PMID-sentid	Pub_year	Sent_text		comp_official_name	comp_offsetprotein_name	organism	prot_offset
33670823-1	2021	An inverted-type InAlAs/InAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with liquid phase oxidized (LPO) InAlAs as the gate insulator is demonstrated.	metal-oxide	29-40	MOS proto-oncogene, serine/threonine kinase	Homo sapiens	90-93	
34945290-1	2021	AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (MOS-HEMTs) with undoped ferroelectric HfO2 have been investigated.	metal-oxide	10-21	MOS proto-oncogene, serine/threonine kinase	Homo sapiens	72-75