obtained by direct growth using hydride vapor phase epitaxy of GaN on the sacrificial network of ZnO microtetrapods.	Zinc Oxide	175-178	gigaxonin	Homo sapiens	5-8
31067518-3	2019	A 2 mm thick aero-GaN sample exhibits electromagnetic shielding properties in the X-band similar to solid structures based on metal foams or carbon nanomaterials.	Metals	126-131	gigaxonin	Homo sapiens	18-21
31067518-3	2019	A 2 mm thick aero-GaN sample exhibits electromagnetic shielding properties in the X-band similar to solid structures based on metal foams or carbon nanomaterials.	Carbon	141-147	gigaxonin	Homo sapiens	18-21
31353367-4	2019	It is found that substituting Ga atoms in the GaN lattice with lighter atoms (e.g. boron atoms) with 50% concentration near the interface can increase the thermal boundary conductance (TBC) by up to 50%.	Gallium	30-32	gigaxonin	Homo sapiens	46-49
31353367-4	2019	It is found that substituting Ga atoms in the GaN lattice with lighter atoms (e.g. boron atoms) with 50% concentration near the interface can increase the thermal boundary conductance (TBC) by up to 50%.	Boron	83-88	gigaxonin	Homo sapiens	46-49
30889560-0	2019	A high-performance hydrogen sensor based on a reverse-biased MoS2/GaN heterojunction.	Hydrogen	19-27	gigaxonin	Homo sapiens	66-69
31454935-1	2019	Gallium nitride (GaN) is a superior candidate material for fabricating ultraviolet (UV) photodetectors (PDs) by taking advantage of its attractive wide bandgap (3.4 eV) and stable chemical and physical properties.	gallium nitride	0-15	gigaxonin	Homo sapiens	17-20
31454935-1	2019	Gallium nitride (GaN) is a superior candidate material for fabricating ultraviolet (UV) photodetectors (PDs) by taking advantage of its attractive wide bandgap (3.4 eV) and stable chemical and physical properties.	3-{1-[3-(Dimethylamino)propyl]-2-Methyl-1h-Indol-3-Yl}-4-(2-Methyl-1h-Indol-3-Yl)-1h-Pyrrole-2,5-Dione	104-107	gigaxonin	Homo sapiens	17-20
31454935-3	2019	Fabricating nanoporous GaN (porous-GaN) structures and constructing organic/inorganic hybrids are two effective ways to improve the performance of PDs.	3-{1-[3-(Dimethylamino)propyl]-2-Methyl-1h-Indol-3-Yl}-4-(2-Methyl-1h-Indol-3-Yl)-1h-Pyrrole-2,5-Dione	147-150	gigaxonin	Homo sapiens	23-26
31454935-3	2019	Fabricating nanoporous GaN (porous-GaN) structures and constructing organic/inorganic hybrids are two effective ways to improve the performance of PDs.	3-{1-[3-(Dimethylamino)propyl]-2-Methyl-1h-Indol-3-Yl}-4-(2-Methyl-1h-Indol-3-Yl)-1h-Pyrrole-2,5-Dione	147-150	gigaxonin	Homo sapiens	35-38
31416124-0	2019	Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes.	Indium	0-6	gigaxonin	Homo sapiens	28-31
30889560-6	2019	The sensing mechanism was demonstrated based on an energy band diagram at the MoS2/GaN interface in the presence and absence of hydrogen exposure.	Hydrogen	128-136	gigaxonin	Homo sapiens	83-86
30889560-1	2019	We report a MoS2/GaN heterojunction-based gas sensor by depositing MoS2 over a GaN substrate via a highly controllable and scalable sputtering technique coupled with a post sulfurization process in a sulfur-rich environment.	Sulfur	173-179	gigaxonin	Homo sapiens	17-20
30704131-0	2019	Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor.	Graphite	51-59	gigaxonin	Homo sapiens	32-35
31241343-0	2019	Role of Ga Surface Diffusion in the Elongation Mechanism and Optical Properties of Catalyst-Free GaN Nanowires Grown by Molecular Beam Epitaxy.	Gallium	8-10	gigaxonin	Homo sapiens	97-100
31241343-1	2019	We have shown that both the morphology and elongation mechanism of GaN nanowires homoepitaxially grown by plasma-assisted molecular beam epitaxy (PA-MBE) on a [0001]-oriented GaN nanowire template are strongly affected by the nominal gallium/nitrogen flux ratio as well as by additional Ga flux diffusing from the side walls.	Gallium	234-241	gigaxonin	Homo sapiens	67-70
31241343-1	2019	We have shown that both the morphology and elongation mechanism of GaN nanowires homoepitaxially grown by plasma-assisted molecular beam epitaxy (PA-MBE) on a [0001]-oriented GaN nanowire template are strongly affected by the nominal gallium/nitrogen flux ratio as well as by additional Ga flux diffusing from the side walls.	Nitrogen	242-250	gigaxonin	Homo sapiens	67-70
31241343-1	2019	We have shown that both the morphology and elongation mechanism of GaN nanowires homoepitaxially grown by plasma-assisted molecular beam epitaxy (PA-MBE) on a [0001]-oriented GaN nanowire template are strongly affected by the nominal gallium/nitrogen flux ratio as well as by additional Ga flux diffusing from the side walls.	Gallium	67-69	gigaxonin	Homo sapiens	175-178
30795591-7	2019	It is found that hybrid materials-based sensors exhibit the highest average ratio for NO2 gas sensing, whereas GaN and metal-oxide based sensors possess the highest ratio for SO2 and H2S gas sensing, respectively.	Sulfur Dioxide	175-178	gigaxonin	Homo sapiens	111-114
30795591-7	2019	It is found that hybrid materials-based sensors exhibit the highest average ratio for NO2 gas sensing, whereas GaN and metal-oxide based sensors possess the highest ratio for SO2 and H2S gas sensing, respectively.	Hydrogen Sulfide	183-186	gigaxonin	Homo sapiens	111-114
30783150-3	2019	Variation of the indium content in the composite films leads to a dramatic shift in the optical absorbance properties, which correlates with the band edges shifting between those of GaN to InN.	Indium	17-23	gigaxonin	Homo sapiens	182-185
30681980-0	2019	Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3.	Titanium	76-78	gigaxonin	Homo sapiens	59-62
30681980-0	2019	Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3.	Aluminum Oxide	79-84	gigaxonin	Homo sapiens	59-62
30681980-1	2019	We investigate the occurrence of interfacial reactions during the self-assembled formation of GaN nanowires on Ti/Al2O3(0001) substrates in plasma-assisted molecular beam epitaxy.	Titanium	111-113	gigaxonin	Homo sapiens	94-97
30681980-1	2019	We investigate the occurrence of interfacial reactions during the self-assembled formation of GaN nanowires on Ti/Al2O3(0001) substrates in plasma-assisted molecular beam epitaxy.	Aluminum Oxide	114-119	gigaxonin	Homo sapiens	94-97
30469211-0	2019	Performance Enhancement of GaN-Based Light-Emitting Diodes with Magnesium Nitride Inter-Layers.	magnesium nitride	64-81	gigaxonin	Homo sapiens	27-30
30469211-1	2019	High quality GaN epilayers were obtained by using a magnesium nitride (MgxNy) inter-layer.	magnesium nitride	52-69	gigaxonin	Homo sapiens	13-16
30469211-1	2019	High quality GaN epilayers were obtained by using a magnesium nitride (MgxNy) inter-layer.	mgxny	71-76	gigaxonin	Homo sapiens	13-16
30704131-2	2019	However, since the driving circuits are typically composed of Si devices, numerous micro-LED pixels must be transferred from their GaN substrate to bond with the Si field-effect transistors (FETs).	Silicon	162-164	gigaxonin	Homo sapiens	131-134
30339427-0	2018	Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN.	Carbon	30-36	gigaxonin	Homo sapiens	79-82
30583084-1	2019	The question of whether the broad 71,69Ga nuclear magnetic resonance (NMR) signal of hexagonal gallium nitride (h-GaN) at 530-330 ppm is related to the Knight shift (caused by the presence of carriers in semiconductors) is the subject of intense debate.	gallium nitride	95-110	gigaxonin	Homo sapiens	114-117
30544659-0	2018	Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN.	Silicon	8-10	gigaxonin	Homo sapiens	92-95
30544659-0	2018	Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN.	Silicon	83-85	gigaxonin	Homo sapiens	92-95
30339427-1	2018	Carbon (C) doping is essential for producing semi-insulating GaN for power electronics.	Carbon	0-6	gigaxonin	Homo sapiens	61-64
29954569-4	2018	Through the analysis of this work, we found the increasing properties of Quantum Transition Line Shapes (QTLSs) and the Quantum Transition Line Widths (QTLWs) of CdS and GaN with the temperature we also found that QTLW, gamma(T) of ZnS &lt; gamma(T) of GaN in gamma = 394 mum.	Cadmium	162-165	gigaxonin	Homo sapiens	253-256
29974253-0	2018	Electronic properties of FeCl3 and CrO3 interacting with GaN nanotubes from density functional calculations.	ferric chloride	25-30	gigaxonin	Homo sapiens	57-60
30097798-0	2018	Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN.	Aluminum	88-91	gigaxonin	Homo sapiens	103-106
30097798-1	2018	The interfacial and electrical properties of atomic layer deposited AlN on n-GaN with different AlN thicknesses were investigated.	Aluminum	68-71	gigaxonin	Homo sapiens	77-80
30097798-4	2018	The amount of remained oxygen atoms near the GaN surface was found to decrease for the thicker AlN.	Oxygen	23-29	gigaxonin	Homo sapiens	45-48
30097798-4	2018	The amount of remained oxygen atoms near the GaN surface was found to decrease for the thicker AlN.	Aluminum	95-98	gigaxonin	Homo sapiens	45-48
29947335-5	2018	In heavily doped GaN/AlGaN nanowires, a broad absorption band is observed in the 4.5-6.4 mum spectral region.	aluminum gallium nitride	21-26	gigaxonin	Homo sapiens	17-20
30213977-5	2018	A novel phenomenon of scattered-point contact is revealed at the Cu nanowires/GaN interface.	Copper	65-67	gigaxonin	Homo sapiens	78-81
29974253-0	2018	Electronic properties of FeCl3 and CrO3 interacting with GaN nanotubes from density functional calculations.	chromium trioxide	35-39	gigaxonin	Homo sapiens	57-60
29662131-4	2018	The optical properties of the GaN1-xPx alloys indicate their strong potential for implementation in various III-nitride-based photonic waveguide applications and Distributed Bragg Reflectors (DBR).	nitride	112-119	gigaxonin	Homo sapiens	30-34
29873654-1	2018	We report on the effect of nitridation on GaN self-assembled nanorods grown on the c-plane sapphire by metalorganic chemical vapour deposition (MOCVD).	nitridation	27-38	gigaxonin	Homo sapiens	42-45
29706066-0	2018	Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment.	Water	111-116	gigaxonin	Homo sapiens	40-43
29706066-2	2018	In this work, the structural, electronic, and optical properties of the 2D/3D heterostructure of monolayer MoS2 on wurtzite GaN surface without and with nitridation interfacial layer are systematically investigated by first-principles calculation and experimental analysis.	wurtzite	115-123	gigaxonin	Homo sapiens	124-127
29634249-3	2018	In this work, we take advantage of energy band engineering to synthesize (GaN)1- x(ZnO) x solid solution nanowires with ZnO contents ranging from 10.3% to 47.6% and corresponding band gap tailoring from 3.08 to 2.77 eV on the basis of the Au-assisted VLS mechanism.	Zinc Oxide	83-86	gigaxonin	Homo sapiens	74-79
29634249-3	2018	In this work, we take advantage of energy band engineering to synthesize (GaN)1- x(ZnO) x solid solution nanowires with ZnO contents ranging from 10.3% to 47.6% and corresponding band gap tailoring from 3.08 to 2.77 eV on the basis of the Au-assisted VLS mechanism.	Gold	239-241	gigaxonin	Homo sapiens	74-79
29634249-5	2018	As a result, a photocurrent approximately 10 times larger than that for a conventional powder-based photoanode is obtained, which indicates the potential of (GaN)1- x(ZnO) x nanowires in the preparation of superior photoanodes for enhanced water splitting.	photoanode	100-110	gigaxonin	Homo sapiens	158-163
29634249-5	2018	As a result, a photocurrent approximately 10 times larger than that for a conventional powder-based photoanode is obtained, which indicates the potential of (GaN)1- x(ZnO) x nanowires in the preparation of superior photoanodes for enhanced water splitting.	photoanodes	215-226	gigaxonin	Homo sapiens	158-163
29634249-5	2018	As a result, a photocurrent approximately 10 times larger than that for a conventional powder-based photoanode is obtained, which indicates the potential of (GaN)1- x(ZnO) x nanowires in the preparation of superior photoanodes for enhanced water splitting.	Water	240-245	gigaxonin	Homo sapiens	158-163
29634249-6	2018	It is anticipated that the water-splitting capability of (GaN)1- x(ZnO) x nanowire can be further increased through alignment control for enhanced visible light absorption and reduction of charge transfer resistance.	Water	27-32	gigaxonin	Homo sapiens	58-63
29745232-0	2018	Self-Assembled UV Photodetector Made by Direct Epitaxial GaN Growth on Graphene.	Graphite	71-79	gigaxonin	Homo sapiens	57-60
29745232-3	2018	In this work, we study the direct epitaxy of self-organized GaN crystals on graphene.	Graphite	76-84	gigaxonin	Homo sapiens	60-63
29745232-5	2018	Graphene can therefore be used both as an efficient sensitive material and as a substrate for GaN epitaxy to make a self-assembled UV photodetector.	Graphite	0-8	gigaxonin	Homo sapiens	94-97
29856393-0	2018	Light-extraction enhancement of GaN-based 395  nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode.	doped	91-96	gigaxonin	Homo sapiens	32-35
29856393-1	2018	The distinct ultraviolet (UV) light absorption of indium tin oxide (ITO) limits the performance of GaN-based near-UV light-emitting diodes (LEDs).	indium tin oxide	50-66	gigaxonin	Homo sapiens	99-102
29856393-1	2018	The distinct ultraviolet (UV) light absorption of indium tin oxide (ITO) limits the performance of GaN-based near-UV light-emitting diodes (LEDs).	indium tin oxide	68-71	gigaxonin	Homo sapiens	99-102
29777185-3	2018	The size of capture cross section, non-linear relation of trap densities from the depth profile, filling pulse width, and PL measurements indicated that the electronic deep trap levels in a-plane GaN on r-plane sapphire by HVPE originated from non-interacting point defects such as NGa, complex defects involving Si, O, or C, and VGa-related centres.	neohesperidin dihydrochalcone	282-285	gigaxonin	Homo sapiens	196-199
29515140-1	2018	On an SiO2-patterned c-plane sapphire substrate, GaN domains were grown with their polarity controlled in accordance with the pattern.	Silicon Dioxide	6-10	gigaxonin	Homo sapiens	49-52
29642435-0	2018	Effects of N2 Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy.	Nitrogen	11-13	gigaxonin	Homo sapiens	79-82
29642435-1	2018	GaN nanorods, essentially free from crystal defects and exhibiting very sharp band-edge luminescence, have been grown by reactive direct-current magnetron sputter epitaxy onto Si (111) substrates at a low working pressure of 5 mTorr.	magnetron	145-154	gigaxonin	Homo sapiens	0-3
29642435-1	2018	GaN nanorods, essentially free from crystal defects and exhibiting very sharp band-edge luminescence, have been grown by reactive direct-current magnetron sputter epitaxy onto Si (111) substrates at a low working pressure of 5 mTorr.	Silicon	176-178	gigaxonin	Homo sapiens	0-3
29642435-4	2018	Yet, lower N2 partial pressures eventually led to the growth of continuous GaN films.	Nitrogen	11-13	gigaxonin	Homo sapiens	75-78
29545591-1	2018	We report the existence of latent order during core relaxation in the high-angle grain boundaries (GBs) of GaN films using atomic-resolution scanning transmission electron microscopy and ab initio density functional theory calculations.	gbs	99-102	gigaxonin	Homo sapiens	107-110
29603996-0	2018	GaN microring waveguide resonators bonded to silicon substrate by a two-step polymer process.	Silicon	45-52	gigaxonin	Homo sapiens	0-3
29603996-0	2018	GaN microring waveguide resonators bonded to silicon substrate by a two-step polymer process.	Polymers	77-84	gigaxonin	Homo sapiens	0-3
29603996-1	2018	Using a polymer bonding technique, GaN microring waveguide resonators were fabricated on a Si substrate for future hybrid integration of GaN and Si photonic devices.	Polymers	8-15	gigaxonin	Homo sapiens	35-38
29603996-1	2018	Using a polymer bonding technique, GaN microring waveguide resonators were fabricated on a Si substrate for future hybrid integration of GaN and Si photonic devices.	Polymers	8-15	gigaxonin	Homo sapiens	137-140
29603996-1	2018	Using a polymer bonding technique, GaN microring waveguide resonators were fabricated on a Si substrate for future hybrid integration of GaN and Si photonic devices.	Silicon	91-93	gigaxonin	Homo sapiens	35-38
29603996-1	2018	Using a polymer bonding technique, GaN microring waveguide resonators were fabricated on a Si substrate for future hybrid integration of GaN and Si photonic devices.	Silicon	145-147	gigaxonin	Homo sapiens	35-38
29603996-3	2018	A GaN crystalline layer of 1000 nm in thickness was grown on a Si(111) substrate by metal organic chemical vapor deposition using a buffer layer of 300 nm in thickness for the compensation of lattice constant mismatch between GaN and Si crystals.	Silicon	63-65	gigaxonin	Homo sapiens	2-5
29603996-3	2018	A GaN crystalline layer of 1000 nm in thickness was grown on a Si(111) substrate by metal organic chemical vapor deposition using a buffer layer of 300 nm in thickness for the compensation of lattice constant mismatch between GaN and Si crystals.	Metals	84-89	gigaxonin	Homo sapiens	2-5
29603996-3	2018	A GaN crystalline layer of 1000 nm in thickness was grown on a Si(111) substrate by metal organic chemical vapor deposition using a buffer layer of 300 nm in thickness for the compensation of lattice constant mismatch between GaN and Si crystals.	Silicon	234-236	gigaxonin	Homo sapiens	2-5
29603996-4	2018	The GaN/Si wafer was bonded to a Si(100) wafer by a two-step polymer process to prevent it from trapping air bubbles.	Silicon	8-10	gigaxonin	Homo sapiens	4-7
29603996-4	2018	The GaN/Si wafer was bonded to a Si(100) wafer by a two-step polymer process to prevent it from trapping air bubbles.	Silicon	33-35	gigaxonin	Homo sapiens	4-7
29603996-4	2018	The GaN/Si wafer was bonded to a Si(100) wafer by a two-step polymer process to prevent it from trapping air bubbles.	Polymers	61-68	gigaxonin	Homo sapiens	4-7
29515140-3	2018	After etching of N-polar GaN on the circular openings by H3PO4, this template was coated with 40-nm Si by sputtering and was slightly etched by KOH.	phosphoric acid	57-62	gigaxonin	Homo sapiens	25-28
29515140-7	2018	This approach may help fabricating an unholed and merged GaN film physically attached to but epitaxially separated from the SiO2-patterned sapphire.	Silicon Dioxide	124-128	gigaxonin	Homo sapiens	57-60
29256446-10	2018	Finally, similarities and differences between nitride and oxide polar superlattices are pointed out by comparison of wurtzite GaN/AlN and ZnO/MgO.	nitride	46-53	gigaxonin	Homo sapiens	126-129
29475346-3	2018	The realization of electrically pumped III-nitride microdisk laser grown on Si has been impeded by the conventional undercut structure, poor material quality, and a limited quality of GaN microdisk formed by dry etching.	iii-nitride	39-50	gigaxonin	Homo sapiens	184-187
29350908-0	2018	Light Modulation and Water Splitting Enhancement Using a Composite Porous GaN Structure.	Water	21-26	gigaxonin	Homo sapiens	74-77
29350908-2	2018	Compared to the plane GaN, the composite porous GaN structure with the combination of the vertical holes can help to reduce UV reflectance and increase the saturation photocurrent during water splitting by a factor of ~4.5.	Water	187-192	gigaxonin	Homo sapiens	48-51
29256446-10	2018	Finally, similarities and differences between nitride and oxide polar superlattices are pointed out by comparison of wurtzite GaN/AlN and ZnO/MgO.	Oxides	58-63	gigaxonin	Homo sapiens	126-129
29361232-0	2018	Flaw-Containing Alumina Hollow Nanostructures Have Ultrahigh Fracture Strength To Be Incorporated into High-Efficiency GaN Light-Emitting Diodes.	Aluminum Oxide	16-23	gigaxonin	Homo sapiens	119-122
29515883-1	2018	Metal-organic chemical vapour deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes.	Metals	0-5	gigaxonin	Homo sapiens	84-87
29361232-5	2018	To that end, we demonstrated how our ultrastrong alpha-alumina hollow nanoshell structures could be successfully incorporated into GaN LEDs, thereby greatly improving the luminous efficiency and output power of the LEDs by 2.2 times higher than that of conventional GaN LEDs.	alpha-alumina	49-62	gigaxonin	Homo sapiens	131-134
29361232-5	2018	To that end, we demonstrated how our ultrastrong alpha-alumina hollow nanoshell structures could be successfully incorporated into GaN LEDs, thereby greatly improving the luminous efficiency and output power of the LEDs by 2.2 times higher than that of conventional GaN LEDs.	alpha-alumina	49-62	gigaxonin	Homo sapiens	266-269
29109806-3	2017	As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along [11[Formula: see text]0].	Nitrogen	7-8	gigaxonin	Homo sapiens	60-63
33101720-0	2018	Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates.	Silicon	79-81	gigaxonin	Homo sapiens	57-60
33101720-6	2018	The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.	nitride	38-45	gigaxonin	Homo sapiens	27-30
33101720-6	2018	The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.	Silicon	55-57	gigaxonin	Homo sapiens	27-30
29229949-1	2017	We present a Density Functional Theory (DFT) analysis of the optical properties of dilute-As GaN1-xAsx alloys with arsenic (As) content ranging from 0% up to 12.5%.	Arsenic	90-92	gigaxonin	Homo sapiens	93-97
29453376-2	2018	The twice-etched MOCVD-GaN/Al2O3 (TEMGA) templates were utilized to grow GaN crystals by hydride vapor phase epitaxy (HVPE) method.	Aluminum Oxide	27-32	gigaxonin	Homo sapiens	73-76
29064371-1	2017	We studied the emission of bare and aluminum quinoline (Alq3)/gold coated wurtzite GaN nanorods by temperature- and intensity-dependent time-integrated and time-resolved photoluminescence (PL).	wurtzite	74-82	gigaxonin	Homo sapiens	83-86
29118412-0	2017	Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates.	Silicon	128-130	gigaxonin	Homo sapiens	99-102
29118412-1	2017	Die-to-wafer heterogeneous integration of single-crystalline GaN film with CMOS compatible Si(100) substrate using the ion-cutting technique has been demonstrated.	Silicon	91-93	gigaxonin	Homo sapiens	61-64
29109806-3	2017	As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along [11[Formula: see text]0].	Gallium	9-11	gigaxonin	Homo sapiens	60-63
29109806-3	2017	As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along [11[Formula: see text]0].	Gallium	47-49	gigaxonin	Homo sapiens	60-63
29109806-4	2017	According to high-resolution X-ray diffraction analysis, Li5GaO4 was observed on the interface between GaN and LiAlO2 substrate.	li5gao4	57-64	gigaxonin	Homo sapiens	103-106
28993638-2	2017	It was found that the critical thickness of the m-plane GaN films grown on ZnO lies between 25 and 62 nm, whereas 180-nm-thick m-plane In0.12Ga0.88N can be coherently grown on ZnO substrates, which is explained well by theoretical calculations based on an energy-balance model.	Zinc Oxide	75-78	gigaxonin	Homo sapiens	56-59
28993638-3	2017	The coherently grown m-plane InGaN on ZnO exhibited narrow X-ray rocking curves compared with the m-plane GaN grown on ZnO.	Zinc Oxide	38-41	gigaxonin	Homo sapiens	31-34
28957153-0	2017	Effects of the ZnO layer on the structure and white light emission properties of a ZnS:Mn/GaN nanocomposite system.	Zinc Oxide	15-18	gigaxonin	Homo sapiens	90-93
28901127-3	2017	TBReff values are correlated with transmission electron microscopy analysis, showing that the lowest reported TBReff (~6.5 m2 K/GW) is obtained by using ultrathin SiN barrier layers with a smooth interface formed, whereas the direct growth of diamond onto GaN results in one to two orders of magnitude higher TBReff due to the formation of a rough interface.	tbreff	110-116	gigaxonin	Homo sapiens	256-259
28957153-8	2017	The PL spectrum of ZnS:Mn/ZnO/GaN covers the visible region from the blue light to the red light (400-700 nm), and its color coordinate and color temperature are (0.3103,0.3063) and 6869 K, respectively, presenting strong white light emission.	Zinc	19-22	gigaxonin	Homo sapiens	30-33
28833605-0	2017	Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.	Silicon	0-2	gigaxonin	Homo sapiens	17-20
28833605-0	2017	Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.	Silicon	0-2	gigaxonin	Homo sapiens	83-86
28833605-0	2017	Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.	Silicon	90-92	gigaxonin	Homo sapiens	17-20
28833605-0	2017	Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.	Silicon	90-92	gigaxonin	Homo sapiens	83-86
28833605-4	2017	The growth of thick (19 microm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 x 107 cm-2 achieved to date in GaN-on-Si is demonstrated.	Cocaine	33-38	gigaxonin	Homo sapiens	155-158
28833605-4	2017	The growth of thick (19 microm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 x 107 cm-2 achieved to date in GaN-on-Si is demonstrated.	Silicon	68-70	gigaxonin	Homo sapiens	54-57
28833605-4	2017	The growth of thick (19 microm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 x 107 cm-2 achieved to date in GaN-on-Si is demonstrated.	Silicon	68-70	gigaxonin	Homo sapiens	155-158
28833605-5	2017	With these advances, the first vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost-effective high power device paradigm on an Si CMOS platform are demonstrated.	Silicon	102-104	gigaxonin	Homo sapiens	40-43
28957153-8	2017	The PL spectrum of ZnS:Mn/ZnO/GaN covers the visible region from the blue light to the red light (400-700 nm), and its color coordinate and color temperature are (0.3103,0.3063) and 6869 K, respectively, presenting strong white light emission.	Zinc Oxide	26-29	gigaxonin	Homo sapiens	30-33
28957153-1	2017	ZnO films were inserted between the ZnS:Mn films and GaN substrates by pulsed laser deposition (PLD).	Zinc Oxide	0-3	gigaxonin	Homo sapiens	53-56
28957153-4	2017	Due to the insertion of ZnO films, the diffraction peak intensity of ZnS:Mn in ZnS:Mn/ZnO/GaN is stronger than that of ZnS:Mn in ZnS:Mn/GaN, and the full width at half-maximum is smaller.	Zinc Oxide	24-27	gigaxonin	Homo sapiens	90-93
28957153-4	2017	Due to the insertion of ZnO films, the diffraction peak intensity of ZnS:Mn in ZnS:Mn/ZnO/GaN is stronger than that of ZnS:Mn in ZnS:Mn/GaN, and the full width at half-maximum is smaller.	Zinc Oxide	24-27	gigaxonin	Homo sapiens	136-139
28957153-4	2017	Due to the insertion of ZnO films, the diffraction peak intensity of ZnS:Mn in ZnS:Mn/ZnO/GaN is stronger than that of ZnS:Mn in ZnS:Mn/GaN, and the full width at half-maximum is smaller.	Zinc	69-72	gigaxonin	Homo sapiens	90-93
28957153-4	2017	Due to the insertion of ZnO films, the diffraction peak intensity of ZnS:Mn in ZnS:Mn/ZnO/GaN is stronger than that of ZnS:Mn in ZnS:Mn/GaN, and the full width at half-maximum is smaller.	Zinc	69-72	gigaxonin	Homo sapiens	136-139
28957153-4	2017	Due to the insertion of ZnO films, the diffraction peak intensity of ZnS:Mn in ZnS:Mn/ZnO/GaN is stronger than that of ZnS:Mn in ZnS:Mn/GaN, and the full width at half-maximum is smaller.	Zinc Oxide	86-89	gigaxonin	Homo sapiens	90-93
28957153-4	2017	Due to the insertion of ZnO films, the diffraction peak intensity of ZnS:Mn in ZnS:Mn/ZnO/GaN is stronger than that of ZnS:Mn in ZnS:Mn/GaN, and the full width at half-maximum is smaller.	Zinc	79-82	gigaxonin	Homo sapiens	90-93
28604369-2	2017	The aim of this work is the selective area growth of AlN nanocolumns by plasma assisted molecular beam epitaxy on polar (0001) and semi-polar (11-22) GaN/sapphire templates.	Aluminum	53-56	gigaxonin	Homo sapiens	150-153
28447450-0	2017	Band-Bending of Ga-Polar GaN Interfaced with Al2O3 through Ultraviolet/Ozone Treatment.	Gallium	16-18	gigaxonin	Homo sapiens	25-28
28647510-0	2017	Hepatoprotective effect of Gan Kang Yuan against chronic liver injury induced by alcohol.	Alcohols	81-88	gigaxonin	Homo sapiens	27-30
28724899-2	2017	Recently, manganese was doped into GaN for absorption of visible light, and the conversion efficiency of GaN-based solar cells has been greatly improved.	Manganese	10-19	gigaxonin	Homo sapiens	35-38
28724899-2	2017	Recently, manganese was doped into GaN for absorption of visible light, and the conversion efficiency of GaN-based solar cells has been greatly improved.	Manganese	10-19	gigaxonin	Homo sapiens	105-108
28957223-1	2017	We report the observation of room-temperature optically pumped lasing modes from a single GaN pyramid microcavity on a metallic mirror.	lasing	63-69	gigaxonin	Homo sapiens	90-93
28447450-0	2017	Band-Bending of Ga-Polar GaN Interfaced with Al2O3 through Ultraviolet/Ozone Treatment.	Aluminum Oxide	45-50	gigaxonin	Homo sapiens	25-28
28447450-2	2017	The effects of ultraviolet/ozone (UV/O3) treatment of the GaN surface on the energy band bending of atomic-layer-deposition (ALD) Al2O3 coated Ga-polar GaN were studied.	Aluminum Oxide	130-135	gigaxonin	Homo sapiens	58-61
28447450-2	2017	The effects of ultraviolet/ozone (UV/O3) treatment of the GaN surface on the energy band bending of atomic-layer-deposition (ALD) Al2O3 coated Ga-polar GaN were studied.	Aluminum Oxide	130-135	gigaxonin	Homo sapiens	152-155
28447450-3	2017	The UV/O3 treatment and post-ALD anneal can be used to effectively vary the band bending, the valence band offset, conduction band offset, and the interface dipole at the Al2O3/GaN interfaces.	Aluminum Oxide	171-176	gigaxonin	Homo sapiens	177-180
28447450-5	2017	The positively charged surface states formed by the UV/O3 treatment-induced surface factors externally screen the effect of polarization charges in the GaN, in effect, determining the eventual energy band bending at the Al2O3/GaN interfaces.	Aluminum Oxide	220-225	gigaxonin	Homo sapiens	152-155
28447450-5	2017	The positively charged surface states formed by the UV/O3 treatment-induced surface factors externally screen the effect of polarization charges in the GaN, in effect, determining the eventual energy band bending at the Al2O3/GaN interfaces.	Aluminum Oxide	220-225	gigaxonin	Homo sapiens	226-229
28303797-0	2017	Flexible resistive random access memory devices by using NiO x /GaN microdisk arrays fabricated on graphene films.	Graphite	99-107	gigaxonin	Homo sapiens	64-67
28303797-1	2017	We report flexible resistive random access memory (ReRAM) arrays fabricated by using NiO x /GaN microdisk arrays on graphene films.	Graphite	116-124	gigaxonin	Homo sapiens	92-95
28244739-6	2017	Moreover, the high doping level occurred simultaneously with the epitaxial growth of n-GaN micro- and nanorods on top of graphene, leading to the flow of higher currents through the graphene/n-GaN rod interface.	Graphite	121-129	gigaxonin	Homo sapiens	87-90
28430238-2	2017	The hydrogen-environment thermal etching performed well in undercutting the AlGaN microdisks owing to the selective etching for the GaN layer.	Hydrogen	4-12	gigaxonin	Homo sapiens	78-81
28244739-6	2017	Moreover, the high doping level occurred simultaneously with the epitaxial growth of n-GaN micro- and nanorods on top of graphene, leading to the flow of higher currents through the graphene/n-GaN rod interface.	Graphite	121-129	gigaxonin	Homo sapiens	193-196
27505731-5	2016	For ITO, thermally driven damage was related to free carrier absorption and, for GaN, carbon complexes were proposed as potential damage precursors or markers.	Carbon	86-92	gigaxonin	Homo sapiens	81-84
28290480-0	2017	Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa delta doping in (AlN)m/(GaN)n superlattice.	Magnesium	36-38	gigaxonin	Homo sapiens	78-81
28290480-0	2017	Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa delta doping in (AlN)m/(GaN)n superlattice.	Aluminum	65-67	gigaxonin	Homo sapiens	78-81
27974253-0	2017	V-shaped pits in HVPE-grown GaN associated with columnar inversion domains originating from foreign particles of alpha-Si3N4 and graphitic carbon.	Carbon	139-145	gigaxonin	Homo sapiens	28-31
28198432-0	2017	All-nitride AlxGa1-xN:Mn/GaN distributed Bragg reflectors for the near-infrared.	nitride	4-11	gigaxonin	Homo sapiens	25-28
27841984-1	2017	Despite the recent progress in red light-emitting diodes (LED) made of gallium nitride doped with europium (GaN:Eu) having sharp emission lines due to the 5D0     7F2 transition of Eu3+, unexpected subsidiary Eu emission centers radiate several satellite lines.	gallium nitride	71-86	gigaxonin	Homo sapiens	108-111
27781998-1	2016	In this paper, we report on a pressure sensor based on graphene aerogel functionalized with SnO2 or GaN thin films deposited by magnetron sputtering.	Graphite	55-63	gigaxonin	Homo sapiens	100-103
27505731-1	2016	Laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis.	Silicon	104-111	gigaxonin	Homo sapiens	118-121
27505731-4	2016	In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces.	Silicon	33-35	gigaxonin	Homo sapiens	36-39
28157866-1	2017	GaN&lt;sub&gt;1-x&lt;/sub&gt;Sb&lt;sub&gt;x&lt;/sub&gt; with x~5%-7% is a highly mismatched alloy predicted to have favorable properties for application as an electrode in a photoelectrochemical cell for solar water splitting.	Water	210-215	gigaxonin	Homo sapiens	0-3
28157866-3	2017	Prior experiments with the similar alloy GaN&lt;sub&gt;1-x&lt;/sub&gt;As&lt;sub&gt;x&lt;/sub&gt;, the tendency of Sb to surfact, and the low growth temperatures needed to incorporate Sb all suggested that GaN&lt;sub&gt;1-x&lt;/sub&gt;Sb&lt;sub&gt;x&lt;/sub&gt; alloys would likely exhibit phase segregation.	Antimony	114-116	gigaxonin	Homo sapiens	41-44
28157866-3	2017	Prior experiments with the similar alloy GaN&lt;sub&gt;1-x&lt;/sub&gt;As&lt;sub&gt;x&lt;/sub&gt;, the tendency of Sb to surfact, and the low growth temperatures needed to incorporate Sb all suggested that GaN&lt;sub&gt;1-x&lt;/sub&gt;Sb&lt;sub&gt;x&lt;/sub&gt; alloys would likely exhibit phase segregation.	Antimony	114-116	gigaxonin	Homo sapiens	205-208
30695424-13	2017	Compared with stagnation of Gan qi syndrome, the Hcy level in serum obviously decreased in reversed invasion of Gan qi syndrome (P &lt;0.05).	Homocysteine	49-52	gigaxonin	Homo sapiens	28-31
30695424-13	2017	Compared with stagnation of Gan qi syndrome, the Hcy level in serum obviously decreased in reversed invasion of Gan qi syndrome (P &lt;0.05).	Homocysteine	49-52	gigaxonin	Homo sapiens	112-115
27346527-0	2016	Flexible GaN Light-Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots.	Graphite	89-97	gigaxonin	Homo sapiens	9-12
27346527-0	2016	Flexible GaN Light-Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots.	Graphite	89-97	gigaxonin	Homo sapiens	41-44
27346527-1	2016	The epitaxial lateral overgrowth (ELOG) of GaN microdisks on graphene microdots and the fabrication of flexible light-emitting diodes (LEDs) using these microdisks is reported.	Graphite	61-69	gigaxonin	Homo sapiens	43-46
27459343-0	2016	Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices.	Oxides	0-5	gigaxonin	Homo sapiens	109-112
27459343-0	2016	Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices.	aloxny	51-57	gigaxonin	Homo sapiens	109-112
27459343-0	2016	Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices.	Aluminum Oxide	58-63	gigaxonin	Homo sapiens	109-112
27459343-1	2016	Nitrogen incorporation to produce negative fixed charge in Al2O3 gate insulator layers is investigated as a path to achieve enhancement mode GaN device operation.	Nitrogen	0-8	gigaxonin	Homo sapiens	141-144
27459343-1	2016	Nitrogen incorporation to produce negative fixed charge in Al2O3 gate insulator layers is investigated as a path to achieve enhancement mode GaN device operation.	Aluminum Oxide	59-64	gigaxonin	Homo sapiens	141-144
27459343-4	2016	Insertion of a 2 nm thick Al2O3 interlayer greatly decreases the trap density of the insulator/GaN interface, and reduces the voltage hysteresis and frequency dispersion of gate capacitance compared to single-layer AlOxNy gate insulators in GaN MOSCAPs.	Aluminum Oxide	26-31	gigaxonin	Homo sapiens	95-98
27459343-4	2016	Insertion of a 2 nm thick Al2O3 interlayer greatly decreases the trap density of the insulator/GaN interface, and reduces the voltage hysteresis and frequency dispersion of gate capacitance compared to single-layer AlOxNy gate insulators in GaN MOSCAPs.	Aluminum Oxide	26-31	gigaxonin	Homo sapiens	241-244
27505739-0	2016	Performance of GaN-on-Si-based vertical light-emitting diodes using silicon nitride electrodes with conducting filaments: correlation between filament density and device reliability.	Silicon	22-24	gigaxonin	Homo sapiens	15-18
27505739-0	2016	Performance of GaN-on-Si-based vertical light-emitting diodes using silicon nitride electrodes with conducting filaments: correlation between filament density and device reliability.	silicon nitride	68-83	gigaxonin	Homo sapiens	15-18
27347685-1	2016	Parallel aligned mesopore arrays in pyramidal-shaped GaN are fabricated by using an electrochemical anodic etching technique, followed by inductively coupled plasma etching assisted by SiO2 nanosphere lithography, and used as a promising photoelectrode for solar water oxidation.	Water	263-268	gigaxonin	Homo sapiens	53-56
27347685-3	2016	The dry etching of single-layer SiO2 nanosphere-coated GaN produces a pyramidal shape of the GaN, making the pores open at both sides and shortening the escape path of evolved gas bubbles produced inside pores during the water oxidation.	Silicon Dioxide	32-36	gigaxonin	Homo sapiens	55-58
27347685-3	2016	The dry etching of single-layer SiO2 nanosphere-coated GaN produces a pyramidal shape of the GaN, making the pores open at both sides and shortening the escape path of evolved gas bubbles produced inside pores during the water oxidation.	Silicon Dioxide	32-36	gigaxonin	Homo sapiens	93-96
27347685-3	2016	The dry etching of single-layer SiO2 nanosphere-coated GaN produces a pyramidal shape of the GaN, making the pores open at both sides and shortening the escape path of evolved gas bubbles produced inside pores during the water oxidation.	Water	221-226	gigaxonin	Homo sapiens	55-58
27347685-3	2016	The dry etching of single-layer SiO2 nanosphere-coated GaN produces a pyramidal shape of the GaN, making the pores open at both sides and shortening the escape path of evolved gas bubbles produced inside pores during the water oxidation.	Water	221-226	gigaxonin	Homo sapiens	93-96
27346494-1	2016	GaN is a pivotal material for acoustic transducers and acoustic spectroscopy in the THz regime, but its THz phonon properties have not been experimentally and comprehensively studied.	thz	84-87	gigaxonin	Homo sapiens	0-3
27346494-1	2016	GaN is a pivotal material for acoustic transducers and acoustic spectroscopy in the THz regime, but its THz phonon properties have not been experimentally and comprehensively studied.	thz phonon	104-114	gigaxonin	Homo sapiens	0-3
27137064-0	2016	Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact.	iii-nitride	19-30	gigaxonin	Homo sapiens	69-72
26902654-1	2016	This paper assesses the effects of Si doping on the properties of nonpolar m-plane GaN/AlGaN quantum wells (QWs) designed for intersubband (ISB) absorption in the far-infrared spectral range.	Silicon	35-37	gigaxonin	Homo sapiens	83-86
26861041-1	2016	Gallium nitride, GaN, is a semiconductor material with several technological applications.	gallium nitride	0-15	gigaxonin	Homo sapiens	17-20
27137064-1	2016	We demonstrate a III-nitride edge emitting laser diode (EELD) grown on a (2021) bulk GaN substrate with a GaN tunnel junction contact for hole injection.	iii-nitride	17-28	gigaxonin	Homo sapiens	85-88
27137064-1	2016	We demonstrate a III-nitride edge emitting laser diode (EELD) grown on a (2021) bulk GaN substrate with a GaN tunnel junction contact for hole injection.	iii-nitride	17-28	gigaxonin	Homo sapiens	106-109
27137064-2	2016	The tunnel junction was grown using a combination of metal-organic chemical-vapor deposition (MOCVD) and ammonia-based molecular-beam epitaxy (MBE) which allowed to be regrown over activated p-GaN.	Ammonia	105-112	gigaxonin	Homo sapiens	193-196
26928396-3	2016	In this paper, we determine the thermal conductivity of w-ZnO using first-principles lattice dynamics and compare it to that of wurtzite Gallium-Nitride (w-GaN)--another important wide bandgap semiconductor with the same crystal structure and similar atomic masses as w-ZnO.	wurtzite gallium-nitride	128-152	gigaxonin	Homo sapiens	156-159
26855295-0	2016	Cathodoluminescence study of Mg activation in non-polar and semi-polar faces of undoped/Mg-doped GaN core-shell nanorods.	Magnesium	29-31	gigaxonin	Homo sapiens	97-100
26928396-6	2016	Compared to w-GaN, w-ZnO has a smaller frequency gap in phonon dispersion, which is responsible for the stronger anharmonic phonon scattering, and the weaker interatomic bonds in w-ZnO leads to smaller phonon group velocities.	w-zno	19-24	gigaxonin	Homo sapiens	14-17
26861595-0	2016	Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.	Aluminum	111-114	gigaxonin	Homo sapiens	68-71
26759358-0	2016	Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns.	Titanium	0-8	gigaxonin	Homo sapiens	56-59
26861595-1	2016	We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth.	Aluminum	182-185	gigaxonin	Homo sapiens	82-85
26861595-1	2016	We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth.	Aluminum	231-234	gigaxonin	Homo sapiens	82-85
26861595-2	2016	By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and significantly reduce the density of stacking faults and dislocations.	Aluminum	22-25	gigaxonin	Homo sapiens	122-125
26861595-6	2016	The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting.	iii-nitride	81-92	gigaxonin	Homo sapiens	50-53
26698703-1	2015	The surface plasmon (SP) coupling behaviors of an embedded light emitter or radiating dipole in GaN with a surface Ag nanoparticle (NP) in four structures of different added dielectric geometries, including an extended dielectric interlayer (DI) and a DI of a finite width between the Ag NP and GaN, a dielectric coating on the Ag NP, and no dielectric addition, are numerically compared.	dipole	86-92	gigaxonin	Homo sapiens	96-99
26319330-0	2015	Pt-decorated GaN nanowires with significant improvement in H2 gas-sensing performance at room temperature.	Platinum	0-2	gigaxonin	Homo sapiens	13-16
26004038-0	2015	Spectroscopic XPEEM of highly conductive SI-doped GaN wires.	Silicon	41-43	gigaxonin	Homo sapiens	50-53
26815407-1	2016	(GaN)1-x(ZnO)x solid-solution nanostructures with superior crystallinity, large surface areas and visible light absorption have been regarded as promising photocatalysts for overall water splitting to produce H2.	Hydrogen	209-211	gigaxonin	Homo sapiens	1-4
26815407-2	2016	In this work, we report the preparation of (GaN)1-x(ZnO)x solid-solution nanorods with a high ZnO solubility up to 95% via a two-step synthetic route, which starts from a sol-gel reaction and follows with a nitridation process.	Zinc Oxide	52-55	gigaxonin	Homo sapiens	44-47
26815407-4	2016	Correspondingly, the ZnO content in the GaN lattice can be achieved in the range of ~25%-95%.	Zinc Oxide	21-24	gigaxonin	Homo sapiens	40-43
26815407-5	2016	Room-temperature cathodoluminescence (CL) measurements on the three types of (GaN)1-x(ZnO)x solid-solution nanorods indicate that the minimum band-gap of 2.46 eV of the solid-solution nanorods is achieved under a ZnO solubility of 25%.	Zinc Oxide	86-89	gigaxonin	Homo sapiens	78-81
26815407-6	2016	The efficiency and versatility of our strategy in the band-gap and facet engineering of (GaN)1-x(ZnO)x solid-solution nanorods will enhance their promising photocatalytic utilizations like an overall water splitting for H2 production under visible-light irradiation.	Hydrogen	220-222	gigaxonin	Homo sapiens	89-92
26606258-3	2016	The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone.	aluminum gallium nitride	31-36	gigaxonin	Homo sapiens	27-30
26606258-4	2016	However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same.	aluminum gallium nitride	54-59	gigaxonin	Homo sapiens	27-30
26606258-4	2016	However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same.	aluminum gallium nitride	54-59	gigaxonin	Homo sapiens	50-53
26319330-0	2015	Pt-decorated GaN nanowires with significant improvement in H2 gas-sensing performance at room temperature.	Hydrogen	59-61	gigaxonin	Homo sapiens	13-16
26319330-1	2015	Superior sensitivity towards H2 gas was successfully achieved with Pt-decorated GaN nanowires (NWs) gas sensor.	Hydrogen	29-31	gigaxonin	Homo sapiens	80-83
26319330-3	2015	Morphology (field emission scanning electron microscopy and transmission electron microscopy) and crystal structure (high resolution X-ray diffraction) characterizations of the as-synthesized nanostructures demonstrated the formation of GaN NWs having a wurtzite structure, zigzaged shape and an average diameter of 30-166nm.	wurtzite	254-262	gigaxonin	Homo sapiens	237-240
26319330-4	2015	The Pt-decorated GaN NWs sensor shows a high response of 250-2650% upon exposure to H2 gas concentration from 7 to 1000ppm respectively at room temperature (RT), and then increases to about 650-4100% when increasing the operating temperature up to 75 C. The gas-sensing measurements indicated that the Pt-decorated GaN NWs based sensor exhibited efficient detection of H2 at low concentration with excellent sensitivity, repeatability, and free hysteresis phenomena over a period of time of 100min.	Hydrogen	84-86	gigaxonin	Homo sapiens	17-20
26319330-4	2015	The Pt-decorated GaN NWs sensor shows a high response of 250-2650% upon exposure to H2 gas concentration from 7 to 1000ppm respectively at room temperature (RT), and then increases to about 650-4100% when increasing the operating temperature up to 75 C. The gas-sensing measurements indicated that the Pt-decorated GaN NWs based sensor exhibited efficient detection of H2 at low concentration with excellent sensitivity, repeatability, and free hysteresis phenomena over a period of time of 100min.	Hydrogen	369-371	gigaxonin	Homo sapiens	17-20
26319330-5	2015	The large surface-to-volume ratio of GaN NWs and the catalytic activity of Pt metal are the most influential factors leading to the enhancement of H2 gas-sensing performances through the improvement of the interaction between the target molecules (H2) and the sensing NWs surface.	Metals	78-83	gigaxonin	Homo sapiens	37-40
26319330-5	2015	The large surface-to-volume ratio of GaN NWs and the catalytic activity of Pt metal are the most influential factors leading to the enhancement of H2 gas-sensing performances through the improvement of the interaction between the target molecules (H2) and the sensing NWs surface.	Hydrogen	147-149	gigaxonin	Homo sapiens	37-40
26319330-5	2015	The large surface-to-volume ratio of GaN NWs and the catalytic activity of Pt metal are the most influential factors leading to the enhancement of H2 gas-sensing performances through the improvement of the interaction between the target molecules (H2) and the sensing NWs surface.	Hydrogen	248-250	gigaxonin	Homo sapiens	37-40
26319330-6	2015	The attractive low-cost, low power consumption and high-performance of the resultant decorated GaN NWs gas sensor assure their uppermost potential for H2 gas sensor working at low operating temperature.	Hydrogen	151-153	gigaxonin	Homo sapiens	95-98
26431166-1	2015	We report on AlxGa1-xN heterostructures resulting from the coherent growth of a positive then a negative gradient of the Al concentration on a [0001]-oriented GaN substrate.	Aluminum	13-15	gigaxonin	Homo sapiens	159-162
26563573-1	2015	2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique.	Aluminum	85-88	gigaxonin	Homo sapiens	16-19
26563573-5	2015	Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed.	Aluminum	90-93	gigaxonin	Homo sapiens	71-74
26563573-5	2015	Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed.	Silicon	94-96	gigaxonin	Homo sapiens	71-74
26046390-1	2015	We investigate nontrivial surface effects on the optical properties of self-assembled crystalline GaN nanotubes grown on Si substrates.	Silicon	121-123	gigaxonin	Homo sapiens	98-101
26234582-0	2015	Interplay of strain and indium incorporation in InGaN/GaN dot-in-a-wire nanostructures by scanning transmission electron microscopy.	Indium	24-30	gigaxonin	Homo sapiens	50-53
26234582-2	2015	The influence of the strain distribution on the incorporation of indium during the formation of multiple InGaN/GaN quantum dots (QDs) in nanowire (NW) heterostructures has been investigated, using the combined techniques of geometric phase analysis of atomic-resolution images and quantitative elemental mapping from core-loss electron energy-loss spectroscopy within scanning transmission electron microscopy.	Indium	65-71	gigaxonin	Homo sapiens	107-110
26340194-0	2015	Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN.	wurtzite	32-40	gigaxonin	Homo sapiens	66-69
26028318-0	2015	Ultraviolet photoconductive devices with an n-GaN nanorod-graphene hybrid structure synthesized by metal-organic chemical vapor deposition.	Graphite	58-66	gigaxonin	Homo sapiens	46-49
26373117-1	2015	This paper reports the etch rates and etched surface morphology of semipolar GaN using a potassium hydroxide (KOH) solution.	potassium hydroxide	89-108	gigaxonin	Homo sapiens	77-80
26373117-1	2015	This paper reports the etch rates and etched surface morphology of semipolar GaN using a potassium hydroxide (KOH) solution.	potassium hydroxide	110-113	gigaxonin	Homo sapiens	77-80
26373117-2	2015	Semipolar (11-22) GaN could be etched easily using a KOH solution and the etch rate was higher than that of Ga-polar c-plane GaN (0001).	potassium hydroxide	53-56	gigaxonin	Homo sapiens	18-21
26373117-3	2015	The etch rate was anisotropic and the highest etch rate was measured to be approximately 116 nm/min for the (1011) plane and 62 nm/min for the (11-20) plane GaN using a 4 M KOH solution at 100  C, resulting in specific surface features, such as inclined trigonal cells.	potassium hydroxide	173-176	gigaxonin	Homo sapiens	157-160
26373120-0	2015	Comparison of Strain in GaN-Based Blue Light-Emitting Diode Grown on Silicon(111) and Sapphire Substrates.	Silicon	69-76	gigaxonin	Homo sapiens	24-27
26373120-1	2015	We compare the strain states and device performances of GaN-based blue light-emitting diodes (LEDs) grown on Si(111) and sapphire substrates.	Silicon	109-111	gigaxonin	Homo sapiens	56-59
26373120-3	2015	These analyses reveal that GaN layer grown on Si has a residual tensile strain in contrast to a compressive strain for GaN on sapphire, and quantum wells (QWs) on GaN/Si experience reduced lattice mismatch than those of GaN/sapphire.	Silicon	46-48	gigaxonin	Homo sapiens	27-30
26373120-4	2015	When external quantum efficiencies of LED on sapphire and Si substrates are compared, the LED on Si shows better efficiency droop characteristics and this is attributed to a decrease in piezo-electric field strength in InGaN/GaN layers owing to reduced lattice mismatch.	Silicon	97-99	gigaxonin	Homo sapiens	221-224
26089133-1	2015	Utilizing the growth temperature controlled epitaxy, high quality GaN/In0.15Ga0.85N multiple quantum wells designed for intersubband transition (ISBT) as novel candidates in III-nitride infrared device applications have been experimentally realized for the first time.	isbt	145-149	gigaxonin	Homo sapiens	66-69
26089133-1	2015	Utilizing the growth temperature controlled epitaxy, high quality GaN/In0.15Ga0.85N multiple quantum wells designed for intersubband transition (ISBT) as novel candidates in III-nitride infrared device applications have been experimentally realized for the first time.	nitride	178-185	gigaxonin	Homo sapiens	66-69
26028318-0	2015	Ultraviolet photoconductive devices with an n-GaN nanorod-graphene hybrid structure synthesized by metal-organic chemical vapor deposition.	Metals	99-104	gigaxonin	Homo sapiens	46-49
26028318-1	2015	The superior photoconductive behavior of a simple, cost-effective n-GaN nanorod (NR)-graphene hybrid device structure is demonstrated for the first time.	Graphite	85-93	gigaxonin	Homo sapiens	68-71
26028318-3	2015	Defect-free n-GaN NRs were grown on a highly ordered graphene monolayer on Si without forming any metal-catalyst or droplet seeds.	Graphite	53-61	gigaxonin	Homo sapiens	14-17
26028318-3	2015	Defect-free n-GaN NRs were grown on a highly ordered graphene monolayer on Si without forming any metal-catalyst or droplet seeds.	Silicon	75-77	gigaxonin	Homo sapiens	14-17
25758029-0	2015	High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111).	Silicon	60-67	gigaxonin	Homo sapiens	11-14
25758029-2	2015	This work demonstrates that this limitation can be overcome by m-planar core-shell InGaN/GaN nanowire LEDs grown on Si(111).	Silicon	116-118	gigaxonin	Homo sapiens	85-88
26043560-1	2015	OBJECTIVE: To evaluate the efficacy and safety of tiaogan Lipi Recipe (TLR) in treating non-alcoholic fatty liver disease (NAFLD) patients of Gan stagnation Pi deficiency syndrome (GSP-DS).	tiaogan lipi	50-62	gigaxonin	Homo sapiens	142-145
25968799-1	2015	We demonstrate indium gallium nitride/gallium nitride/aluminum nitride (AlN/GaN/InGaN) multi-quantum-well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) to improve light output power.	indium gallium nitride	15-37	gigaxonin	Homo sapiens	76-79
25968799-1	2015	We demonstrate indium gallium nitride/gallium nitride/aluminum nitride (AlN/GaN/InGaN) multi-quantum-well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) to improve light output power.	aluminum nitride	54-70	gigaxonin	Homo sapiens	76-79
25693505-0	2015	Energetic, structural and electronic properties of metal vacancies in strained AlN/GaN interfaces.	Metals	51-56	gigaxonin	Homo sapiens	83-86
25693505-0	2015	Energetic, structural and electronic properties of metal vacancies in strained AlN/GaN interfaces.	Aluminum	79-82	gigaxonin	Homo sapiens	83-86
25665033-0	2015	Improving the quality of GaN crystals by using graphene or hexagonal boron nitride nanosheets substrate.	Graphite	47-55	gigaxonin	Homo sapiens	25-28
25744694-3	2015	In this paper, we demonstrate the growth of Aerographite-GaN 3D hybrid networks using ultralight and extremely porous carbon based Aerographite material as templates by a single step hydride vapor phase epitaxy process.	Carbon	118-124	gigaxonin	Homo sapiens	57-60
25654749-1	2015	InGaN/GaN disk-in-nanowire heterostructures on silicon substrates have emerged as important gain media for the realization of visible light sources.	Silicon	47-54	gigaxonin	Homo sapiens	2-5
25665033-0	2015	Improving the quality of GaN crystals by using graphene or hexagonal boron nitride nanosheets substrate.	boron nitride	69-82	gigaxonin	Homo sapiens	25-28
25665033-3	2015	Here, we report graphene or hexagonal boron nitride nanosheets can be used to improve the quality of GaN crystal using hydride vapor phase epitaxy methods.	Graphite	16-24	gigaxonin	Homo sapiens	101-104
25665033-3	2015	Here, we report graphene or hexagonal boron nitride nanosheets can be used to improve the quality of GaN crystal using hydride vapor phase epitaxy methods.	boron nitride	38-51	gigaxonin	Homo sapiens	101-104
25567005-0	2015	Luminescence signature of free exciton dissociation and liberated electron transfer across the junction of graphene/GaN hybrid structure.	Graphite	107-115	gigaxonin	Homo sapiens	116-119
25646451-3	2015	Furthermore, unlike graphene that needs to be functionalized for opening a band gap, penta-graphene possesses an intrinsic quasi-direct band gap as large as 3.25 eV, close to that of ZnO and GaN.	penta-graphene	85-99	gigaxonin	Homo sapiens	191-194
25567005-1	2015	Large-area graphene grown on Cu foil with chemical vapor deposition was transferred onto intentionally undoped GaN epilayer to form a graphene/GaN Schottky junction.	Graphite	11-19	gigaxonin	Homo sapiens	111-114
25567005-1	2015	Large-area graphene grown on Cu foil with chemical vapor deposition was transferred onto intentionally undoped GaN epilayer to form a graphene/GaN Schottky junction.	Graphite	11-19	gigaxonin	Homo sapiens	143-146
25567005-1	2015	Large-area graphene grown on Cu foil with chemical vapor deposition was transferred onto intentionally undoped GaN epilayer to form a graphene/GaN Schottky junction.	Graphite	134-142	gigaxonin	Homo sapiens	111-114
25567005-1	2015	Large-area graphene grown on Cu foil with chemical vapor deposition was transferred onto intentionally undoped GaN epilayer to form a graphene/GaN Schottky junction.	Graphite	134-142	gigaxonin	Homo sapiens	143-146
25479565-5	2014	Surface analysis confirmed degradation of the surface of GaN after radiation exposure in water; however, the peptide molecules successfully remained on the surface following exposure to ionizing radiation.	Water	89-94	gigaxonin	Homo sapiens	57-60
25412649-0	2014	Extraordinary N atom tunneling in formation of InN shell layer on GaN nanorod m-plane sidewall.	Nitrogen	14-15	gigaxonin	Homo sapiens	66-69
25336448-1	2014	The thermal catalytic activity of GaN in non-oxidative alkane dehydroaromatization has been discovered for the first time.	Alkanes	55-61	gigaxonin	Homo sapiens	34-37
25336448-3	2014	Commercially available GaN powders with a wurtzite crystal structure showed superior stability and reactivity for converting light alkanes, including methane, propane, n-butane, n-hexane and cyclohexane into benzene at an elevated temperature with high selectivity.	wurtzite	42-50	gigaxonin	Homo sapiens	23-26
25336448-3	2014	Commercially available GaN powders with a wurtzite crystal structure showed superior stability and reactivity for converting light alkanes, including methane, propane, n-butane, n-hexane and cyclohexane into benzene at an elevated temperature with high selectivity.	Alkanes	131-138	gigaxonin	Homo sapiens	23-26
25336448-3	2014	Commercially available GaN powders with a wurtzite crystal structure showed superior stability and reactivity for converting light alkanes, including methane, propane, n-butane, n-hexane and cyclohexane into benzene at an elevated temperature with high selectivity.	Methane	150-157	gigaxonin	Homo sapiens	23-26
25336448-3	2014	Commercially available GaN powders with a wurtzite crystal structure showed superior stability and reactivity for converting light alkanes, including methane, propane, n-butane, n-hexane and cyclohexane into benzene at an elevated temperature with high selectivity.	Propane	159-166	gigaxonin	Homo sapiens	23-26
25336448-3	2014	Commercially available GaN powders with a wurtzite crystal structure showed superior stability and reactivity for converting light alkanes, including methane, propane, n-butane, n-hexane and cyclohexane into benzene at an elevated temperature with high selectivity.	butane	168-176	gigaxonin	Homo sapiens	23-26
25336448-3	2014	Commercially available GaN powders with a wurtzite crystal structure showed superior stability and reactivity for converting light alkanes, including methane, propane, n-butane, n-hexane and cyclohexane into benzene at an elevated temperature with high selectivity.	n-hexane	178-186	gigaxonin	Homo sapiens	23-26
25336448-3	2014	Commercially available GaN powders with a wurtzite crystal structure showed superior stability and reactivity for converting light alkanes, including methane, propane, n-butane, n-hexane and cyclohexane into benzene at an elevated temperature with high selectivity.	Cyclohexane	191-202	gigaxonin	Homo sapiens	23-26
25336448-3	2014	Commercially available GaN powders with a wurtzite crystal structure showed superior stability and reactivity for converting light alkanes, including methane, propane, n-butane, n-hexane and cyclohexane into benzene at an elevated temperature with high selectivity.	Benzene	208-215	gigaxonin	Homo sapiens	23-26
25412649-2	2014	The [0001] orientated GaN nanorod array is grown on sapphire substrate patterned with Ga nanoparticle by metal-organic vapor deposition method, based on which the simulation structures of c-plane top surface and m-plane sidewall surface is constructed for the first-principles calculations.	Metals	105-110	gigaxonin	Homo sapiens	22-25
25327280-4	2014	The comparison of the results obtained for GaN nanowire ensembles prepared on bare Si(111) and AlN buffered 6H-SiC(0001) reveals that the main source of the inhomogeneous strain is the random distortions caused by the coalescence of adjacent nanowires.	Silicon	83-85	gigaxonin	Homo sapiens	43-46
25321523-2	2014	With the SiO2 nanoparticles placed between the GaN nanopillars, subsequent overgrowth of GaN layer started only on the exposed tips of the nanopillars and rapidly switched to the lateral growth mode.	Silicon Dioxide	9-13	gigaxonin	Homo sapiens	47-50
25302936-1	2014	The carrier-transport behavior at the interface of a contact and n-type GaN was investigated for group III nitride vertical light-emitting diodes (LEDs).	nitride	107-114	gigaxonin	Homo sapiens	72-75
25225912-3	2014	Here, we present a new approach to GaN/InGaN core-shell nanostructures at a wafer level formed by chemical vapor-phase etching and metal-organic chemical vapor deposition.	Metals	131-136	gigaxonin	Homo sapiens	35-38
25321523-1	2014	We demonstrated the InGaN/GaN-based light-emitting diodes (LEDs) with SiO2 nanoparticles embedded in nanopillar GaN template.	Silicon Dioxide	70-74	gigaxonin	Homo sapiens	22-25
25321523-1	2014	We demonstrated the InGaN/GaN-based light-emitting diodes (LEDs) with SiO2 nanoparticles embedded in nanopillar GaN template.	Silicon Dioxide	70-74	gigaxonin	Homo sapiens	26-29
25489282-2	2014	In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor deposition.	Aluminum	56-58	gigaxonin	Homo sapiens	97-100
25489282-2	2014	In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor deposition.	Metals	114-119	gigaxonin	Homo sapiens	97-100
25489282-3	2014	X-ray diffraction, scanning electron microscopy, and scanning transmission electron microscopy show that the films lattice-matched with GaN can have a very smooth surface with good crystallinity and uniform distribution of Al and In in AlInN.	Aluminum	223-225	gigaxonin	Homo sapiens	136-139
25379929-4	2014	The application to the specific cases of nonpolar (101 0) facets of GaN and ZnO reveals a significant role for the structural motifs at the interface, including the degree of interface water dissociation and the dynamical fluctuations in the interface Zn-O and O-H bond orientations.	Water	185-190	gigaxonin	Homo sapiens	68-71
25379929-4	2014	The application to the specific cases of nonpolar (101 0) facets of GaN and ZnO reveals a significant role for the structural motifs at the interface, including the degree of interface water dissociation and the dynamical fluctuations in the interface Zn-O and O-H bond orientations.	Zinc Oxide	252-256	gigaxonin	Homo sapiens	68-71
25321523-2	2014	With the SiO2 nanoparticles placed between the GaN nanopillars, subsequent overgrowth of GaN layer started only on the exposed tips of the nanopillars and rapidly switched to the lateral growth mode.	Silicon Dioxide	9-13	gigaxonin	Homo sapiens	89-92
25321523-5	2014	The effect is attributed mainly to the improved light extraction efficiency due to additional scattering in the nanopillars-SiO2-pores portion of the structure, also to the increased internal quantum efficiency caused by a decreased dislocation density and relaxed strain due to the GaN nanopillars.	Silicon Dioxide	124-128	gigaxonin	Homo sapiens	283-286
25232299-4	2014	Highly efficient ZnO excitonic recombination at reverse bias is caused by electrons tunneling from deep-level states near the n-ZnO/p-GaN interface to the conduction band in n-ZnO.	Zinc Oxide	17-20	gigaxonin	Homo sapiens	134-137
25232299-4	2014	Highly efficient ZnO excitonic recombination at reverse bias is caused by electrons tunneling from deep-level states near the n-ZnO/p-GaN interface to the conduction band in n-ZnO.	n-zno	126-131	gigaxonin	Homo sapiens	134-137
25232299-4	2014	Highly efficient ZnO excitonic recombination at reverse bias is caused by electrons tunneling from deep-level states near the n-ZnO/p-GaN interface to the conduction band in n-ZnO.	n-zno	174-179	gigaxonin	Homo sapiens	134-137
24910044-1	2014	Dye-sensitized solar cells (DSSCs) are fabricated with gallium nitride-titanium dioxide (GaN-TiO2) composite photoelectrodes to enhance the power conversion efficiency.	gallium nitride-titanium dioxide	55-87	gigaxonin	Homo sapiens	89-92
24910044-2	2014	The value of power conversion efficiency increases with the incorporation of GaN in TiO2 matrix and reaches a maximum at 0.05 wt% GaN.	titanium dioxide	84-88	gigaxonin	Homo sapiens	77-80
24910044-2	2014	The value of power conversion efficiency increases with the incorporation of GaN in TiO2 matrix and reaches a maximum at 0.05 wt% GaN.	titanium dioxide	84-88	gigaxonin	Homo sapiens	130-133
24910044-4	2014	From the EIS of electrolyte/dye/GaN-TiO2 interface resistances under illumination and in the dark, a decrease in the charge transfer resistance and an increase in the charge recombination resistance of the DSSCs are obtained after the inclusion of GaN (0.01-0.05 wt%) in the TiO2 matrix.	titanium dioxide	36-40	gigaxonin	Homo sapiens	32-35
24910044-4	2014	From the EIS of electrolyte/dye/GaN-TiO2 interface resistances under illumination and in the dark, a decrease in the charge transfer resistance and an increase in the charge recombination resistance of the DSSCs are obtained after the inclusion of GaN (0.01-0.05 wt%) in the TiO2 matrix.	titanium dioxide	36-40	gigaxonin	Homo sapiens	248-251
24910044-4	2014	From the EIS of electrolyte/dye/GaN-TiO2 interface resistances under illumination and in the dark, a decrease in the charge transfer resistance and an increase in the charge recombination resistance of the DSSCs are obtained after the inclusion of GaN (0.01-0.05 wt%) in the TiO2 matrix.	titanium dioxide	275-279	gigaxonin	Homo sapiens	32-35
24910044-4	2014	From the EIS of electrolyte/dye/GaN-TiO2 interface resistances under illumination and in the dark, a decrease in the charge transfer resistance and an increase in the charge recombination resistance of the DSSCs are obtained after the inclusion of GaN (0.01-0.05 wt%) in the TiO2 matrix.	titanium dioxide	275-279	gigaxonin	Homo sapiens	248-251
24910044-5	2014	The power conversion efficiency of the DSSC based on the GaN (0.05 wt%)-TiO2 composite photoelectrode is enhanced by ~61% in comparison with a pristine TiO2 photoelectrode.	titanium dioxide	72-76	gigaxonin	Homo sapiens	57-60
24910044-5	2014	The power conversion efficiency of the DSSC based on the GaN (0.05 wt%)-TiO2 composite photoelectrode is enhanced by ~61% in comparison with a pristine TiO2 photoelectrode.	titanium dioxide	152-156	gigaxonin	Homo sapiens	57-60
25936066-0	2014	Nano-scale SiO2 patterned n-type GaN substrate for 380 nm ultra violet light emitting diodes.	Silicon Dioxide	11-15	gigaxonin	Homo sapiens	33-36
25121911-1	2014	This Letter describes a double-sided process to fabricate freestanding membrane devices on a GaN-on-silicon platform.	Silicon	100-107	gigaxonin	Homo sapiens	93-96
24946753-0	2014	Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.	Graphite	21-29	gigaxonin	Homo sapiens	32-35
25936066-0	2014	Nano-scale SiO2 patterned n-type GaN substrate for 380 nm ultra violet light emitting diodes.	ultra violet	58-70	gigaxonin	Homo sapiens	33-36
25936066-2	2014	Wet etched self-assembled indium tin oxide (ITO) nano clusters serves as dry etching mask for converting the SiO2 layer grown on n-GaN template into SiO2 nano dots by inductively coupled plasma etching.	indium tin oxide	26-42	gigaxonin	Homo sapiens	131-134
25936066-2	2014	Wet etched self-assembled indium tin oxide (ITO) nano clusters serves as dry etching mask for converting the SiO2 layer grown on n-GaN template into SiO2 nano dots by inductively coupled plasma etching.	indium tin oxide	44-47	gigaxonin	Homo sapiens	131-134
25936066-2	2014	Wet etched self-assembled indium tin oxide (ITO) nano clusters serves as dry etching mask for converting the SiO2 layer grown on n-GaN template into SiO2 nano dots by inductively coupled plasma etching.	Silicon Dioxide	109-113	gigaxonin	Homo sapiens	131-134
25936066-2	2014	Wet etched self-assembled indium tin oxide (ITO) nano clusters serves as dry etching mask for converting the SiO2 layer grown on n-GaN template into SiO2 nano dots by inductively coupled plasma etching.	Silicon Dioxide	149-153	gigaxonin	Homo sapiens	131-134
25008561-5	2014	The radiative and nonradiative recombination processes of quantum dots are strongly affected by adjusting the capping thickness, and the GaN quantum dots with 12 monolayers-thick Al(0.5)Ga(0.5)N capping layer show a remarkably high internal quantum efficiency of more than 80% at room temperature.	Aluminum	179-181	gigaxonin	Homo sapiens	137-140
24978068-1	2014	Light extraction efficiency of GaN-based light emitting diodes were significantly enhanced using silver nanostructures incorporated in periodic micro-hole patterned multi quantum wells (MQWs).	Silver	97-103	gigaxonin	Homo sapiens	31-34
24927071-5	2014	The porous TiO2 nanoparticle coatings were fabricated on the surface of GaN LEDs to enhance their light output.	titanium dioxide	11-15	gigaxonin	Homo sapiens	72-75
23918223-0	2013	Effects of trimethylaluminium and tetrakis(ethylmethylamino) hafnium in the early stages of the atomic-layer-deposition of aluminum oxide and hafnium oxide on hydroxylated GaN nanoclusters.	Trimethylaluminum	11-29	gigaxonin	Homo sapiens	172-175
24722064-3	2014	Here we report the use of X-ray microdiffraction to study the structural properties of GaN microcrystals grown by ES-SAG.	es-sag	114-120	gigaxonin	Homo sapiens	87-90
24837761-2	2014	Thanks to a cross-sectional approach, scanning electron beam probing techniques were employed here to obtain a nanoscale spatially resolved analysis of GaN core-shell wire p-n junctions grown by catalyst-free metal-organic vapor phase epitaxy on GaN and Si substrates.	Metals	209-214	gigaxonin	Homo sapiens	152-155
24837761-2	2014	Thanks to a cross-sectional approach, scanning electron beam probing techniques were employed here to obtain a nanoscale spatially resolved analysis of GaN core-shell wire p-n junctions grown by catalyst-free metal-organic vapor phase epitaxy on GaN and Si substrates.	Silicon	254-256	gigaxonin	Homo sapiens	152-155
24826797-0	2014	Photoinduced conversion of methane into benzene over GaN nanowires.	Methane	27-34	gigaxonin	Homo sapiens	53-56
24826797-0	2014	Photoinduced conversion of methane into benzene over GaN nanowires.	Benzene	40-47	gigaxonin	Homo sapiens	53-56
24826797-3	2014	Herein we demonstrate that Si-doped GaN nanowires (NWs) with a 97% rationally constructed m-plane can directly convert methane into benzene and molecular hydrogen under ultraviolet (UV) illumination at rt.	Silicon	27-29	gigaxonin	Homo sapiens	36-39
24826797-3	2014	Herein we demonstrate that Si-doped GaN nanowires (NWs) with a 97% rationally constructed m-plane can directly convert methane into benzene and molecular hydrogen under ultraviolet (UV) illumination at rt.	Methane	119-126	gigaxonin	Homo sapiens	36-39
24826797-3	2014	Herein we demonstrate that Si-doped GaN nanowires (NWs) with a 97% rationally constructed m-plane can directly convert methane into benzene and molecular hydrogen under ultraviolet (UV) illumination at rt.	Benzene	132-139	gigaxonin	Homo sapiens	36-39
24826797-3	2014	Herein we demonstrate that Si-doped GaN nanowires (NWs) with a 97% rationally constructed m-plane can directly convert methane into benzene and molecular hydrogen under ultraviolet (UV) illumination at rt.	Hydrogen	154-162	gigaxonin	Homo sapiens	36-39
24826797-5	2014	The incorporation of a Si-donor or Mg-acceptor dopants into GaN also has a large influence on the photocatalytic performance.	Silicon	23-25	gigaxonin	Homo sapiens	60-63
24826797-5	2014	The incorporation of a Si-donor or Mg-acceptor dopants into GaN also has a large influence on the photocatalytic performance.	Magnesium	35-37	gigaxonin	Homo sapiens	60-63
24500417-0	2014	Quantum-confined GaN nanoparticles synthesized via liquid-ammonia-in-oil-microemulsions.	ammonia-in	58-68	gigaxonin	Homo sapiens	17-20
24500417-0	2014	Quantum-confined GaN nanoparticles synthesized via liquid-ammonia-in-oil-microemulsions.	Oils	69-72	gigaxonin	Homo sapiens	17-20
24500417-1	2014	GaN nanoparticles, 3-4 nm in size, are synthesized in a microemulsion using liquid ammonia as the polar droplet phase.	Ammonia	83-90	gigaxonin	Homo sapiens	0-3
24515006-0	2014	Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.	aluminum gallium nitride	97-102	gigaxonin	Homo sapiens	54-57
24369453-0	2013	Effect of same-temperature GaN cap layer on the InGaN/GaN multiquantum well of green light-emitting diode on silicon substrate.	Silicon	109-116	gigaxonin	Homo sapiens	27-30
24369453-0	2013	Effect of same-temperature GaN cap layer on the InGaN/GaN multiquantum well of green light-emitting diode on silicon substrate.	Silicon	109-116	gigaxonin	Homo sapiens	50-53
24369453-1	2013	GaN green LED was grown on Si (111) substrate by MOCVD.	Silicon	27-29	gigaxonin	Homo sapiens	0-3
24164686-0	2013	Synthesis, microstructure, and cathodoluminescence of [0001]-oriented GaN nanorods grown on conductive graphite substrate.	Graphite	103-111	gigaxonin	Homo sapiens	70-73
24164686-1	2013	One-dimensional GaN nanorods with corrugated morphology have been synthesized on graphite substrate without the assistance of any metal catalyst through a feasible thermal evaporation process.	Graphite	81-89	gigaxonin	Homo sapiens	16-19
24164686-1	2013	One-dimensional GaN nanorods with corrugated morphology have been synthesized on graphite substrate without the assistance of any metal catalyst through a feasible thermal evaporation process.	Metals	130-135	gigaxonin	Homo sapiens	16-19
24164686-4	2013	The stabilization of the electrostatic surface energy of {1011} polar surface in a wurtzite-type hexagonal structure plays a key role in the formation of GaN nanorods with corrugated morphology.	wurtzite	83-91	gigaxonin	Homo sapiens	154-157
24329457-2	2013	By measuring the reflection coefficient at the same surface location at the interface between GaN and air, and between GaN and the material to characterize, we get access to the THz amplitude and phase spectra of the acoustic phonon reflection.	thz	178-181	gigaxonin	Homo sapiens	119-122
23918223-5	2013	The formation of a Ga-N(CH3)(CH2CH3) bond during the ALD of HfO2 using TEMAH as the reactant without breaking the Hf-N bond could be the key part of the mechanism behind the formation of an interface layer at the HfO2/GaN interface.	hafnium oxide	60-64	gigaxonin	Homo sapiens	218-221
23918223-5	2013	The formation of a Ga-N(CH3)(CH2CH3) bond during the ALD of HfO2 using TEMAH as the reactant without breaking the Hf-N bond could be the key part of the mechanism behind the formation of an interface layer at the HfO2/GaN interface.	Nitrogen	22-23	gigaxonin	Homo sapiens	218-221
23918223-0	2013	Effects of trimethylaluminium and tetrakis(ethylmethylamino) hafnium in the early stages of the atomic-layer-deposition of aluminum oxide and hafnium oxide on hydroxylated GaN nanoclusters.	Tetrakis(ethylmethylamino) hafnium	34-68	gigaxonin	Homo sapiens	172-175
23918223-0	2013	Effects of trimethylaluminium and tetrakis(ethylmethylamino) hafnium in the early stages of the atomic-layer-deposition of aluminum oxide and hafnium oxide on hydroxylated GaN nanoclusters.	Aluminum Oxide	123-137	gigaxonin	Homo sapiens	172-175
23918223-0	2013	Effects of trimethylaluminium and tetrakis(ethylmethylamino) hafnium in the early stages of the atomic-layer-deposition of aluminum oxide and hafnium oxide on hydroxylated GaN nanoclusters.	hafnium oxide	142-155	gigaxonin	Homo sapiens	172-175
23918223-1	2013	We calculate the interactions of two atomic layer deposition (ALD) reactants, trimethylaluminium (TMA) and tetrakis(ethylmethylamino) hafnium (TEMAH) with the hydroxylated Ga-face of GaN clusters when aluminum oxide and hafnium oxide, respectively, are being deposited.	Trimethylaluminum	78-96	gigaxonin	Homo sapiens	183-186
23918223-1	2013	We calculate the interactions of two atomic layer deposition (ALD) reactants, trimethylaluminium (TMA) and tetrakis(ethylmethylamino) hafnium (TEMAH) with the hydroxylated Ga-face of GaN clusters when aluminum oxide and hafnium oxide, respectively, are being deposited.	tma	98-101	gigaxonin	Homo sapiens	183-186
23918223-1	2013	We calculate the interactions of two atomic layer deposition (ALD) reactants, trimethylaluminium (TMA) and tetrakis(ethylmethylamino) hafnium (TEMAH) with the hydroxylated Ga-face of GaN clusters when aluminum oxide and hafnium oxide, respectively, are being deposited.	Tetrakis(ethylmethylamino) hafnium	107-141	gigaxonin	Homo sapiens	183-186
23918223-1	2013	We calculate the interactions of two atomic layer deposition (ALD) reactants, trimethylaluminium (TMA) and tetrakis(ethylmethylamino) hafnium (TEMAH) with the hydroxylated Ga-face of GaN clusters when aluminum oxide and hafnium oxide, respectively, are being deposited.	Aluminum Oxide	201-215	gigaxonin	Homo sapiens	183-186
23918223-1	2013	We calculate the interactions of two atomic layer deposition (ALD) reactants, trimethylaluminium (TMA) and tetrakis(ethylmethylamino) hafnium (TEMAH) with the hydroxylated Ga-face of GaN clusters when aluminum oxide and hafnium oxide, respectively, are being deposited.	hafnium oxide	220-233	gigaxonin	Homo sapiens	183-186
23918223-3	2013	We find that TMA spontaneously interacts with hydroxylated GaN; however it does not follow the atomic layer deposition reaction path unless there is an excess in potential energy introduced in the clusters at the beginning of the optimization, for instance, using larger bond lengths of various bonds in the initial structures.	tma	13-16	gigaxonin	Homo sapiens	59-62
23849302-2	2013	Herein, we have developed heterojunction LEDs based on the well-aligned ZnO nanorods and nanotubes on the p-type GaN with the insertion of the NiO buffer layer that showed enhancement in the light emission.	Zinc Oxide	72-75	gigaxonin	Homo sapiens	113-116
24116792-0	2013	Spontaneous growth of gallium-filled microcapillaries on ion-bombarded GaN.	Gallium	22-29	gigaxonin	Homo sapiens	71-74
23849302-7	2013	Introducing a sandwich-thin layer of NiO between the n-type ZnO and the p-type GaN will possibly block the injection of electrons from the ZnO to the GaN.	Zinc Oxide	139-142	gigaxonin	Homo sapiens	79-82
24104122-0	2013	InGaN/GaN microcolumn light-emitting diode arrays with sidewall metal contact.	Metals	64-69	gigaxonin	Homo sapiens	2-5
24104122-1	2013	In this study, we produce InGaN/GaN microcolumn LED (MC-LED) arrays having nonpolar metal sidewall contacts using a top-down method, where the metal contacts only with the sidewall of the columnar LEDs with an open top for transparency.	Methylcholanthrene	53-55	gigaxonin	Homo sapiens	28-31
23913061-1	2013	Erbium-doped GaN (GaN:Er) epilayers were synthesized by metal organic chemical vapor deposition.	Metals	56-61	gigaxonin	Homo sapiens	13-16
23913061-1	2013	Erbium-doped GaN (GaN:Er) epilayers were synthesized by metal organic chemical vapor deposition.	Metals	56-61	gigaxonin	Homo sapiens	18-21
23849302-2	2013	Herein, we have developed heterojunction LEDs based on the well-aligned ZnO nanorods and nanotubes on the p-type GaN with the insertion of the NiO buffer layer that showed enhancement in the light emission.	nio	143-146	gigaxonin	Homo sapiens	113-116
23849302-7	2013	Introducing a sandwich-thin layer of NiO between the n-type ZnO and the p-type GaN will possibly block the injection of electrons from the ZnO to the GaN.	Zinc Oxide	139-142	gigaxonin	Homo sapiens	150-153
23849302-4	2013	X-ray diffraction study describes the wurtzite crystal structure array of ZnO nanorods with the involvement of GaN at the (002) peak.	Zinc Oxide	74-77	gigaxonin	Homo sapiens	111-114
23849302-7	2013	Introducing a sandwich-thin layer of NiO between the n-type ZnO and the p-type GaN will possibly block the injection of electrons from the ZnO to the GaN.	nio	37-40	gigaxonin	Homo sapiens	79-82
23849302-7	2013	Introducing a sandwich-thin layer of NiO between the n-type ZnO and the p-type GaN will possibly block the injection of electrons from the ZnO to the GaN.	nio	37-40	gigaxonin	Homo sapiens	150-153
23849302-7	2013	Introducing a sandwich-thin layer of NiO between the n-type ZnO and the p-type GaN will possibly block the injection of electrons from the ZnO to the GaN.	Zinc Oxide	60-63	gigaxonin	Homo sapiens	150-153
23473203-1	2013	We demonstrate that yellow luminescence often observed in both carbon-doped and pristine GaN is the result of electronic transitions via the C(N)-O(N) complex.	Carbon	63-69	gigaxonin	Homo sapiens	89-92
23617559-0	2013	Thermal functionalization of GaN surfaces with 1-alkenes.	1-alkenes	47-56	gigaxonin	Homo sapiens	29-32
23679914-2	2013	We found that the activation barrier of H2O dissociation at the kinked site of the Ga-terminated GaN surface is about 0.8 eV, which is significantly lower than that at the stepped site of about 1.2 eV.	Water	40-43	gigaxonin	Homo sapiens	97-100
23679914-2	2013	We found that the activation barrier of H2O dissociation at the kinked site of the Ga-terminated GaN surface is about 0.8 eV, which is significantly lower than that at the stepped site of about 1.2 eV.	Gallium	83-85	gigaxonin	Homo sapiens	97-100
23679914-3	2013	This is consistent with the experimental observation where a step-terrace structure is observed after the etching process of Ga-terminated GaN surfaces with catalyst-referred etching method.	Gallium	125-127	gigaxonin	Homo sapiens	139-142
23534642-2	2013	A phase transition from wurtzite to rock salt structure is known to occur in bulk InN at 12.1 GPa and higher values of pressure for AlN and GaN.	wurtzite	24-32	gigaxonin	Homo sapiens	140-143
23534642-2	2013	A phase transition from wurtzite to rock salt structure is known to occur in bulk InN at 12.1 GPa and higher values of pressure for AlN and GaN.	Sodium Chloride	36-45	gigaxonin	Homo sapiens	140-143
23428162-0	2013	Hot carrier-driven catalytic reactions on Pt-CdSe-Pt nanodumbbells and Pt/GaN under light irradiation.	cdse	45-49	gigaxonin	Homo sapiens	74-77
23324138-0	2013	Growth of beta-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation.	beta-ga2o3	10-20	gigaxonin	Homo sapiens	42-45
23324138-0	2013	Growth of beta-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation.	Hydrogen	71-79	gigaxonin	Homo sapiens	25-28
23324138-0	2013	Growth of beta-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation.	Hydrogen	71-79	gigaxonin	Homo sapiens	42-45
23305126-0	2013	Impact of interlayer processing conditions on the performance of GaN light-emitting diode with specific NiOx/graphene electrode.	niox/graphene	104-117	gigaxonin	Homo sapiens	65-68
23305126-1	2013	This paper reports on the evaluation of the impact of introducing interlayers and postmetallization annealing on the graphene/p-GaN ohmic contact formation and performance of associated devices.	Graphite	117-125	gigaxonin	Homo sapiens	128-131
23305126-3	2013	Direct graphene/p-GaN interface was identified to be highly rectifying and postmetallization annealing improved the contact characteristics as a result of improved adhesion between the graphene and the p-GaN.	Graphite	7-15	gigaxonin	Homo sapiens	18-21
23305126-3	2013	Direct graphene/p-GaN interface was identified to be highly rectifying and postmetallization annealing improved the contact characteristics as a result of improved adhesion between the graphene and the p-GaN.	Graphite	7-15	gigaxonin	Homo sapiens	204-207
23305126-3	2013	Direct graphene/p-GaN interface was identified to be highly rectifying and postmetallization annealing improved the contact characteristics as a result of improved adhesion between the graphene and the p-GaN.	Graphite	185-193	gigaxonin	Homo sapiens	18-21
23305126-3	2013	Direct graphene/p-GaN interface was identified to be highly rectifying and postmetallization annealing improved the contact characteristics as a result of improved adhesion between the graphene and the p-GaN.	Graphite	185-193	gigaxonin	Homo sapiens	204-207
23305126-5	2013	Temperature-dependent I-V measurements revealed that the current transport was modified from thermionic field emission for the direct graphene/p-GaN contact to tunneling for the graphene/metal/p-GaN contacts.	Graphite	134-142	gigaxonin	Homo sapiens	145-148
23305126-5	2013	Temperature-dependent I-V measurements revealed that the current transport was modified from thermionic field emission for the direct graphene/p-GaN contact to tunneling for the graphene/metal/p-GaN contacts.	Graphite	134-142	gigaxonin	Homo sapiens	195-198
23305126-5	2013	Temperature-dependent I-V measurements revealed that the current transport was modified from thermionic field emission for the direct graphene/p-GaN contact to tunneling for the graphene/metal/p-GaN contacts.	Graphite	178-186	gigaxonin	Homo sapiens	145-148
23305126-5	2013	Temperature-dependent I-V measurements revealed that the current transport was modified from thermionic field emission for the direct graphene/p-GaN contact to tunneling for the graphene/metal/p-GaN contacts.	Graphite	178-186	gigaxonin	Homo sapiens	195-198
23305126-7	2013	InGaN/GaN light-emitting diodes with NiO(x)/graphene current spreading electrode offered a forward voltage of 3.16 V comparable to that of its Ni/Au counterpart, but ended up with relatively low light output power.	nio(x)	37-43	gigaxonin	Homo sapiens	2-5
23305126-7	2013	InGaN/GaN light-emitting diodes with NiO(x)/graphene current spreading electrode offered a forward voltage of 3.16 V comparable to that of its Ni/Au counterpart, but ended up with relatively low light output power.	Graphite	44-52	gigaxonin	Homo sapiens	2-5
23368341-5	2012	The neutral Zn impurity site together with a N vacancy is considered as the carrier-capturing deep impurity level in bulk GaN.	Zinc	12-14	gigaxonin	Homo sapiens	122-125
23646580-1	2013	In this work, periodic arrays of various ZnO nanostructures were fabricated on both Si and GaN substrates via a facile hydrothermal process.	Zinc Oxide	41-44	gigaxonin	Homo sapiens	91-94
23646580-8	2013	It is found that the highly ordered and vertically aligned ZnO nanorods epitaxially grow on the GaN substrate, while the ZnO nanoflowers on Si substrates are random oriented.	Zinc Oxide	59-62	gigaxonin	Homo sapiens	96-99
23259506-1	2013	Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes.	Zinc Oxide	100-103	gigaxonin	Homo sapiens	153-161
23259506-1	2013	Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes.	Zinc Oxide	100-103	gigaxonin	Homo sapiens	188-196
23259506-1	2013	Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes.	Magnesium	132-141	gigaxonin	Homo sapiens	148-151
23259506-1	2013	Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes.	Magnesium	132-141	gigaxonin	Homo sapiens	153-161
23259506-1	2013	Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes.	n-zno	180-185	gigaxonin	Homo sapiens	153-161
23259506-2	2013	The room-temperature electroluminescence exhibits a dominant ultraviolet peak at lambda   370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation.	Zinc Oxide	220-223	gigaxonin	Homo sapiens	158-161
23259506-2	2013	The room-temperature electroluminescence exhibits a dominant ultraviolet peak at lambda   370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation.	Zinc Oxide	220-223	gigaxonin	Homo sapiens	271-279
23259506-2	2013	The room-temperature electroluminescence exhibits a dominant ultraviolet peak at lambda   370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation.	Zinc Oxide	220-223	gigaxonin	Homo sapiens	158-161
23259506-2	2013	The room-temperature electroluminescence exhibits a dominant ultraviolet peak at lambda   370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation.	Zinc Oxide	220-223	gigaxonin	Homo sapiens	271-279
23373938-0	2013	Blocking growth by an electrically active subsurface layer: the effect of Si as an antisurfactant in the growth of GaN.	Silicon	74-76	gigaxonin	Homo sapiens	115-118
23373938-1	2013	Combining aberration corrected high resolution transmission electron microscopy and density functional theory calculations we propose an explanation of the antisurfactant effect of Si in GaN growth.	Silicon	181-183	gigaxonin	Homo sapiens	187-190
23373938-3	2013	Our density functional theory calculations show that GaN growth on top of this SiGaN(3) layer is inhibited by forming an energetically unfavorable electrical dipole moment that increases with layer thickness and that is caused by charge transfer between cation dangling bonds at the surface to V(Ga) bound at subsurface sites.	sigan(3)	79-87	gigaxonin	Homo sapiens	53-56
23931822-7	2013	The disease is caused by mutation in the GAN gene encoding for gigaxonin, a member of BTB-Kelch.	gigaxonin	63-72	gigaxonin	Homo sapiens	41-44
23931822-7	2013	The disease is caused by mutation in the GAN gene encoding for gigaxonin, a member of BTB-Kelch.	btb	86-89	gigaxonin	Homo sapiens	41-44
23931822-7	2013	The disease is caused by mutation in the GAN gene encoding for gigaxonin, a member of BTB-Kelch.	kelch	90-95	gigaxonin	Homo sapiens	41-44
23215512-0	2012	Identification of the nitrogen split interstitial (N-N)(N) in GaN.	Nitrogen	22-30	gigaxonin	Homo sapiens	62-65
23080432-7	2012	These results provided experimental verification for obtaining field enhancement by using Al nanoparticles on GaN.	Aluminum	90-92	gigaxonin	Homo sapiens	110-113
23130785-6	2012	These N-polar GaN nanowires are shown to be accidental in that the necessary polarity inversion is induced by the formation of Si(x)N. The present findings thus demonstrate that spontaneously formed GaN nanowires are irrevocably N-polar.	Silicon	127-129	gigaxonin	Homo sapiens	14-17
23130785-6	2012	These N-polar GaN nanowires are shown to be accidental in that the necessary polarity inversion is induced by the formation of Si(x)N. The present findings thus demonstrate that spontaneously formed GaN nanowires are irrevocably N-polar.	Silicon	127-129	gigaxonin	Homo sapiens	199-202
23186116-2	2012	The LD with MQWs/GaN exhibits ultraviolet random lasing under electrical excitation, while that with MQWs/Si does not.	lasing	49-55	gigaxonin	Homo sapiens	12-20
23215512-1	2012	Combining electron paramagnetic resonance, density functional theory, and positron annihilation spectroscopy (PAS), we identify the nitrogen interstitial defect in GaN.	Aminosalicylic Acid	110-113	gigaxonin	Homo sapiens	164-167
23215512-1	2012	Combining electron paramagnetic resonance, density functional theory, and positron annihilation spectroscopy (PAS), we identify the nitrogen interstitial defect in GaN.	Nitrogen	132-140	gigaxonin	Homo sapiens	164-167
23037534-0	2012	Mn-doped GaN as photoelectrodes for the photoelectrolysis of water under visible light.	Water	61-66	gigaxonin	Homo sapiens	9-12
23037534-4	2012	Under the visible light illumination and a bias voltage below 1.2 V, the Mn-doped GaN photoelectrodes could drive the water splitting reaction for hydrogen generation.	Water	118-123	gigaxonin	Homo sapiens	82-85
23037534-1	2012	Hydrogen generation through direct photoelectrolysis of water was studied using photoelectrochemical (PEC) cells made of Mn-doped GaN photoelectrodes.	Hydrogen	0-8	gigaxonin	Homo sapiens	130-133
23037534-4	2012	Under the visible light illumination and a bias voltage below 1.2 V, the Mn-doped GaN photoelectrodes could drive the water splitting reaction for hydrogen generation.	Hydrogen	147-155	gigaxonin	Homo sapiens	82-85
23037534-5	2012	However, hydrogen generation could not be achieved under the same condition wherein undoped GaN photoelectrodes were used.	Hydrogen	9-17	gigaxonin	Homo sapiens	92-95
22627099-4	2012	As a result, the transformation of the energy spectra with temperature observed experimentally in ZnO and GaN corresponds to the interference between the TMI and TI terms.	phospho-tyrosol-indomethacin	154-157	gigaxonin	Homo sapiens	106-109
22331639-2	2012	Due to the polarization of ions in a crystal that has non-central symmetry in materials such as the wurtzite structured ZnO, GaN and InN, a piezoelectric potential (piezopotential) is created in the crystal by applying a stress.	wurtzite	100-108	gigaxonin	Homo sapiens	125-128
22551404-0	2012	Nanointerlayer induced electroluminescence transition from ultraviolet- to red-dominant mode for n-Mn:ZnO/N-GaN heterojunction.	Nicotinamide Mononucleotide	97-101	gigaxonin	Homo sapiens	108-111
22551404-0	2012	Nanointerlayer induced electroluminescence transition from ultraviolet- to red-dominant mode for n-Mn:ZnO/N-GaN heterojunction.	Zinc Oxide	102-105	gigaxonin	Homo sapiens	108-111
22587269-3	2012	We show that the ultraviolet photoluminescence peak attributed to Mg acceptors in GaN is likely related to Mg-H complexes, explaining the results of photoluminescence and electron paramagnetic resonance experiments.	Magnesium	66-68	gigaxonin	Homo sapiens	82-85
22460768-1	2012	We report on the electrochemical characteristics of GaN nanowire (NW) ensembles grown by plasma-assisted molecular beam epitaxy on Si111 substrates and on the influence of Si and Mg doping.	si111	131-136	gigaxonin	Homo sapiens	52-55
22460768-1	2012	We report on the electrochemical characteristics of GaN nanowire (NW) ensembles grown by plasma-assisted molecular beam epitaxy on Si111 substrates and on the influence of Si and Mg doping.	Silicon	131-133	gigaxonin	Homo sapiens	52-55
22460768-1	2012	We report on the electrochemical characteristics of GaN nanowire (NW) ensembles grown by plasma-assisted molecular beam epitaxy on Si111 substrates and on the influence of Si and Mg doping.	Magnesium	179-181	gigaxonin	Homo sapiens	52-55
22587269-3	2012	We show that the ultraviolet photoluminescence peak attributed to Mg acceptors in GaN is likely related to Mg-H complexes, explaining the results of photoluminescence and electron paramagnetic resonance experiments.	mg-h	107-111	gigaxonin	Homo sapiens	82-85
22322935-0	2012	Electronic structure of ytterbium-implanted GaN at ambient and high pressure: experimental and crystal field studies.	Ytterbium	24-33	gigaxonin	Homo sapiens	44-47
22369762-0	2012	Thermionic emission from the 2DEG assisted by image-charge-induced barrier lowering in AlInN/AlN/GaN heterostructures.	2deg	29-33	gigaxonin	Homo sapiens	97-100
22369762-3	2012	This model suggests that current transport is controlled by thermionic emission (TE) of the two-dimensional electron gas (2DEG) across the potential barrier at the heterointerface, where the image charges generated by the 2DEG induce a barrier lowering at the Al(1-x)In(x)N/GaN interface, enhancing electron transport.	2deg	122-126	gigaxonin	Homo sapiens	274-277
22369762-3	2012	This model suggests that current transport is controlled by thermionic emission (TE) of the two-dimensional electron gas (2DEG) across the potential barrier at the heterointerface, where the image charges generated by the 2DEG induce a barrier lowering at the Al(1-x)In(x)N/GaN interface, enhancing electron transport.	2deg	222-226	gigaxonin	Homo sapiens	274-277
22409032-1	2011	We present the enhanced wet etching of GaN epilayer implanted with Au+ ion.	Gold	67-70	gigaxonin	Homo sapiens	39-42
22213372-0	2012	Microstructures of GaN thin films grown on graphene layers.	Graphite	43-51	gigaxonin	Homo sapiens	19-22
22213372-1	2012	Plan-view and cross-sectional transmission electron microscopy images show the microstructural properties of GaN thin films grown on graphene layers, including dislocation types and density, crystalline orientation and grain boundaries.	Graphite	133-141	gigaxonin	Homo sapiens	109-112
22213372-2	2012	The roles of ZnO nanowalls and GaN intermediate layers in the heteroepitaxial growth of GaN on graphene, revealed by cross-sectional transmission electron microscopy, are also discussed.	Zinc Oxide	13-16	gigaxonin	Homo sapiens	88-91
22213372-2	2012	The roles of ZnO nanowalls and GaN intermediate layers in the heteroepitaxial growth of GaN on graphene, revealed by cross-sectional transmission electron microscopy, are also discussed.	Graphite	95-103	gigaxonin	Homo sapiens	88-91
22212800-2	2012	The TAP arrays embedded at the sapphire/GaN interface act as light reflectors and refractors, and thereby improve the light output power due to the redirection of light into escape cones on both the front and back sides of the LED.	2,4,6-triaminopyrimidine	4-7	gigaxonin	Homo sapiens	40-43
22409032-2	2011	Patterned GaN with 2 microm-wide sink-like strips was achieved by using 500 keV Au+ ion implantation and KOH etching.	potassium hydroxide	105-108	gigaxonin	Homo sapiens	10-13
22409032-7	2011	As-deposited SiO2 spheres were used to mask the GaN sample in implantation process to investigate the etching effect.	Silicon Dioxide	13-17	gigaxonin	Homo sapiens	48-51
22109019-0	2011	Single n-GaN microwire/p-Silicon thin film heterojunction light-emitting diode.	Silicon	25-32	gigaxonin	Homo sapiens	9-12
22109019-3	2011	These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto pre-patterned electrodes on a p-type Si (100) substrate.	Silicon	129-131	gigaxonin	Homo sapiens	13-16
21942444-5	2011	While the ruthenium complex attached to p-GaN under an oxygen-free atmosphere gives significantly long mean emission lifetimes for the indicator dye (ca.	Ruthenium	10-19	gigaxonin	Homo sapiens	42-45
21942444-5	2011	While the ruthenium complex attached to p-GaN under an oxygen-free atmosphere gives significantly long mean emission lifetimes for the indicator dye (ca.	Oxygen	55-61	gigaxonin	Homo sapiens	42-45
21942444-9	2011	However, for p-GaN/dye materials, the luminescence decay accelerates in the presence of O(2).	Oxygen	88-92	gigaxonin	Homo sapiens	15-18
21841222-1	2011	We report on the magnetic and structural properties of Cr-doped GaN prepared by ion implantation of epitaxial thin films.	Chromium	55-57	gigaxonin	Homo sapiens	64-67
21841222-2	2011	Based on a detailed analysis of the magnetometry data, we demonstrate that the magnetic interactions between Cr moments in GaN are antiferromagnetic (AFM).	Chromium	109-111	gigaxonin	Homo sapiens	123-126
21705828-3	2011	Based on these results not only Si-Ge heterojunctions seem to be possible using the vapor-liquid-solid growth process but also heterojunctions in optoelectronic III-V compounds such as InGaAs/GaAs or group III nitride compounds such as InGaN/GaN as well as axial p-n junctions in Si nanowires.	Silicon	32-34	gigaxonin	Homo sapiens	238-241
21711801-0	2011	Gallium hydride vapor phase epitaxy of GaN nanowires.	Gallium	0-7	gigaxonin	Homo sapiens	39-42
21747567-0	2011	Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper.	Silicon	78-80	gigaxonin	Homo sapiens	27-30
21747567-0	2011	Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper.	Copper	106-112	gigaxonin	Homo sapiens	27-30
21508502-0	2011	Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability.	violet-blue	0-11	gigaxonin	Homo sapiens	28-31
21711945-0	2011	Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE.	ligao2	35-41	gigaxonin	Homo sapiens	28-31
21711945-1	2011	We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy.	ligao2	91-97	gigaxonin	Homo sapiens	48-51
21611896-16	2011	CONCLUSION: TJG showed a definite effect on the treatment of NERD with Gan-Wei incoordination syndrome, and it could improve the quality of life of NERD patient without obvious toxic and side effects.	7-cyclopropyl-N-[trans-4-(2-hydroxypropan-2-yl)cyclohexyl]-1,8-naphthyridine-3-carboxamide	12-15	gigaxonin	Homo sapiens	71-74
22121700-0	2011	Performance of GaN vertical light emitting diodes using wafer bonding process with Al-alloyed graphite substrate.	Graphite	94-102	gigaxonin	Homo sapiens	15-18
21593907-0	2011	High-power direct green laser oscillation of 598 mW in Pr(3+)-doped waterproof fluoroaluminate glass fiber excited by two-polarization-combined GaN laser diodes.	Direct Green	11-23	gigaxonin	Homo sapiens	144-147
21593907-0	2011	High-power direct green laser oscillation of 598 mW in Pr(3+)-doped waterproof fluoroaluminate glass fiber excited by two-polarization-combined GaN laser diodes.	waterproof	68-78	gigaxonin	Homo sapiens	144-147
21593907-1	2011	We demonstrated a high-power and highly efficient Pr-doped waterproof fluoride glass fiber laser at 522.2 nm excited by two-polarization-combined GaN laser diodes and achieved a subwatt output power of 598 mW and slope efficiency of 43.0%.	Fluorides	70-78	gigaxonin	Homo sapiens	146-149
21711801-3	2011	Increasing the H2 content leads to an increase in the growth rate, a reduction in the areal density of the GaN NWs and a suppression of the underlying amorphous (alpha)-like GaN layer which occurs without H2.	Hydrogen	15-17	gigaxonin	Homo sapiens	107-110
21711801-3	2011	Increasing the H2 content leads to an increase in the growth rate, a reduction in the areal density of the GaN NWs and a suppression of the underlying amorphous (alpha)-like GaN layer which occurs without H2.	Hydrogen	15-17	gigaxonin	Homo sapiens	174-177
21711801-4	2011	The increase in growth rate with H2 content is a direct consequence of the reaction of Ga with H2 which leads to the formation of Ga hydride that reacts efficiently with NH3 at the top of the GaN NWs.	Hydrogen	33-35	gigaxonin	Homo sapiens	192-195
21711801-4	2011	The increase in growth rate with H2 content is a direct consequence of the reaction of Ga with H2 which leads to the formation of Ga hydride that reacts efficiently with NH3 at the top of the GaN NWs.	Gallium	87-89	gigaxonin	Homo sapiens	192-195
21711801-4	2011	The increase in growth rate with H2 content is a direct consequence of the reaction of Ga with H2 which leads to the formation of Ga hydride that reacts efficiently with NH3 at the top of the GaN NWs.	Hydrogen	95-97	gigaxonin	Homo sapiens	192-195
21711801-4	2011	The increase in growth rate with H2 content is a direct consequence of the reaction of Ga with H2 which leads to the formation of Ga hydride that reacts efficiently with NH3 at the top of the GaN NWs.	ga hydride	130-140	gigaxonin	Homo sapiens	192-195
21711801-4	2011	The increase in growth rate with H2 content is a direct consequence of the reaction of Ga with H2 which leads to the formation of Ga hydride that reacts efficiently with NH3 at the top of the GaN NWs.	Ammonia	170-173	gigaxonin	Homo sapiens	192-195
21711801-5	2011	Moreover, the reduction in the areal density of the GaN NWs and suppression of the alpha-like GaN layer is attributed to the reaction of H2 with Ga in the immediate vicinity of the Au NPs.	Hydrogen	137-139	gigaxonin	Homo sapiens	52-55
21711801-5	2011	Moreover, the reduction in the areal density of the GaN NWs and suppression of the alpha-like GaN layer is attributed to the reaction of H2 with Ga in the immediate vicinity of the Au NPs.	Hydrogen	137-139	gigaxonin	Homo sapiens	94-97
20864782-0	2010	Investigation of the electronic transport in GaN nanowires containing GaN/AlN quantum discs.	Aluminum	74-77	gigaxonin	Homo sapiens	45-48
21242622-0	2011	Growth of GaN nanotubes by halide vapor phase epitaxy.	halide	27-33	gigaxonin	Homo sapiens	10-13
21242622-1	2011	We have investigated low temperature growth of GaN nanostructures using halide vapor phase epitaxy on c-oriented Al(2)O(3) and Au coated Al(2)O(3) substrates.	Gold	127-129	gigaxonin	Homo sapiens	47-50
21263586-1	2011	We demonstrate Au-nanoparticle-assisted random lasing from a powdered GaN sample.	Gold	15-17	gigaxonin	Homo sapiens	70-73
21263586-2	2011	In the presence of Au nanoparticles on GaN powder surfaces, several lasing lines are observed in photoexcited luminescence spectra near the center of the GaN band-edge emission peak.	Gold	19-21	gigaxonin	Homo sapiens	39-42
21263586-2	2011	In the presence of Au nanoparticles on GaN powder surfaces, several lasing lines are observed in photoexcited luminescence spectra near the center of the GaN band-edge emission peak.	Gold	19-21	gigaxonin	Homo sapiens	154-157
21711601-1	2011	Cracks appeared in GaN epitaxial layers which were grown by a novel method combining metal organic vapor-phase epitaxy (MOCVD) and hydride vapor-phase epitaxy (HVPE) in one chamber.	Metals	85-90	gigaxonin	Homo sapiens	19-22
20947945-1	2010	A new process for making single crystalline undoped and Ga-doped ZnS nanowires with simple evaporation and condensation procedures on Si and GaN is introduced.	Zinc	65-68	gigaxonin	Homo sapiens	141-144
20949505-1	2010	Different missense, nonsense and frameshift mutations in the GAN gene encoding gigaxonin have been described to cause giant axonal neuropathy, a severe early-onset progressive neurological disease with autosomal recessive inheritance.	gigaxonin	79-88	gigaxonin	Homo sapiens	61-64
20864782-5	2010	On the contrary, if no GaN shell is present, the current flows through the QDisc region and a reproducible negative differential resistance related to electron tunneling through the QDiscs can be observed for temperatures up to 250 K. The demonstration of the resonant tunneling in GaN/AlN superlattices is of major importance for the development of nitride-based far-infrared quantum cascade lasers operating at high temperature.	nitride	350-357	gigaxonin	Homo sapiens	23-26
20864782-5	2010	On the contrary, if no GaN shell is present, the current flows through the QDisc region and a reproducible negative differential resistance related to electron tunneling through the QDiscs can be observed for temperatures up to 250 K. The demonstration of the resonant tunneling in GaN/AlN superlattices is of major importance for the development of nitride-based far-infrared quantum cascade lasers operating at high temperature.	nitride	350-357	gigaxonin	Homo sapiens	282-285
20524692-1	2010	This paper describes the fabrication and characterization of photopolymerizable alkylphosphonate self-assembled monolayers (SAMs) on group-III nitride substrates including GaN and Al(x)Ga(1-x)N (AlGaN; x = 0.2 and 0.25).	alkylphosphonate	80-96	gigaxonin	Homo sapiens	172-175
21137731-0	2010	Light extraction efficiency enhancement of GaN-based light emitting diodes on n-GaN layer using a SiO2 photonic quasi-crystal overgrowth.	Nitrogen	15-16	gigaxonin	Homo sapiens	43-46
21137731-0	2010	Light extraction efficiency enhancement of GaN-based light emitting diodes on n-GaN layer using a SiO2 photonic quasi-crystal overgrowth.	Nitrogen	15-16	gigaxonin	Homo sapiens	80-83
21137731-1	2010	In this paper, GaN-based LEDs with a SiO2 photonic quasi-crystal (PQC) pattern on an n-GaN layer by nano-imprint lithography (NIL) are fabricated and investigated.	Silicon Dioxide	37-41	gigaxonin	Homo sapiens	15-18
21137731-3	2010	After 1000 h life test (55 degrees C/50 mA) condition, Normalized output power of LED with a SiO2 PQC pattern (LED III (d = 1.2 microm)) on an n-GaN layer only decreased by 5%.	Silicon Dioxide	93-97	gigaxonin	Homo sapiens	145-148
20524692-1	2010	This paper describes the fabrication and characterization of photopolymerizable alkylphosphonate self-assembled monolayers (SAMs) on group-III nitride substrates including GaN and Al(x)Ga(1-x)N (AlGaN; x = 0.2 and 0.25).	SAMS Peptide	124-128	gigaxonin	Homo sapiens	172-175
20099904-2	2010	We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO(2), GaN and Al(2)O(3) substrates using a thermal release tape.	epitaxial graphene	35-53	gigaxonin	Homo sapiens	98-101
20368676-0	2010	Large-scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodes.	Graphite	34-42	gigaxonin	Homo sapiens	90-93
20368676-1	2010	This work demonstrates a large-scale batch fabrication of GaN light-emitting diodes (LEDs) with patterned multi-layer graphene (MLG) as transparent conducting electrodes.	Graphite	118-126	gigaxonin	Homo sapiens	58-61
20099904-2	2010	We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO(2), GaN and Al(2)O(3) substrates using a thermal release tape.	eg	55-57	gigaxonin	Homo sapiens	98-101
20672083-2	2009	Si, Ge, SiGe, and GaN nanowires are compatible with hippocampal neurons due to their native oxide, but ZnO nanowires are toxic to neuron due to a release of Zn ion.	Oxides	92-97	gigaxonin	Homo sapiens	18-21
19755728-1	2009	We have performed a real-time in situ x-ray scattering study of the nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy on AlN(0001)/Si(111).	Aluminum	147-150	gigaxonin	Homo sapiens	82-85
19755728-3	2009	Based on scanning electron microscopy and electron microscopy analysis, it is proposed that the granular character of the thin AlN buffer layer may account for the easy plastic relaxation of GaN, establishing that three-dimensional islanding and plastic strain relaxation of GaN are two necessary conditions for nanowire growth.	Aluminum	127-130	gigaxonin	Homo sapiens	191-194
19755728-3	2009	Based on scanning electron microscopy and electron microscopy analysis, it is proposed that the granular character of the thin AlN buffer layer may account for the easy plastic relaxation of GaN, establishing that three-dimensional islanding and plastic strain relaxation of GaN are two necessary conditions for nanowire growth.	Aluminum	127-130	gigaxonin	Homo sapiens	275-278
19655727-5	2009	We believe that the general features observed here are equally applicable to other wurtzite nanostructures (ZnS, GaN) which are critical in optoelectronics, lasing, and piezotronic applications.	wurtzite	83-91	gigaxonin	Homo sapiens	113-116
21828531-6	2009	Epitaxial (In, Ga)N zinc-blende alloy grown on GaN(001) substrate is taken as an example to demonstrate the details of the method.	zinc-blende	20-31	gigaxonin	Homo sapiens	47-50
19928283-0	2009	Nitrogen ion induced 2D-GaN layer formation of GaAs (001) surface.	Nitrogen	0-8	gigaxonin	Homo sapiens	24-27
19928283-1	2009	This study demonstrates the formation of two-dimensional GaN on GaAs (001) surface by bombardment of nitrogen ions at room temperature.	Nitrogen	101-109	gigaxonin	Homo sapiens	57-60
19928283-7	2009	It is observed that Ga(3d) core level peak shifts during nitridation and N(1s) core level spectra shows that the intensity of the nitrogen peak increases and the Ga (LMM) auger peak shifts towards the higher binding energy, reveal the forming of N bonds with Ga by replacing the Ga-As bonds, forming GaN.	4-(2-(4-isopropylbenzamido)ethoxy)benzoic acid	73-78	gigaxonin	Homo sapiens	300-303
19928283-7	2009	It is observed that Ga(3d) core level peak shifts during nitridation and N(1s) core level spectra shows that the intensity of the nitrogen peak increases and the Ga (LMM) auger peak shifts towards the higher binding energy, reveal the forming of N bonds with Ga by replacing the Ga-As bonds, forming GaN.	Gallium	20-22	gigaxonin	Homo sapiens	300-303
21832611-1	2008	We investigated GaN-based heterostructures grown on three-dimensionally patterned Si(111) substrates by metal organic vapour phase epitaxy, with the goal of fabricating well controlled high quality, defect reduced GaN-based nanoLEDs.	Silicon	82-84	gigaxonin	Homo sapiens	16-19
19420534-0	2009	Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking.	zinc-blende	101-112	gigaxonin	Homo sapiens	32-35
19420534-1	2009	We report on the effect of Mg doping on the properties of GaN nanowires grown by plasma assisted molecular beam epitaxy.	Magnesium	27-29	gigaxonin	Homo sapiens	58-61
21832611-1	2008	We investigated GaN-based heterostructures grown on three-dimensionally patterned Si(111) substrates by metal organic vapour phase epitaxy, with the goal of fabricating well controlled high quality, defect reduced GaN-based nanoLEDs.	Metals	104-109	gigaxonin	Homo sapiens	16-19
19049088-1	2008	Vertically well-aligned high quality ZnO nanowires were grown on GaN epilayer on c-plane sapphire via a vapor-liquid-solid (VLS) process by introducing an Au thin film (3 nm) as a catalyst.	Zinc Oxide	37-40	gigaxonin	Homo sapiens	65-68
18825230-0	2008	Efficient visible laser emission of GaN laser diode pumped Pr-doped fluoride scheelite crystals.	fluoride scheelite	68-86	gigaxonin	Homo sapiens	36-39
18825230-3	2008	Exploiting the (3)P(2) absorption around 444 nm, we obtained efficient laser emission under GaN laser diode pumping on several transitions from the green to the near infrared wavelength range.	(3)p	15-19	gigaxonin	Homo sapiens	92-95
19049196-4	2008	The X-ray diffraction analysis shows that the crystalline size of pure ZnO is 36 nm and it is 41 nm while doped with 0.8 mol% of GaN due to best stoichiometry between Zn and O. Photoluminescence studies reveal that intense deep level emissions have been observed for pure ZnO and it has been suppressed for the GaN doped ZnO structures.	Zinc Oxide	71-74	gigaxonin	Homo sapiens	129-132
19049196-4	2008	The X-ray diffraction analysis shows that the crystalline size of pure ZnO is 36 nm and it is 41 nm while doped with 0.8 mol% of GaN due to best stoichiometry between Zn and O. Photoluminescence studies reveal that intense deep level emissions have been observed for pure ZnO and it has been suppressed for the GaN doped ZnO structures.	Zinc Oxide	71-74	gigaxonin	Homo sapiens	311-314
19049196-4	2008	The X-ray diffraction analysis shows that the crystalline size of pure ZnO is 36 nm and it is 41 nm while doped with 0.8 mol% of GaN due to best stoichiometry between Zn and O. Photoluminescence studies reveal that intense deep level emissions have been observed for pure ZnO and it has been suppressed for the GaN doped ZnO structures.	Zinc	71-73	gigaxonin	Homo sapiens	129-132
19049196-4	2008	The X-ray diffraction analysis shows that the crystalline size of pure ZnO is 36 nm and it is 41 nm while doped with 0.8 mol% of GaN due to best stoichiometry between Zn and O. Photoluminescence studies reveal that intense deep level emissions have been observed for pure ZnO and it has been suppressed for the GaN doped ZnO structures.	Zinc	71-73	gigaxonin	Homo sapiens	311-314
19049196-4	2008	The X-ray diffraction analysis shows that the crystalline size of pure ZnO is 36 nm and it is 41 nm while doped with 0.8 mol% of GaN due to best stoichiometry between Zn and O. Photoluminescence studies reveal that intense deep level emissions have been observed for pure ZnO and it has been suppressed for the GaN doped ZnO structures.	Zinc Oxide	272-275	gigaxonin	Homo sapiens	129-132
19049196-4	2008	The X-ray diffraction analysis shows that the crystalline size of pure ZnO is 36 nm and it is 41 nm while doped with 0.8 mol% of GaN due to best stoichiometry between Zn and O. Photoluminescence studies reveal that intense deep level emissions have been observed for pure ZnO and it has been suppressed for the GaN doped ZnO structures.	Zinc Oxide	272-275	gigaxonin	Homo sapiens	129-132
19049196-5	2008	The images of atomic force microscope show that the rms surface roughness is 27 nm for pure ZnO and the morphology is improved with decrease in rms roughness, 18 nm with fine crystallines while doped with 1 mol% GaN.	Zinc Oxide	92-95	gigaxonin	Homo sapiens	212-215
17417827-2	2007	In this work, we present the self-consistent charge density based functional tight binding (SCC-DFTB) calculation scheme including LDA+U like potentials and apply it for the simulation of RE-doped GaN.	dftb	96-100	gigaxonin	Homo sapiens	197-200
21730494-0	2007	Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal revealed by transmission electron microscopy and x-ray diffraction.	Indium	11-17	gigaxonin	Homo sapiens	36-39
21730494-0	2007	Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal revealed by transmission electron microscopy and x-ray diffraction.	Indium	11-17	gigaxonin	Homo sapiens	40-43
21730494-1	2007	We present transmission electron microscopy (TEM) and x-ray quantitative studies of the indium distribution in In(x)Ga(1-x)N/GaN multiple quantum wells (MQWs) with x = 0.1 and 0.18.	Indium	88-94	gigaxonin	Homo sapiens	125-128
18334354-4	2008	The results showed that the AlN/GaN/sapphire-layered structure SAW oscillators are suitable for visible blind UV detection and opened up the feasibility of developing remote UV sensors for different ranges of wavelengths on the III-nitrides.	iii-nitrides	228-240	gigaxonin	Homo sapiens	32-35
17417827-3	2007	DFTB parameters for the simulation of GaN and a selection of rare earth ions, where the f electrons were explicitly included in the valence, have been created.	dftb	0-4	gigaxonin	Homo sapiens	38-41
16952251-2	2006	GaN(0001) surfaces exposed to a hydrogen plasma will react with organic molecules bearing an alkene (C=C) group when illuminated with 254 nm light.	Hydrogen	32-40	gigaxonin	Homo sapiens	0-3
17302499-0	2007	Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n-type GaN.	Hydrogen	34-36	gigaxonin	Homo sapiens	106-109
17107161-1	2006	SiO(2) nanotubes with tunable diameters and lengths have been successfully synthesized via a simple in situ templatelike process by thermal evaporation of SiO, ZnS, and GaN in a vertical induction furnace.	Silicon Dioxide	0-6	gigaxonin	Homo sapiens	169-172
17107161-1	2006	SiO(2) nanotubes with tunable diameters and lengths have been successfully synthesized via a simple in situ templatelike process by thermal evaporation of SiO, ZnS, and GaN in a vertical induction furnace.	silicon monoxide	0-3	gigaxonin	Homo sapiens	169-172
17294493-0	2007	ZnO-nanowire-inserted GaN/ZnO heterojunction light-emitting diodes.	Zinc Oxide	0-3	gigaxonin	Homo sapiens	22-25
17100465-1	2006	Ab initio calculations show that (5,5) and (6,6) single-walled gallium nitride nanotubes (GaN NTs) in bundles could aggregate spontaneously to form new condensed phases when bundled tubes are close enough under hydrostatic pressure.	gallium nitride	63-78	gigaxonin	Homo sapiens	90-93
17100465-4	2006	These porous GaN phases possess tetrahedral bonding corresponding to sp(3) hybridization, different from sp(2) hybridized bonding in individual GaN NTs.	sp(3)	69-74	gigaxonin	Homo sapiens	13-16
16952251-2	2006	GaN(0001) surfaces exposed to a hydrogen plasma will react with organic molecules bearing an alkene (C=C) group when illuminated with 254 nm light.	Alkenes	93-99	gigaxonin	Homo sapiens	0-3
21727512-5	2006	The decrease in emission efficiency at high temperature is attributed to the activation of carriers from the GaN dot to the nitrogen vacancy (V(N)) state of the Al(0.11)Ga(0.89)N barrier layer.	Nitrogen	124-132	gigaxonin	Homo sapiens	109-112
16771564-1	2006	We present a study of the light extraction from CdSe/ZnS core/shell colloidal quantum dot thin films deposited on quantum well InGaN/GaN photonic crystal structures.	cdse	48-52	gigaxonin	Homo sapiens	129-132
16771564-1	2006	We present a study of the light extraction from CdSe/ZnS core/shell colloidal quantum dot thin films deposited on quantum well InGaN/GaN photonic crystal structures.	Zinc	53-56	gigaxonin	Homo sapiens	129-132
21727512-5	2006	The decrease in emission efficiency at high temperature is attributed to the activation of carriers from the GaN dot to the nitrogen vacancy (V(N)) state of the Al(0.11)Ga(0.89)N barrier layer.	Aluminum	161-163	gigaxonin	Homo sapiens	109-112
16853934-0	2005	Continuous hot electron generation in Pt/TiO2, Pd/TiO2, and Pt/GaN catalytic nanodiodes from oxidation of carbon monoxide.	Platinum	60-62	gigaxonin	Homo sapiens	63-66
16384500-0	2005	Role of defect sites and Ga polarization in the magnetism of Mn-doped GaN.	Gallium	25-27	gigaxonin	Homo sapiens	70-73
16853934-0	2005	Continuous hot electron generation in Pt/TiO2, Pd/TiO2, and Pt/GaN catalytic nanodiodes from oxidation of carbon monoxide.	nanodiodes	77-87	gigaxonin	Homo sapiens	63-66
16853934-0	2005	Continuous hot electron generation in Pt/TiO2, Pd/TiO2, and Pt/GaN catalytic nanodiodes from oxidation of carbon monoxide.	Carbon Monoxide	106-121	gigaxonin	Homo sapiens	63-66
16853934-1	2005	Thin films (&lt;10 nm) of platinum or palladium were deposited on TiO2 or GaN to form Schottky diodes.	Platinum	26-34	gigaxonin	Homo sapiens	74-77
16853934-1	2005	Thin films (&lt;10 nm) of platinum or palladium were deposited on TiO2 or GaN to form Schottky diodes.	Palladium	38-47	gigaxonin	Homo sapiens	74-77
16853934-2	2005	We detected and monitored the continuous electron flow across the metal-oxide interfaces of Pt/TiO2, Pd/TiO2, and Pt/GaN during the catalytic oxidation of carbon monoxide.	Metals	66-71	gigaxonin	Homo sapiens	117-120
16853934-2	2005	We detected and monitored the continuous electron flow across the metal-oxide interfaces of Pt/TiO2, Pd/TiO2, and Pt/GaN during the catalytic oxidation of carbon monoxide.	Oxides	72-77	gigaxonin	Homo sapiens	117-120
16853934-2	2005	We detected and monitored the continuous electron flow across the metal-oxide interfaces of Pt/TiO2, Pd/TiO2, and Pt/GaN during the catalytic oxidation of carbon monoxide.	Carbon Monoxide	155-170	gigaxonin	Homo sapiens	117-120
16090332-1	2005	Selected molecular beam epitaxy of zinc blende (111) or wurtzite (0001) GaN films on polar MgO(111) is achieved depending on whether N or Ga is deposited first.	Magnesium Oxide	91-94	gigaxonin	Homo sapiens	72-75
16277512-1	2005	A route to prepare nitrides, such as GaN, VN, and other nitrides, is reported.	nitrides	19-27	gigaxonin	Homo sapiens	37-40
16227972-5	2005	We present evidence that gigaxonin binds to the ubiquitin-activating enzyme E1 through its amino-terminal BTB domain, while the carboxy-terminal kelch repeat domain interacts directly with the light chain (LC) of microtubule-associated protein 1B (MAP1B).	btb	106-109	gigaxonin	Homo sapiens	25-34
16853609-1	2005	Surface-enhanced Raman spectroscopy (SERS) substrates have been prepared by depositing Au or Ag on porous GaN (PGaN).	sers	37-41	gigaxonin	Homo sapiens	106-109
16090332-3	2005	High-resolution transmission electron microscopy and density functional theory studies indicate that the atomically abrupt semiconducting GaN(111)/MgO(111) interface has a Mg-O-N-Ga stacking, where the N atom is bonded to O at a top site.	Magnesium Oxide	147-150	gigaxonin	Homo sapiens	138-141
16090332-3	2005	High-resolution transmission electron microscopy and density functional theory studies indicate that the atomically abrupt semiconducting GaN(111)/MgO(111) interface has a Mg-O-N-Ga stacking, where the N atom is bonded to O at a top site.	Magnesium	147-149	gigaxonin	Homo sapiens	138-141
12703795-1	2003	For the first time the synthesis of a porous gallium nitride material (GaN1.15H1.18O0.06C0.04) with narrow pore size distribution in the micropore regime using a nonylamine assisted sol-gel route is reported.	gallium nitride	45-60	gigaxonin	Homo sapiens	71-75
12639240-4	2003	As expected from its excitonic character, the near band edge emission intensity depends linearly (m = 1) in silicon doped GaN and superlinearly (m = 1.2) in undoped GaN on the electron beam current.	Silicon	108-115	gigaxonin	Homo sapiens	122-125
12703795-1	2003	For the first time the synthesis of a porous gallium nitride material (GaN1.15H1.18O0.06C0.04) with narrow pore size distribution in the micropore regime using a nonylamine assisted sol-gel route is reported.	1-nonylamine	162-172	gigaxonin	Homo sapiens	71-75
12147674-16	2002	The devastating axonal degeneration and neuronal death found in GAN patients point to the importance of gigaxonin for neuronal survival.	gigaxonin	104-113	gigaxonin	Homo sapiens	64-67
12516212-0	2002	Surface electromigration patterns in a confined adsorbed metal film: Ga on GaN.	Metals	57-62	gigaxonin	Homo sapiens	75-78
12516212-1	2002	The mass transport of gallium adatoms in a confined gallium bilayer on GaN(0001) is studied with photoelectron spectromicroscopy with the goal to identify the diffusing species and their lateral distribution during directional surface electromigration and/or "random" thermal diffusion.	Gallium	22-29	gigaxonin	Homo sapiens	71-74
12516212-1	2002	The mass transport of gallium adatoms in a confined gallium bilayer on GaN(0001) is studied with photoelectron spectromicroscopy with the goal to identify the diffusing species and their lateral distribution during directional surface electromigration and/or "random" thermal diffusion.	Gallium	52-59	gigaxonin	Homo sapiens	71-74
12398616-0	2002	Giant magnetic moments of nitrogen-doped Mn clusters and their relevance to ferromagnetism in Mn-doped GaN.	Nitrogen	26-34	gigaxonin	Homo sapiens	103-106
12190488-2	2002	It is, however, not recognized that the same amount of N can also qualitatively alter the electronic behavior of hydrogen: First-principles calculations reveal that, in GaAsN, a H atom bonds to N and can act as a donor in its own right, whereas in GaAs and GaN, H is amphoteric, causing passivation instead.	Nitrogen	55-56	gigaxonin	Homo sapiens	257-260
12190488-2	2002	It is, however, not recognized that the same amount of N can also qualitatively alter the electronic behavior of hydrogen: First-principles calculations reveal that, in GaAsN, a H atom bonds to N and can act as a donor in its own right, whereas in GaAs and GaN, H is amphoteric, causing passivation instead.	Hydrogen	113-121	gigaxonin	Homo sapiens	257-260
12627898-2	2003	Because GaN is typically grown on a non-native substrate and also forms a wurtzite crystal structure, a cryogenic cleaving technique was developed to generate smooth surfaces.	wurtzite	74-82	gigaxonin	Homo sapiens	8-11
11062483-7	2000	Gigaxonin is composed of an amino-terminal BTB (for Broad-Complex, Tramtrack and Bric a brac) domain followed by a six kelch repeats, which are predicted to adopt a beta-propeller shape.	btb	43-46	gigaxonin	Homo sapiens	0-9
11136101-0	2001	Homogeneous Strain Deformation Path for the Wurtzite to Rocksalt High-Pressure Phase Transition in GaN.	wurtzite	44-52	gigaxonin	Homo sapiens	99-102
11849073-4	2002	High-temperature association processes in the gas phase during the CVD of GaN from the Cl(3)GaNH(3) adduct are predicted to be less important, in contrast to previous findings for the aluminum analogue.	Aluminum	184-192	gigaxonin	Homo sapiens	74-77
18253292-0	1997	Raman scattering as a characterization tool for epitaxial GaN thin films grown on sapphire by turbo disk metal-organic chemical vapor deposition.	Metals	105-110	gigaxonin	Homo sapiens	58-61
11196773-5	2000	The reaction of 1 and 2 with LiGaH4 yields [(CH3)HGaN3]x, which is a new low-temperature source of GaN.	ligah4	29-35	gigaxonin	Homo sapiens	50-53
10978008-0	2000	Observation of "Ghost" islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy We observe "ghost" islands formed on terraces during homoepitaxial nucleation of GaN.	Gallium	64-71	gigaxonin	Homo sapiens	85-88
10978008-0	2000	Observation of "Ghost" islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy We observe "ghost" islands formed on terraces during homoepitaxial nucleation of GaN.	Gallium	64-71	gigaxonin	Homo sapiens	203-206
10005643-0	1993	Electronic and structural properties of GaN by the full-potential linear muffin-tin orbitals method: The role of the d electrons.	muffin-tin	73-83	gigaxonin	Homo sapiens	40-43
8635201-6	1996	After depolymerization of microtubules with nocodazole, all fibroblasts from GAN patients contained a vimentin aggregate which seemed to arise from a subpopulation of vimentin filaments normally integrated in the vimentin network.	Nocodazole	44-54	gigaxonin	Homo sapiens	77-80
7834318-1	1994	The magic-angle turning (MAT) experiment introduced by Gan is developed into a powerful and routine method for measuring the principal values of 13C chemical shift tensors in powdered solids.	13c	145-148	gigaxonin	Homo sapiens	55-58
2324766-0	1990	Giant axonal neuropathy: studies with sulfhydryl donor compounds.	Sulfhydryl Compounds	38-48	gigaxonin	Homo sapiens	0-23
2324766-3	1990	We report, in GAN fibroblasts, inhibition of vimentin filament aggregation by dithiothreitol and penicillamine, sulfhydryl donor compounds which stabilize thiols.	Dithiothreitol	78-92	gigaxonin	Homo sapiens	14-17
2324766-3	1990	We report, in GAN fibroblasts, inhibition of vimentin filament aggregation by dithiothreitol and penicillamine, sulfhydryl donor compounds which stabilize thiols.	Penicillamine	97-110	gigaxonin	Homo sapiens	14-17
2324766-3	1990	We report, in GAN fibroblasts, inhibition of vimentin filament aggregation by dithiothreitol and penicillamine, sulfhydryl donor compounds which stabilize thiols.	Sulfhydryl Compounds	112-122	gigaxonin	Homo sapiens	14-17
2324766-3	1990	We report, in GAN fibroblasts, inhibition of vimentin filament aggregation by dithiothreitol and penicillamine, sulfhydryl donor compounds which stabilize thiols.	Sulfhydryl Compounds	155-161	gigaxonin	Homo sapiens	14-17
2324766-4	1990	In addition, we describe clinical improvement in a GAN patient treated with penicillamine, despite earlier progressive disease.	Penicillamine	76-89	gigaxonin	Homo sapiens	51-54
2324766-5	1990	These findings support the hypothesis of disordered thiol metabolism in GAN, and open up avenues for further research.	Sulfhydryl Compounds	52-57	gigaxonin	Homo sapiens	72-75
34772058-0	2021	DFT-Based Studies on Carbon Adsorption on the wz-GaN Surfaces and the Influence of Point Defects on the Stability of the Diamond-GaN Interfaces.	Carbon	21-27	gigaxonin	Homo sapiens	49-52
33944799-1	2021	Binary III-V nitrides such as AlN, GaN and InN in the wurtzite-type structure have long been considered as potent semiconducting materials because of their optoelectronic properties, amongst others.	nitrides	13-21	gigaxonin	Homo sapiens	35-38
33944799-1	2021	Binary III-V nitrides such as AlN, GaN and InN in the wurtzite-type structure have long been considered as potent semiconducting materials because of their optoelectronic properties, amongst others.	wurtzite	54-62	gigaxonin	Homo sapiens	35-38
34914401-2	2021	On the basis of first-principles calculation, we revealed that a two-dimensional gallium nitride (2D-GaN), which was recently synthesized between graphene and SiC or wurtzite GaN substrate, exhibits half-metallicity due to its half-filled quasi-flat band.	gallium nitride	81-96	gigaxonin	Homo sapiens	101-104
34914401-2	2021	On the basis of first-principles calculation, we revealed that a two-dimensional gallium nitride (2D-GaN), which was recently synthesized between graphene and SiC or wurtzite GaN substrate, exhibits half-metallicity due to its half-filled quasi-flat band.	gallium nitride	81-96	gigaxonin	Homo sapiens	175-178
34914401-2	2021	On the basis of first-principles calculation, we revealed that a two-dimensional gallium nitride (2D-GaN), which was recently synthesized between graphene and SiC or wurtzite GaN substrate, exhibits half-metallicity due to its half-filled quasi-flat band.	Graphite	146-154	gigaxonin	Homo sapiens	101-104
34914401-2	2021	On the basis of first-principles calculation, we revealed that a two-dimensional gallium nitride (2D-GaN), which was recently synthesized between graphene and SiC or wurtzite GaN substrate, exhibits half-metallicity due to its half-filled quasi-flat band.	sic	159-162	gigaxonin	Homo sapiens	101-104
34914401-2	2021	On the basis of first-principles calculation, we revealed that a two-dimensional gallium nitride (2D-GaN), which was recently synthesized between graphene and SiC or wurtzite GaN substrate, exhibits half-metallicity due to its half-filled quasi-flat band.	wurtzite	166-174	gigaxonin	Homo sapiens	101-104
34914401-2	2021	On the basis of first-principles calculation, we revealed that a two-dimensional gallium nitride (2D-GaN), which was recently synthesized between graphene and SiC or wurtzite GaN substrate, exhibits half-metallicity due to its half-filled quasi-flat band.	wurtzite	166-174	gigaxonin	Homo sapiens	175-178
34914401-6	2021	Our simulation estimated its Curie temperature (TC) to be ~165 K under a weak external magnetic field, suggesting that transition metal-free 2D-GaN exhibiting p orbital-based half-metallicity can be utilized in future spintronics.	Metals	130-135	gigaxonin	Homo sapiens	144-147
34947484-1	2021	In the past years, light-emitting diodes (LED) made of GaN and its related ternary compounds with indium and aluminium have become an enabling technology in all areas of lighting.	Indium	98-104	gigaxonin	Homo sapiens	55-58
34947484-1	2021	In the past years, light-emitting diodes (LED) made of GaN and its related ternary compounds with indium and aluminium have become an enabling technology in all areas of lighting.	Aluminum	109-118	gigaxonin	Homo sapiens	55-58
33803174-0	2021	Nitrogen Dissolution in Liquid Ga and Fe: Comprehensive Ab Initio Analysis, Relevance for Crystallization of GaN.	Nitrogen	0-8	gigaxonin	Homo sapiens	109-112
33803174-0	2021	Nitrogen Dissolution in Liquid Ga and Fe: Comprehensive Ab Initio Analysis, Relevance for Crystallization of GaN.	Gallium	31-33	gigaxonin	Homo sapiens	109-112
33803174-0	2021	Nitrogen Dissolution in Liquid Ga and Fe: Comprehensive Ab Initio Analysis, Relevance for Crystallization of GaN.	Iron	38-40	gigaxonin	Homo sapiens	109-112
33803174-12	2021	It indicates that liquid Fe could be a prospective solvent for GaN crystallization from metallic solutions.	Iron	25-27	gigaxonin	Homo sapiens	63-66
33233685-3	2020	In this paper, we investigate the carrier recombination mechanism of GaN/AlN dot-in-nanowires with an in situ grown AlN shell structure.	aln	116-119	gigaxonin	Homo sapiens	69-72
34811457-1	2021	We report on morphology-controlled remote epitaxy via hydrothermal growth of ZnO micro- and nanostructure crystals on graphene-coated GaN substrate.	Zinc Oxide	77-80	gigaxonin	Homo sapiens	134-137
34811457-1	2021	We report on morphology-controlled remote epitaxy via hydrothermal growth of ZnO micro- and nanostructure crystals on graphene-coated GaN substrate.	Graphite	118-126	gigaxonin	Homo sapiens	134-137
34811457-3	2021	Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene.	Zinc Oxide	23-26	gigaxonin	Homo sapiens	73-76
34811457-3	2021	Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene.	Zinc Oxide	23-26	gigaxonin	Homo sapiens	258-261
34811457-3	2021	Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene.	Graphite	57-65	gigaxonin	Homo sapiens	73-76
34811457-3	2021	Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene.	Graphite	57-65	gigaxonin	Homo sapiens	258-261
34811457-3	2021	Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene.	Zinc Oxide	133-136	gigaxonin	Homo sapiens	73-76
34811457-3	2021	Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene.	Zinc Oxide	133-136	gigaxonin	Homo sapiens	194-197
34811457-3	2021	Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene.	Zinc Oxide	133-136	gigaxonin	Homo sapiens	258-261
34811457-3	2021	Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene.	Zinc Oxide	167-170	gigaxonin	Homo sapiens	194-197
34811457-3	2021	Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene.	Zinc Oxide	167-170	gigaxonin	Homo sapiens	258-261
34811457-3	2021	Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene.	Graphite	185-193	gigaxonin	Homo sapiens	194-197
34811457-3	2021	Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene.	Graphite	185-193	gigaxonin	Homo sapiens	258-261
34811457-3	2021	Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene.	Zinc Oxide	250-253	gigaxonin	Homo sapiens	73-76
34811457-3	2021	Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene.	Zinc Oxide	250-253	gigaxonin	Homo sapiens	194-197
34811457-3	2021	Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene.	Zinc Oxide	250-253	gigaxonin	Homo sapiens	258-261
34811457-3	2021	Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene.	Graphite	269-277	gigaxonin	Homo sapiens	194-197
34811457-3	2021	Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene.	Graphite	269-277	gigaxonin	Homo sapiens	258-261
34772058-0	2021	DFT-Based Studies on Carbon Adsorption on the wz-GaN Surfaces and the Influence of Point Defects on the Stability of the Diamond-GaN Interfaces.	Carbon	21-27	gigaxonin	Homo sapiens	129-132
34772058-0	2021	DFT-Based Studies on Carbon Adsorption on the wz-GaN Surfaces and the Influence of Point Defects on the Stability of the Diamond-GaN Interfaces.	Diamond	121-128	gigaxonin	Homo sapiens	129-132
34772058-5	2021	Following this, a model of diamond-GaN heterojunction with the growth direction (111) was constructed based on carbon adsorption results on GaN{0001} surfaces.	Carbon	111-117	gigaxonin	Homo sapiens	35-38
34772058-5	2021	Following this, a model of diamond-GaN heterojunction with the growth direction (111) was constructed based on carbon adsorption results on GaN{0001} surfaces.	Carbon	111-117	gigaxonin	Homo sapiens	140-143
34585691-5	2021	The results show that hydrogenation will slightly increase the thermal conductivity of the GaN monolayer from 70.62 Wm-1 K-1 to 76.23 Wm-1 K-1 at 300 K. The little effect of hydrogenation on thermal conductivity is mainly dominated by two competing factors: (1) the reduction of ZA mode lifetime due to the breaking of reflection symmetry after hydrogenation and (2) the increased contribution from TA and LA modes due to the reduction of anharmonic scattering caused by the enlarged phonon bandgap after hydrogenation.	Tantalum	399-401	gigaxonin	Homo sapiens	91-94
34669088-10	2021	This paper for the first time presents the comprehensive TCAD study of surface donor and analysis of electron concentration in the channel and 2DEG formation at AlGaN-GaN interface.	2deg	143-147	gigaxonin	Homo sapiens	167-170
34669088-10	2021	This paper for the first time presents the comprehensive TCAD study of surface donor and analysis of electron concentration in the channel and 2DEG formation at AlGaN-GaN interface.	aluminum gallium nitride	161-166	gigaxonin	Homo sapiens	167-170
34832708-4	2021	Using the verified model, the impact of carbon doping concentration in the buffer and the thickness of the unintentionally doped (UID) GaN channel in the transient behavior was estimated.	Carbon	40-46	gigaxonin	Homo sapiens	135-138
34683502-4	2021	However, the disadvantage of the nitridation treatment is the fact that the GaN thin layer causes an inhomogeneous barrier height.	nitridation	33-44	gigaxonin	Homo sapiens	76-79
33875111-0	2021	Plasmon-Enhanced Ultraviolet Photoluminescence from the Graphene/GaN Nanofilm.	Graphite	56-64	gigaxonin	Homo sapiens	65-68
34547735-0	2021	Ag-decorated GaN for high-efficiency photoreduction of carbon dioxide into tunable syngas under visible light.	Carbon Dioxide	55-69	gigaxonin	Homo sapiens	13-16
34547735-3	2021	For this case, we here design a hybrid catalyst, synthesized by in-situ deposition of Ag crystals on GaN nanobelts, that delivers a tunable H2/CO ratio between 0.5 and 3 under visible light irradiation (lambda > 400 nm).	Deuterium	140-142	gigaxonin	Homo sapiens	101-104
34547735-3	2021	For this case, we here design a hybrid catalyst, synthesized by in-situ deposition of Ag crystals on GaN nanobelts, that delivers a tunable H2/CO ratio between 0.5 and 3 under visible light irradiation (lambda > 400 nm).	Carbon Monoxide	143-145	gigaxonin	Homo sapiens	101-104
33875111-2	2021	Herein, a hybrid structure of graphene/GaN nanofilm was designed and fabricated to investigate the photoluminescence (PL) performance and the coupling dynamics.	Graphite	30-38	gigaxonin	Homo sapiens	39-42
33875111-3	2021	It is demonstrated that the resonant coupling between graphene SPs and GaN exciton emission is responsible for the substantially enhanced PL from the structure of graphene/GaN nanofilm.	graphene sps	54-66	gigaxonin	Homo sapiens	71-74
33875111-3	2021	It is demonstrated that the resonant coupling between graphene SPs and GaN exciton emission is responsible for the substantially enhanced PL from the structure of graphene/GaN nanofilm.	graphene sps	54-66	gigaxonin	Homo sapiens	172-175
33875111-3	2021	It is demonstrated that the resonant coupling between graphene SPs and GaN exciton emission is responsible for the substantially enhanced PL from the structure of graphene/GaN nanofilm.	pl	138-140	gigaxonin	Homo sapiens	71-74
33875111-3	2021	It is demonstrated that the resonant coupling between graphene SPs and GaN exciton emission is responsible for the substantially enhanced PL from the structure of graphene/GaN nanofilm.	pl	138-140	gigaxonin	Homo sapiens	172-175
33875111-3	2021	It is demonstrated that the resonant coupling between graphene SPs and GaN exciton emission is responsible for the substantially enhanced PL from the structure of graphene/GaN nanofilm.	Graphite	163-171	gigaxonin	Homo sapiens	71-74
33875111-3	2021	It is demonstrated that the resonant coupling between graphene SPs and GaN exciton emission is responsible for the substantially enhanced PL from the structure of graphene/GaN nanofilm.	Graphite	163-171	gigaxonin	Homo sapiens	172-175
34399419-2	2021	We investigate the role of the main air constituents nitrogen, oxygen and water on the efficiency of radiative recombination in GaN nanostructures as a function of different surface treatments and at temperatures up to 200 C. Oxygen and water exposures exhibit a complex behavior as they can both act quenching and enhancing on the photoluminescence intensity dependent on the temperature.	Nitrogen	53-61	gigaxonin	Homo sapiens	128-131
34684994-1	2021	Monolayer (ML)-scale GaN/AlN multiple quantum well (MQW) structures for electron-beam-pumped ultraviolet (UV) emitters are grown on c-sapphire substrates by using plasma-assisted molecular beam epitaxy under controllable metal-rich conditions, which provides the spiral growth of densely packed atomically smooth hillocks without metal droplets.	Metals	221-226	gigaxonin	Homo sapiens	21-24
34399419-2	2021	We investigate the role of the main air constituents nitrogen, oxygen and water on the efficiency of radiative recombination in GaN nanostructures as a function of different surface treatments and at temperatures up to 200 C. Oxygen and water exposures exhibit a complex behavior as they can both act quenching and enhancing on the photoluminescence intensity dependent on the temperature.	Oxygen	63-69	gigaxonin	Homo sapiens	128-131
34399419-2	2021	We investigate the role of the main air constituents nitrogen, oxygen and water on the efficiency of radiative recombination in GaN nanostructures as a function of different surface treatments and at temperatures up to 200 C. Oxygen and water exposures exhibit a complex behavior as they can both act quenching and enhancing on the photoluminescence intensity dependent on the temperature.	Water	74-79	gigaxonin	Homo sapiens	128-131
34399419-2	2021	We investigate the role of the main air constituents nitrogen, oxygen and water on the efficiency of radiative recombination in GaN nanostructures as a function of different surface treatments and at temperatures up to 200 C. Oxygen and water exposures exhibit a complex behavior as they can both act quenching and enhancing on the photoluminescence intensity dependent on the temperature.	Oxygen	226-232	gigaxonin	Homo sapiens	128-131
34399419-2	2021	We investigate the role of the main air constituents nitrogen, oxygen and water on the efficiency of radiative recombination in GaN nanostructures as a function of different surface treatments and at temperatures up to 200 C. Oxygen and water exposures exhibit a complex behavior as they can both act quenching and enhancing on the photoluminescence intensity dependent on the temperature.	Water	237-242	gigaxonin	Homo sapiens	128-131
34540143-2	2022	In this work, we reveal, that the linear model based on the experimental data limited to within a small range of biaxial strains (< 0.2%), which is widely used for the non-destructive Raman study of strain with nanometer-scale spatial resolution is not valid for the binary wurtzite-structure group-III nitrides GaN and AlN.	wurtzite	274-282	gigaxonin	Homo sapiens	312-315
34540143-2	2022	In this work, we reveal, that the linear model based on the experimental data limited to within a small range of biaxial strains (< 0.2%), which is widely used for the non-destructive Raman study of strain with nanometer-scale spatial resolution is not valid for the binary wurtzite-structure group-III nitrides GaN and AlN.	nitrides	303-311	gigaxonin	Homo sapiens	312-315
34614706-0	2021	Is a thin p-GaN layer possible for making high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes?	aluminum gallium nitride	58-63	gigaxonin	Homo sapiens	12-15
34614706-1	2021	In this report, we investigate the impact of a thin p-GaN layer on the efficiency for AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs).	aluminum gallium nitride	86-91	gigaxonin	Homo sapiens	54-57
34614706-2	2021	According to our results, the light extraction efficiency (LEE) becomes higher with the decrease of the p-GaN layer thickness, which can be ascribed to the decreased absorption of DUV emission by the thin p-GaN layer.	DUV	180-183	gigaxonin	Homo sapiens	106-109
34614776-0	2021	Enhancing the light extraction efficiency for AlGaN-based DUV LEDs with a laterally over-etched p-GaN layer at the top of truncated cones.	aluminum gallium nitride	46-51	gigaxonin	Homo sapiens	98-101
34614776-2	2021	In this work, the air-cavity-shaped inclined sidewall is applied and the p-GaN layer at the top of the truncated cone is laterally over-etched so that more light escape paths are generated for AlGaN-based DUV LEDs.	aluminum gallium nitride	193-198	gigaxonin	Homo sapiens	75-78
34504143-0	2021	Smart-cut-like laser slicing of GaN substrate using its own nitrogen.	Nitrogen	60-68	gigaxonin	Homo sapiens	32-35
34614706-2	2021	According to our results, the light extraction efficiency (LEE) becomes higher with the decrease of the p-GaN layer thickness, which can be ascribed to the decreased absorption of DUV emission by the thin p-GaN layer.	DUV	180-183	gigaxonin	Homo sapiens	207-210
34614706-4	2021	Therefore, we can speculate that high-efficiency DUV LEDs can be achieved by using thin p-GaN layer to increase the LEE.	DUV	49-52	gigaxonin	Homo sapiens	90-93
34615157-2	2021	A hybrid nucleation layer, which includes sputtered AlN and mid-temperature GaN components, was proposed for the development of efficient III-nitride emitters in the green-to-amber region.	iii-nitride	138-149	gigaxonin	Homo sapiens	76-79
34501025-3	2021	It is therefore proven that the difference in Berry phase spontaneous polarization for bulk nitrides (AlN, GaN and InN) obtained by Bernardini et al.	nitrides	92-100	gigaxonin	Homo sapiens	107-110
34310869-6	2021	The corresponding photon energy in GaN, AlN, and AlGaN lies within the optimal range for transfer in optical fiber, thereby render the charge-neutral cation vacancy in wide-bandgap III-nitrides as a promising single-photon emitter for quantum information applications.	iii-nitrides	181-193	gigaxonin	Homo sapiens	35-38
34259497-1	2021	Low turn-on (knee) voltage (~0.3 V) Schottky-diode behavior of a four-layer (4L) MoS2/GaN junction is achieved by optimizing the in situ interface preparation of the GaN substrate prior to MoS2 overlayer growth in a vacuum system using metallic molybdenum and hydrogen sulfide gas as precursors.	Molybdenum	245-255	gigaxonin	Homo sapiens	86-89
34313418-6	2021	The Mg doping concentration and distribution profile of the p++-GaN shell were inspected using three-dimensional atom probe tomography.	Magnesium	4-6	gigaxonin	Homo sapiens	64-67
34313418-9	2021	Excluding the Mg atoms contained in the clusters, the remaining Mg doping concentration in the p++-GaN region was calculated to be 1.1 x 1020 cm-3.	Magnesium	64-66	gigaxonin	Homo sapiens	99-102
34613168-3	2021	Here, we provide a systematic study on the temperature-dependent dielectric functions of GaN grown by metal-organic chemical vapor deposition in the spectral range of 0.73-5.90 eV via spectroscopic ellipsometry experiments and first-principles calculations.	Metals	102-107	gigaxonin	Homo sapiens	89-92
34613168-8	2021	While doping GaN with Fe or Si elements, the introduced free carriers modify the electronic interband transition.	Iron	22-24	gigaxonin	Homo sapiens	13-16
34613168-8	2021	While doping GaN with Fe or Si elements, the introduced free carriers modify the electronic interband transition.	Silicon	28-30	gigaxonin	Homo sapiens	13-16
34259497-2	2021	The process leads to a clean nitrogen-terminated GaN surface that bonds well to the MoS2 film revealing a 2 x 2 reconstruction at the interface observed in low-energy electron diffraction (LEED).	Nitrogen	29-37	gigaxonin	Homo sapiens	49-52
34201620-2	2021	The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-based III-V device manufacturing process.	Gold	129-131	gigaxonin	Homo sapiens	4-7
34069925-5	2021	In addition, NH2- produced via the auto coupling ionization of NH3 has strong nucleophilic ability, and is able to fill nitrogen vacancies near the GaN surface created by high temperature process.	Amido radical	13-16	gigaxonin	Homo sapiens	148-151
34206818-3	2021	The key parameters for the precise tuning of threshold voltage (Vth) in GaN transistors are the control of the positive fixed charges -5 x 1012 cm-2, donor-like traps -3 x 1013 cm-2 at the nitride/GaN interfaces, the energy of the donor-like traps 1.42 eV below the conduction band and the acceptor traps activation energy in the AlGaN layer and buffer regions with 0.59 eV below the conduction band.	nitride	189-196	gigaxonin	Homo sapiens	72-75
34206818-3	2021	The key parameters for the precise tuning of threshold voltage (Vth) in GaN transistors are the control of the positive fixed charges -5 x 1012 cm-2, donor-like traps -3 x 1013 cm-2 at the nitride/GaN interfaces, the energy of the donor-like traps 1.42 eV below the conduction band and the acceptor traps activation energy in the AlGaN layer and buffer regions with 0.59 eV below the conduction band.	nitride	189-196	gigaxonin	Homo sapiens	197-200
34206818-3	2021	The key parameters for the precise tuning of threshold voltage (Vth) in GaN transistors are the control of the positive fixed charges -5 x 1012 cm-2, donor-like traps -3 x 1013 cm-2 at the nitride/GaN interfaces, the energy of the donor-like traps 1.42 eV below the conduction band and the acceptor traps activation energy in the AlGaN layer and buffer regions with 0.59 eV below the conduction band.	aluminum gallium nitride	330-335	gigaxonin	Homo sapiens	72-75
34069925-5	2021	In addition, NH2- produced via the auto coupling ionization of NH3 has strong nucleophilic ability, and is able to fill nitrogen vacancies near the GaN surface created by high temperature process.	Ammonia	63-66	gigaxonin	Homo sapiens	148-151
34069925-5	2021	In addition, NH2- produced via the auto coupling ionization of NH3 has strong nucleophilic ability, and is able to fill nitrogen vacancies near the GaN surface created by high temperature process.	Nitrogen	120-128	gigaxonin	Homo sapiens	148-151
35457894-3	2022	The surface morphology after p-GaN etching was characterized by AFM for both selective and nonselective processes, showing the exposed AlGaN surface RMS values of 0.43 nm and 0.99 nm, respectively.	aluminum gallium nitride	135-140	gigaxonin	Homo sapiens	31-34
35588269-0	2022	On the Role of Amides and Imides for Understanding GaN Syntheses from Ammonia Solution: Molecular Mechanics Models of Ammonia, Amide and Imide Interactions with Gallium Nitride.	Ammonia	118-125	gigaxonin	Homo sapiens	51-54
35588269-0	2022	On the Role of Amides and Imides for Understanding GaN Syntheses from Ammonia Solution: Molecular Mechanics Models of Ammonia, Amide and Imide Interactions with Gallium Nitride.	Amides	127-132	gigaxonin	Homo sapiens	51-54
35588269-0	2022	On the Role of Amides and Imides for Understanding GaN Syntheses from Ammonia Solution: Molecular Mechanics Models of Ammonia, Amide and Imide Interactions with Gallium Nitride.	Imides	137-142	gigaxonin	Homo sapiens	51-54
35588269-0	2022	On the Role of Amides and Imides for Understanding GaN Syntheses from Ammonia Solution: Molecular Mechanics Models of Ammonia, Amide and Imide Interactions with Gallium Nitride.	gallium nitride	161-176	gigaxonin	Homo sapiens	51-54
35588269-1	2022	A key requisite to characterizing GaN precipitation from ammonia solution from molecular simulations is the availability of reliable molecular mechanics models for the interactions of gallium ions with NH3 , NH2 - , and NH2- species, respectively.	Ammonia	57-64	gigaxonin	Homo sapiens	34-37
35588269-1	2022	A key requisite to characterizing GaN precipitation from ammonia solution from molecular simulations is the availability of reliable molecular mechanics models for the interactions of gallium ions with NH3 , NH2 - , and NH2- species, respectively.	Gallium	184-191	gigaxonin	Homo sapiens	34-37
35588269-2	2022	Here, we present a tailor-made force field which is fully compatible to an earlier developed GaN model, thus bridging the analyses of Ga3+ ions in ammonia solution with the aggregation of (Gax (NH)y (NH2 )z )+3x-2y-z precursors and the modelling of GaN crystals.	Ammonia	147-154	gigaxonin	Homo sapiens	93-96
35629563-3	2022	By means of using the EC etching technique, the n++-layers can be converted into nanoporous (NP) layers whilst the undoped GaN remains intact, leading to a significantly high contrast in refractive index between NP-layer and undoped GaN and thus forming a DBR.	Nitrogen	48-49	gigaxonin	Homo sapiens	233-236
35387996-6	2022	Wafer-scale epilayer transfer and the bond-before-pattern technique were used to directly integrate 5-microm-scale GaN LED arrays on a foreign silicon substrate.	Silicon	143-150	gigaxonin	Homo sapiens	115-118
33500065-1	2021	An overview is given of the many applications that nm-thin pure boron (PureB) layers can have when deposited on semiconductors such as Si, Ge, and GaN.	Boron	64-69	gigaxonin	Homo sapiens	147-150
35425011-2	2022	Recently, a few nanometers thick m-Gd2O3 thin film has been successfully epitaxially grown on a GaN substrate as a promising candidate gate oxide in metal-oxide-semiconductor field-effect transistors (MOSFETs).	oxo(oxogadoliniooxy)gadolinium	35-40	gigaxonin	Homo sapiens	96-99
35167528-0	2022	Enhanced performance of an AlGaN-based deep ultraviolet light-emitting diode using a p+-GaN/SiO2/ITO tunnel junction.	aluminum gallium nitride	27-32	gigaxonin	Homo sapiens	88-91
35167528-0	2022	Enhanced performance of an AlGaN-based deep ultraviolet light-emitting diode using a p+-GaN/SiO2/ITO tunnel junction.	Silicon Dioxide	92-96	gigaxonin	Homo sapiens	88-91
35167528-1	2022	In this work, a 280-nm-wavelength deep-ultraviolet light-emitting diode (DUV LED) with a p+-GaN/SiO2/ITO tunnel junction is fabricated and investigated.	Silicon Dioxide	96-100	gigaxonin	Homo sapiens	92-95
35208364-0	2022	Resonant Raman Scattering in Boron-Implanted GaN.	Boron	29-34	gigaxonin	Homo sapiens	45-48
35056300-1	2022	Despite the superior working properties, GaN-based HEMTs and systems are still confronted with the threat of a transient ESD event, especially for the vulnerable gate structure of the p-GaN or MOS HEMTs.	hemts	51-56	gigaxonin	Homo sapiens	41-44
35056300-1	2022	Despite the superior working properties, GaN-based HEMTs and systems are still confronted with the threat of a transient ESD event, especially for the vulnerable gate structure of the p-GaN or MOS HEMTs.	hemts	51-56	gigaxonin	Homo sapiens	186-189
35057371-3	2022	Due to the depletion effect assisted by the p-GaN gate part, the VTH of HG-UTB HEMTs can be significantly increased.	hg-utb hemts	72-84	gigaxonin	Homo sapiens	46-49
35057196-0	2022	Modeling of the Point Defect Migration across the AlN/GaN Interfaces-Ab Initio Study.	aln	50-53	gigaxonin	Homo sapiens	54-57
35057196-1	2022	The formation and diffusion of point defects have a detrimental impact on the functionality of devices in which a high quality AlN/GaN heterointerface is required.	aln	127-130	gigaxonin	Homo sapiens	131-134
35057196-4	2022	Three diffusion mechanisms, that is, the vacancy mediated, direct interstitial, and indirect ones, in bulk AlN and GaN crystals, as well at the AlN/GaN heterointerface, were taken into account.	aln	144-147	gigaxonin	Homo sapiens	148-151
35057196-6	2022	Additionally, we demonstrated the effect of the inversion of the electric field in the presence of charged point defects VGa3- and VAl3- at the AlN/GaN heterointerface, not reported so far.	aln	144-147	gigaxonin	Homo sapiens	148-151
3691945-8	1987	Microsequencing of tryptic peptide T13a shows the allotypic variant, inv b+, of Bence-Jones proteins TRA and GAN.	Peptides	27-34	gigaxonin	Homo sapiens	109-112
35208294-1	2022	In this study, the breakdown behavior of a calibrated depletion mode AlGaN/GaN transistor with a nitrogen-implanted gate region was simulated and analyzed using Sentaurus TCAD simulation, with particular emphasis on the metal contact design rule for a GaN-based high-electron-mobility transistor (HEMT) device with a variety of 2DEG concentrations grown on a silicon substrate.	Nitrogen	97-105	gigaxonin	Homo sapiens	75-78
35208294-1	2022	In this study, the breakdown behavior of a calibrated depletion mode AlGaN/GaN transistor with a nitrogen-implanted gate region was simulated and analyzed using Sentaurus TCAD simulation, with particular emphasis on the metal contact design rule for a GaN-based high-electron-mobility transistor (HEMT) device with a variety of 2DEG concentrations grown on a silicon substrate.	Nitrogen	97-105	gigaxonin	Homo sapiens	252-255
35208294-1	2022	In this study, the breakdown behavior of a calibrated depletion mode AlGaN/GaN transistor with a nitrogen-implanted gate region was simulated and analyzed using Sentaurus TCAD simulation, with particular emphasis on the metal contact design rule for a GaN-based high-electron-mobility transistor (HEMT) device with a variety of 2DEG concentrations grown on a silicon substrate.	Metals	220-225	gigaxonin	Homo sapiens	75-78
35208294-1	2022	In this study, the breakdown behavior of a calibrated depletion mode AlGaN/GaN transistor with a nitrogen-implanted gate region was simulated and analyzed using Sentaurus TCAD simulation, with particular emphasis on the metal contact design rule for a GaN-based high-electron-mobility transistor (HEMT) device with a variety of 2DEG concentrations grown on a silicon substrate.	Metals	220-225	gigaxonin	Homo sapiens	252-255
35208294-6	2022	When the contact position was far away from the AlGaN/GaN, the breakdown voltage of the nitrogen-implanted gated device decreased by 41% because of the relatively low electron density and weak induced piezoelectric effect.	Nitrogen	88-96	gigaxonin	Homo sapiens	54-57
35208294-9	2022	The simulated AlGaN/GaN device exhibits different breakdown behaviors at different metal contact positions in the drain.	Metals	83-88	gigaxonin	Homo sapiens	20-23
35018953-3	2022	This work demonstrates a truncated pyramid nanostructure with fine-tuned multiple facets in an (AlN)8/(GaN)2 digital alloy to achieve highly efficient DUV emission at 234 nm.	DUV	151-154	gigaxonin	Homo sapiens	103-106
33908251-7	2021	Therefore, the utilization of a 2DEG layer in transferrable AlGaN/GaN heterostructure membranes offers great promises for high performance flexible 2DEG-IPDs for advanced UV detection systems that are critically important in myriad biomedical and environmental applications.	2deg	32-36	gigaxonin	Homo sapiens	62-65
33908251-7	2021	Therefore, the utilization of a 2DEG layer in transferrable AlGaN/GaN heterostructure membranes offers great promises for high performance flexible 2DEG-IPDs for advanced UV detection systems that are critically important in myriad biomedical and environmental applications.	2deg	148-152	gigaxonin	Homo sapiens	62-65
33925717-4	2021	The strength of the SP-QW coupling is mainly influenced by the type of metal used for SP enhancement, the metal nanostructure geometry, and the penetration depth of the SP fringing field in the p-GaN.	Metals	71-76	gigaxonin	Homo sapiens	196-199
33925717-4	2021	The strength of the SP-QW coupling is mainly influenced by the type of metal used for SP enhancement, the metal nanostructure geometry, and the penetration depth of the SP fringing field in the p-GaN.	sp	20-22	gigaxonin	Homo sapiens	196-199
33925717-5	2021	The use of an appropriate dielectric interlayer between the metal and the p-GaN allows further control over SP resonance with QW emission wavelength.	sp	108-110	gigaxonin	Homo sapiens	76-79
33500065-6	2021	For GaN high electron mobility transistors (HEMTs), an Al-on-PureB gate stack was developed that promises to be a robust alternative to the conventional Ni-Au gates.	Aluminum	55-57	gigaxonin	Homo sapiens	4-7
33524916-0	2021	Electron energy loss spectroscopy and first-principles study of GaN via Zn doping.	Zinc	72-74	gigaxonin	Homo sapiens	64-67
33524916-1	2021	The electronic structure of GaN and GaN:Zn was investigated by electron energy loss spectroscopy and first-principles calculations.	Zinc	40-42	gigaxonin	Homo sapiens	36-39
33524916-5	2021	A core-hole effect is believed to be significant for simulation of the N K-edge for both GaN and GaN:Zn.	Zinc	101-103	gigaxonin	Homo sapiens	97-100
33246321-6	2021	The importance of two-dimensional electron gas in AlN/GaN quantum wells lies in the fact that the strong piezoelectricity of AlN allows the transport properties of the two-dimensional electron gas to be tuned or modulated by a weak electric field even with the high density of lattice mismatch induced defects at the AlN-GaN interface .	aln	125-128	gigaxonin	Homo sapiens	54-57
33785795-6	2021	From these results, we suggest that by controlling the gate bias, a thin AlGaN barrier can amplify/attenuate the photocurrent of the AlGaN/GaN HEMT-based phototransistor.	hemt	143-147	gigaxonin	Homo sapiens	75-78
33860742-1	2021	This paper characterizes novel "star" defects in GaN films grown with metal-organic vapor phase deposition (MOVPE) on GaN substrates with electron channeling contrast imaging (ECCI) and high-resolution electron backscatter diffraction (HREBSD).	Metals	70-75	gigaxonin	Homo sapiens	49-52
33246321-6	2021	The importance of two-dimensional electron gas in AlN/GaN quantum wells lies in the fact that the strong piezoelectricity of AlN allows the transport properties of the two-dimensional electron gas to be tuned or modulated by a weak electric field even with the high density of lattice mismatch induced defects at the AlN-GaN interface .	aln	125-128	gigaxonin	Homo sapiens	321-324
33246321-6	2021	The importance of two-dimensional electron gas in AlN/GaN quantum wells lies in the fact that the strong piezoelectricity of AlN allows the transport properties of the two-dimensional electron gas to be tuned or modulated by a weak electric field even with the high density of lattice mismatch induced defects at the AlN-GaN interface .	aln	125-128	gigaxonin	Homo sapiens	54-57
33246321-6	2021	The importance of two-dimensional electron gas in AlN/GaN quantum wells lies in the fact that the strong piezoelectricity of AlN allows the transport properties of the two-dimensional electron gas to be tuned or modulated by a weak electric field even with the high density of lattice mismatch induced defects at the AlN-GaN interface .	aln	125-128	gigaxonin	Homo sapiens	321-324
33726435-2	2021	By thinning the p-GaN to several nm, highly DUV transparent p-type layer is achieved, making it meaningful for the application of reflective electrodes composed of Ag-nanodots and Al film to allow most light emitted upward to be reflected back to the sapphire side.	Aluminum	180-182	gigaxonin	Homo sapiens	18-21
33555173-4	2021	The combination of the CrBr3 monolayer with N-terminated GaN nanosheets leads to enhanced FM coupling via superexchange interactions between the Cr-t2g and Cr-eg orbitals, consequently resulting in a Curie temperature of CrBr3 of up to 67 K. Moreover, self-doped p-n junctions can be naturally formed in the heterostructures without additional modulation of external fields.	Tribromochromium	23-28	gigaxonin	Homo sapiens	57-60
33555173-4	2021	The combination of the CrBr3 monolayer with N-terminated GaN nanosheets leads to enhanced FM coupling via superexchange interactions between the Cr-t2g and Cr-eg orbitals, consequently resulting in a Curie temperature of CrBr3 of up to 67 K. Moreover, self-doped p-n junctions can be naturally formed in the heterostructures without additional modulation of external fields.	Chromium	23-25	gigaxonin	Homo sapiens	57-60
33555173-4	2021	The combination of the CrBr3 monolayer with N-terminated GaN nanosheets leads to enhanced FM coupling via superexchange interactions between the Cr-t2g and Cr-eg orbitals, consequently resulting in a Curie temperature of CrBr3 of up to 67 K. Moreover, self-doped p-n junctions can be naturally formed in the heterostructures without additional modulation of external fields.	Chromium	145-147	gigaxonin	Homo sapiens	57-60
33555173-4	2021	The combination of the CrBr3 monolayer with N-terminated GaN nanosheets leads to enhanced FM coupling via superexchange interactions between the Cr-t2g and Cr-eg orbitals, consequently resulting in a Curie temperature of CrBr3 of up to 67 K. Moreover, self-doped p-n junctions can be naturally formed in the heterostructures without additional modulation of external fields.	Tribromochromium	221-226	gigaxonin	Homo sapiens	57-60
33555173-4	2021	The combination of the CrBr3 monolayer with N-terminated GaN nanosheets leads to enhanced FM coupling via superexchange interactions between the Cr-t2g and Cr-eg orbitals, consequently resulting in a Curie temperature of CrBr3 of up to 67 K. Moreover, self-doped p-n junctions can be naturally formed in the heterostructures without additional modulation of external fields.	Phosphorus	96-97	gigaxonin	Homo sapiens	57-60
33555173-4	2021	The combination of the CrBr3 monolayer with N-terminated GaN nanosheets leads to enhanced FM coupling via superexchange interactions between the Cr-t2g and Cr-eg orbitals, consequently resulting in a Curie temperature of CrBr3 of up to 67 K. Moreover, self-doped p-n junctions can be naturally formed in the heterostructures without additional modulation of external fields.	Nitrogen	9-10	gigaxonin	Homo sapiens	57-60
33555173-5	2021	The enhanced FM coupling and self-doping effect in the heterostructures are associated with the intrinsic polarization of the GaN layer that drives interfacial electron transfers from GaN to CrBr3.	Tribromochromium	191-196	gigaxonin	Homo sapiens	126-129
33555173-5	2021	The enhanced FM coupling and self-doping effect in the heterostructures are associated with the intrinsic polarization of the GaN layer that drives interfacial electron transfers from GaN to CrBr3.	Tribromochromium	191-196	gigaxonin	Homo sapiens	184-187
33507863-6	2021	Following this idea, we first introduce a scale-ware Shape-Matching GAN to learn such mappings to simultaneously model the style shape features at multiple scales and transfer them onto the target glyph.	glyph	197-202	gigaxonin	Homo sapiens	68-71
33510188-2	2021	In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects.	Silicon	46-48	gigaxonin	Homo sapiens	42-45
33510188-2	2021	In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects.	Helium	74-80	gigaxonin	Homo sapiens	42-45
32906087-4	2021	Mixture of wurtzite (hexagonal) and zinc blende (cubic) crystallographic phases was found in the GaN layers with ratios highly dependent on the growth conditions.	wurtzite	11-19	gigaxonin	Homo sapiens	97-100
33499097-2	2021	Using detailed group-theoretical analysis, the genesis of the SL vibrational modes from the modes of bulk AlN and GaN crystals is established.	aln	106-109	gigaxonin	Homo sapiens	114-117
33450822-0	2021	Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium.	Germanium	60-69	gigaxonin	Homo sapiens	38-41
32906087-5	2021	Interestingly, almost pure zinc blende GaN epitaxial layers could be obtained at high growth temperature, suggesting the existence of a specific GaN nucleation mechanism on mica and opening a new way to the growth of the thermodynamically less stable zinc blende GaN phase.	zinc sulfide	27-38	gigaxonin	Homo sapiens	39-42
32906087-5	2021	Interestingly, almost pure zinc blende GaN epitaxial layers could be obtained at high growth temperature, suggesting the existence of a specific GaN nucleation mechanism on mica and opening a new way to the growth of the thermodynamically less stable zinc blende GaN phase.	zinc sulfide	27-38	gigaxonin	Homo sapiens	145-148
32906087-5	2021	Interestingly, almost pure zinc blende GaN epitaxial layers could be obtained at high growth temperature, suggesting the existence of a specific GaN nucleation mechanism on mica and opening a new way to the growth of the thermodynamically less stable zinc blende GaN phase.	zinc sulfide	27-38	gigaxonin	Homo sapiens	145-148
32906087-5	2021	Interestingly, almost pure zinc blende GaN epitaxial layers could be obtained at high growth temperature, suggesting the existence of a specific GaN nucleation mechanism on mica and opening a new way to the growth of the thermodynamically less stable zinc blende GaN phase.	zinc sulfide	251-262	gigaxonin	Homo sapiens	39-42
32906087-5	2021	Interestingly, almost pure zinc blende GaN epitaxial layers could be obtained at high growth temperature, suggesting the existence of a specific GaN nucleation mechanism on mica and opening a new way to the growth of the thermodynamically less stable zinc blende GaN phase.	zinc sulfide	251-262	gigaxonin	Homo sapiens	145-148
32906087-5	2021	Interestingly, almost pure zinc blende GaN epitaxial layers could be obtained at high growth temperature, suggesting the existence of a specific GaN nucleation mechanism on mica and opening a new way to the growth of the thermodynamically less stable zinc blende GaN phase.	zinc sulfide	251-262	gigaxonin	Homo sapiens	145-148
33300892-6	2020	The interface of the BP/GaN heterostructure is atomically sharp, which is very critical for high-performance device fabrication using a direct step in the future.	Phosphorus	21-23	gigaxonin	Homo sapiens	24-27
33300892-11	2020	Combining the results of the experiment and simulation, it can be revealed that the P adatom on undulatory GaN is sufficiently mobile and the undulating surface of GaN plays a major role in forming high-quality thin-films of BP.	Phosphorus	225-227	gigaxonin	Homo sapiens	107-110
33300892-3	2020	Here, a facile, direct synthesis of highly crystalline thin-film BP on GaN(001) substrates is achieved by conversion of red phosphorus to BP under atmospheric pressure.	Phosphorus	65-67	gigaxonin	Homo sapiens	71-74
33300892-3	2020	Here, a facile, direct synthesis of highly crystalline thin-film BP on GaN(001) substrates is achieved by conversion of red phosphorus to BP under atmospheric pressure.	Phosphorus	120-134	gigaxonin	Homo sapiens	71-74
33300892-3	2020	Here, a facile, direct synthesis of highly crystalline thin-film BP on GaN(001) substrates is achieved by conversion of red phosphorus to BP under atmospheric pressure.	Phosphorus	138-140	gigaxonin	Homo sapiens	71-74
33300892-11	2020	Combining the results of the experiment and simulation, it can be revealed that the P adatom on undulatory GaN is sufficiently mobile and the undulating surface of GaN plays a major role in forming high-quality thin-films of BP.	Phosphorus	225-227	gigaxonin	Homo sapiens	164-167
33300892-12	2020	The preferentially covered nearby step growth mechanism discovered here may enable the mass production of high-quality thin-film BP, and could also be instrumental in achieving the epitaxial growth of thin-film BP on GaN and other 2D materials.	Phosphorus	129-131	gigaxonin	Homo sapiens	217-220
33300892-12	2020	The preferentially covered nearby step growth mechanism discovered here may enable the mass production of high-quality thin-film BP, and could also be instrumental in achieving the epitaxial growth of thin-film BP on GaN and other 2D materials.	Phosphorus	211-213	gigaxonin	Homo sapiens	217-220
32711626-2	2020	The UV detector composed of n-GaN and p-GaN film with oxide layer which was constructed by directly contacting way.	Oxides	54-59	gigaxonin	Homo sapiens	40-43
33328514-0	2020	Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure.	Graphite	47-55	gigaxonin	Homo sapiens	72-75
33328514-7	2020	For instance, the responsivity of 10.9 A/W was observed with the gain of 760 at the induced bias voltage of 5 V. This unique multifunctionality enabled by the combination of an AlGaN/GaN heterostructure with graphene electrodes facilitates the development of a single device that can achieve multiple purposes of photodetection.	Graphite	208-216	gigaxonin	Homo sapiens	179-182
32711626-3	2020	The detector based on GaN p-GaN/oxide layer/n-GaN structure showed high UV response with fast speed.	Oxides	32-37	gigaxonin	Homo sapiens	22-25
32711626-3	2020	The detector based on GaN p-GaN/oxide layer/n-GaN structure showed high UV response with fast speed.	Nitrogen	20-21	gigaxonin	Homo sapiens	22-25
32711626-3	2020	The detector based on GaN p-GaN/oxide layer/n-GaN structure showed high UV response with fast speed.	Nitrogen	20-21	gigaxonin	Homo sapiens	28-31
32711626-3	2020	The detector based on GaN p-GaN/oxide layer/n-GaN structure showed high UV response with fast speed.	Nitrogen	20-21	gigaxonin	Homo sapiens	28-31
33021615-0	2020	Semi-transparent quaternary oxynitride photoanodes on GaN underlayers.	oxynitride photoanodes	28-50	gigaxonin	Homo sapiens	54-57
33115130-4	2020	The presence of the MoOx layer between n-type ZnO and p-type GaN leads to the confinement of electrons and an increase in the electron charge density at n-type ZnO.	Zinc Oxide	160-163	gigaxonin	Homo sapiens	61-64
32604506-1	2020	We investigated the use of a silver reflector embedded with Ni-Cu nanoparticles to achieve low resistance and high reflectivity in GaN-based flip-chip light-emitting diodes.	Silver	29-35	gigaxonin	Homo sapiens	131-134
32901640-0	2020	van der Waals heterostructures based on MSSe (M = Mo, W) and graphene-like GaN: enhanced optoelectronic and photocatalytic properties for water splitting.	Graphite	61-69	gigaxonin	Homo sapiens	75-78
33017819-0	2020	Hybrid functional investigation of band offsets for non-polar, Ga-polar and Al-polar interfaces in GaN/AlN heterojunction.	Gallium	63-65	gigaxonin	Homo sapiens	99-102
33017819-0	2020	Hybrid functional investigation of band offsets for non-polar, Ga-polar and Al-polar interfaces in GaN/AlN heterojunction.	Aluminum	76-78	gigaxonin	Homo sapiens	99-102
33026030-1	2020	We present an atomistic theoretical analysis of the electronic and excitonic properties of ultrathin, monolayer thick wurtzite (In,Ga)N embedded in GaN.	ultrathin	91-100	gigaxonin	Homo sapiens	148-151
33026030-1	2020	We present an atomistic theoretical analysis of the electronic and excitonic properties of ultrathin, monolayer thick wurtzite (In,Ga)N embedded in GaN.	wurtzite	118-126	gigaxonin	Homo sapiens	148-151
33026030-1	2020	We present an atomistic theoretical analysis of the electronic and excitonic properties of ultrathin, monolayer thick wurtzite (In,Ga)N embedded in GaN.	Gallium	131-133	gigaxonin	Homo sapiens	148-151
33027953-1	2020	III-nitride resonant cavity-enhanced Schottky barrier photodetectors were fabricated on 2 microm thick GaN templates by radio frequency plasma-assisted molecular beam epitaxy.	iii-nitride	0-11	gigaxonin	Homo sapiens	103-106
33004847-5	2020	After irradiation, the GaN was annealed in a nitrogen environment at 950  C for 30 min.	Nitrogen	45-53	gigaxonin	Homo sapiens	23-26
32901640-0	2020	van der Waals heterostructures based on MSSe (M = Mo, W) and graphene-like GaN: enhanced optoelectronic and photocatalytic properties for water splitting.	Water	138-143	gigaxonin	Homo sapiens	75-78
32638585-4	2020	Here we introduce N-heterocyclic carbene as a durable linker for the immobilization of a Rubpy complex-based CO2 reduction site (RuCY) on a p-type gallium nitride/gold nanoparticles (p-GaN/AuNPs) heterostructure.	4-Chloro-5-nitrophthalimide	18-40	gigaxonin	Homo sapiens	185-188
32988057-1	2020	We demonstrate an improvement in the photoresponse characteristics of ultraviolet (UV) photodetectors (PDs) using the N2O plasma-treated ZnO nanorod (NR) gated AlGaN/GaN high electron mobility transistor (HEMT) structure.	Nitrous Oxide	118-121	gigaxonin	Homo sapiens	162-165
32988057-1	2020	We demonstrate an improvement in the photoresponse characteristics of ultraviolet (UV) photodetectors (PDs) using the N2O plasma-treated ZnO nanorod (NR) gated AlGaN/GaN high electron mobility transistor (HEMT) structure.	Zinc Oxide	137-140	gigaxonin	Homo sapiens	162-165
32899535-3	2020	In this paper, we deposited AlON by sputtering AlN with O2, and we found that the variation of thickness of sputtered AlON NLs greatly influenced GaN growth on PSSs.	Oxygen	56-58	gigaxonin	Homo sapiens	146-149
32957632-8	2020	A good quality of graphene/AlGaN Schottky barrier diodes and AlGaN/GaN transistors opens the way for transparent GaN-based electronics and GaN-based devices exploring vertical electron transport in graphene.	Graphite	18-26	gigaxonin	Homo sapiens	29-32
32731212-0	2020	Corrigendum: Optical properties of GaN nanowires grown on chemical vapor deposited-graphene (2019 Nanotechnology 30 214005).	Graphite	83-91	gigaxonin	Homo sapiens	35-38
32638585-4	2020	Here we introduce N-heterocyclic carbene as a durable linker for the immobilization of a Rubpy complex-based CO2 reduction site (RuCY) on a p-type gallium nitride/gold nanoparticles (p-GaN/AuNPs) heterostructure.	Carbon Dioxide	109-112	gigaxonin	Homo sapiens	185-188
32638585-4	2020	Here we introduce N-heterocyclic carbene as a durable linker for the immobilization of a Rubpy complex-based CO2 reduction site (RuCY) on a p-type gallium nitride/gold nanoparticles (p-GaN/AuNPs) heterostructure.	gallium nitride	147-162	gigaxonin	Homo sapiens	185-188
32638585-5	2020	The p-GaN/AuNPs/RuCY photocathode was coupled with a hematite photoanode to drive photoelectrochemical CO2 reduction along with water oxidation.	hematite photoanode	53-72	gigaxonin	Homo sapiens	6-9
32638585-5	2020	The p-GaN/AuNPs/RuCY photocathode was coupled with a hematite photoanode to drive photoelectrochemical CO2 reduction along with water oxidation.	Carbon Dioxide	103-106	gigaxonin	Homo sapiens	6-9
32638585-5	2020	The p-GaN/AuNPs/RuCY photocathode was coupled with a hematite photoanode to drive photoelectrochemical CO2 reduction along with water oxidation.	Water	128-133	gigaxonin	Homo sapiens	6-9
32724225-0	2020	Photoelectrochemical and crystalline properties of a GaN photoelectrode loaded with alpha-Fe2O3 as cocatalyst.	alpha-fe2o3	84-95	gigaxonin	Homo sapiens	53-56
32724225-0	2020	Photoelectrochemical and crystalline properties of a GaN photoelectrode loaded with alpha-Fe2O3 as cocatalyst.	cocatalyst	99-109	gigaxonin	Homo sapiens	53-56
32724225-3	2020	Here, we report the improvement of the catalytic performance and chemical stability of a GaN electrode when it is decorated with Fe2O3 particles compared with an undecorated electrode.	Iron(III) oxide	129-134	gigaxonin	Homo sapiens	89-92
32724225-4	2020	Our results show a higher reaction rate in the Fe2O3/GaN electrode, and that photocorrosion marks take more than 20 times longer to appear on it.	Iron(III) oxide	47-52	gigaxonin	Homo sapiens	53-56
32724225-6	2020	The results show that the Fe2O3 particles keep an epitaxial relationship with GaN that follows the Fe2O3[Formula: see text]GaN[Formula: see text] and Fe2O3[Formula: see text]GaN[Formula: see text] symmetry constraints.	Iron(III) oxide	26-31	gigaxonin	Homo sapiens	78-81
32724225-6	2020	The results show that the Fe2O3 particles keep an epitaxial relationship with GaN that follows the Fe2O3[Formula: see text]GaN[Formula: see text] and Fe2O3[Formula: see text]GaN[Formula: see text] symmetry constraints.	Iron(III) oxide	26-31	gigaxonin	Homo sapiens	123-126
32724225-6	2020	The results show that the Fe2O3 particles keep an epitaxial relationship with GaN that follows the Fe2O3[Formula: see text]GaN[Formula: see text] and Fe2O3[Formula: see text]GaN[Formula: see text] symmetry constraints.	Iron(III) oxide	26-31	gigaxonin	Homo sapiens	123-126
32724225-6	2020	The results show that the Fe2O3 particles keep an epitaxial relationship with GaN that follows the Fe2O3[Formula: see text]GaN[Formula: see text] and Fe2O3[Formula: see text]GaN[Formula: see text] symmetry constraints.	Iron(III) oxide	99-104	gigaxonin	Homo sapiens	78-81
32724225-6	2020	The results show that the Fe2O3 particles keep an epitaxial relationship with GaN that follows the Fe2O3[Formula: see text]GaN[Formula: see text] and Fe2O3[Formula: see text]GaN[Formula: see text] symmetry constraints.	Iron(III) oxide	99-104	gigaxonin	Homo sapiens	123-126
32724225-6	2020	The results show that the Fe2O3 particles keep an epitaxial relationship with GaN that follows the Fe2O3[Formula: see text]GaN[Formula: see text] and Fe2O3[Formula: see text]GaN[Formula: see text] symmetry constraints.	Iron(III) oxide	99-104	gigaxonin	Homo sapiens	123-126
32724225-6	2020	The results show that the Fe2O3 particles keep an epitaxial relationship with GaN that follows the Fe2O3[Formula: see text]GaN[Formula: see text] and Fe2O3[Formula: see text]GaN[Formula: see text] symmetry constraints.	Iron(III) oxide	99-104	gigaxonin	Homo sapiens	78-81
32724225-6	2020	The results show that the Fe2O3 particles keep an epitaxial relationship with GaN that follows the Fe2O3[Formula: see text]GaN[Formula: see text] and Fe2O3[Formula: see text]GaN[Formula: see text] symmetry constraints.	Iron(III) oxide	99-104	gigaxonin	Homo sapiens	123-126
32724225-6	2020	The results show that the Fe2O3 particles keep an epitaxial relationship with GaN that follows the Fe2O3[Formula: see text]GaN[Formula: see text] and Fe2O3[Formula: see text]GaN[Formula: see text] symmetry constraints.	Iron(III) oxide	99-104	gigaxonin	Homo sapiens	123-126
32724225-8	2020	The epitaxial relationship found between the Fe2O3 thin film and GaN exhibited the Fe2O3[Formula: see text]GaN[Formula: see text] and Fe2O3[Formula: see text]GaN[Formula: see text] symmetry constraints.	Iron(III) oxide	45-50	gigaxonin	Homo sapiens	65-68
32724225-8	2020	The epitaxial relationship found between the Fe2O3 thin film and GaN exhibited the Fe2O3[Formula: see text]GaN[Formula: see text] and Fe2O3[Formula: see text]GaN[Formula: see text] symmetry constraints.	Iron(III) oxide	45-50	gigaxonin	Homo sapiens	107-110
32724225-8	2020	The epitaxial relationship found between the Fe2O3 thin film and GaN exhibited the Fe2O3[Formula: see text]GaN[Formula: see text] and Fe2O3[Formula: see text]GaN[Formula: see text] symmetry constraints.	Iron(III) oxide	45-50	gigaxonin	Homo sapiens	107-110
32724225-8	2020	The epitaxial relationship found between the Fe2O3 thin film and GaN exhibited the Fe2O3[Formula: see text]GaN[Formula: see text] and Fe2O3[Formula: see text]GaN[Formula: see text] symmetry constraints.	Iron(III) oxide	83-88	gigaxonin	Homo sapiens	65-68
32724225-8	2020	The epitaxial relationship found between the Fe2O3 thin film and GaN exhibited the Fe2O3[Formula: see text]GaN[Formula: see text] and Fe2O3[Formula: see text]GaN[Formula: see text] symmetry constraints.	Iron(III) oxide	83-88	gigaxonin	Homo sapiens	107-110
32724225-8	2020	The epitaxial relationship found between the Fe2O3 thin film and GaN exhibited the Fe2O3[Formula: see text]GaN[Formula: see text] and Fe2O3[Formula: see text]GaN[Formula: see text] symmetry constraints.	Iron(III) oxide	83-88	gigaxonin	Homo sapiens	107-110
32724225-8	2020	The epitaxial relationship found between the Fe2O3 thin film and GaN exhibited the Fe2O3[Formula: see text]GaN[Formula: see text] and Fe2O3[Formula: see text]GaN[Formula: see text] symmetry constraints.	Iron(III) oxide	83-88	gigaxonin	Homo sapiens	65-68
32724225-8	2020	The epitaxial relationship found between the Fe2O3 thin film and GaN exhibited the Fe2O3[Formula: see text]GaN[Formula: see text] and Fe2O3[Formula: see text]GaN[Formula: see text] symmetry constraints.	Iron(III) oxide	83-88	gigaxonin	Homo sapiens	107-110
32724225-8	2020	The epitaxial relationship found between the Fe2O3 thin film and GaN exhibited the Fe2O3[Formula: see text]GaN[Formula: see text] and Fe2O3[Formula: see text]GaN[Formula: see text] symmetry constraints.	Iron(III) oxide	83-88	gigaxonin	Homo sapiens	107-110