PMID-sentid	Pub_year	Sent_text		comp_official_name	comp_offsetprotein_name	organism	prot_offset
27758108-0	2016	Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks.	Oxides	79-84	TRAP	Homo sapiens	29-33	
30640426-6	2019	We disclosed that acceptor-like trap states induced by Pr ions might lead to the suppression of photo-induced carrier in conduction band, which is a new strategy for improving illumination stability of amorphous oxide semiconductors.	Oxides	212-217	TRAP	Homo sapiens	32-36	
29998730-0	2018	Visible Light-Erasable Oxide FET-Based Nonvolatile Memory Operated with a Deep Trap Interface.	Oxides	23-28	TRAP	Homo sapiens	79-83	
29998730-1	2018	A new concept of a tunneling oxide-free nonvolatile memory device with a deep trap interface floating gate is proposed.	Oxides	29-34	TRAP	Homo sapiens	78-82	
27758108-3	2016	Observation of a temperature dependent border trap response, associated with the frequency dispersion of the accumulation capacitance and conductance of metal-oxide-semiconductor (MOS) structures, is found to be correlated with the presence of this defective interfacial layer.	Oxides	159-164	TRAP	Homo sapiens	46-50	
27758108-6	2016	These results point out the sensitivity of the temperature dependence of the border trap response in metal oxide/III-V MOS gate stacks to the presence of processing-induced interface oxide layers, which alter the dynamics of carrier trapping at defects that are not located at the semiconductor interface.	Oxides	107-112	TRAP	Homo sapiens	84-88	
27483908-2	2016	The RTN data that was measured and analytical equations are used to extract the values of the parameters for the vertical distance of the oxide trap from the interface and of the energy level of the interface trap.	Oxides	138-143	TRAP	Homo sapiens	144-148	
27483908-2	2016	The RTN data that was measured and analytical equations are used to extract the values of the parameters for the vertical distance of the oxide trap from the interface and of the energy level of the interface trap.	Oxides	138-143	TRAP	Homo sapiens	209-213