PMID-sentid	Pub_year	Sent_text		comp_official_name	comp_offsetprotein_name	organism	prot_offset
21449429-1	2011	Cobalt films were grown by molecular beam epitaxy on CaF2 buffer layers on silicon.	Cobalt	0-6	CCR4-NOT transcription complex subunit 8	Homo sapiens	53-57	
24046491-1	2013	In this work epitaxial growth of cobalt on CaF2(111), (110) and (001) surfaces has been extensively studied.	Cobalt	33-39	CCR4-NOT transcription complex subunit 8	Homo sapiens	43-47	
27327385-4	1996	METHODS: CaF2 :Dy or CaF2 was sensitized to UV by heating for 1-3 h to 750-950(o) C on different supports (porcelain, steel, preheated steel, silicon, chromium, manganese, iron, cobalt, nickel, copper, Fe2 O3 , Fe3 O4 ).	Cobalt	178-184	CCR4-NOT transcription complex subunit 8	Homo sapiens	9-13	
27327385-4	1996	METHODS: CaF2 :Dy or CaF2 was sensitized to UV by heating for 1-3 h to 750-950(o) C on different supports (porcelain, steel, preheated steel, silicon, chromium, manganese, iron, cobalt, nickel, copper, Fe2 O3 , Fe3 O4 ).	Cobalt	178-184	CCR4-NOT transcription complex subunit 8	Homo sapiens	21-25	
33079530-4	2020	Ba122:Co was selected because its Tc is robust to hydrostatic pressure but sensitive to epitaxial strain (i.e., one of the anisotropic strains), and the selected substrates entirely cover the positive/negative lattice mismatches, thermal expansion coefficients, and compressibilities with respect to Ba122:Co. With strong anisotropic strain successfully induced by film growth, external hydrostatic pressurizing, and cooling processes, we observed unique carrier transport properties in Ba122:Co epitaxial films on CaF2 and BaF2 substrates including (i) upturn behavior in the temperature dependence of the longitudinal resistivity, (ii) negative magnetoresistance, (iii) large enhancement of anomalous Hall effects in the epitaxial films on CaF2, and (iv) enhancement of Tc to 27 K in the epitaxial films on BaF2.	Cobalt	6-8	CCR4-NOT transcription complex subunit 8	Homo sapiens	515-519	
33079530-4	2020	Ba122:Co was selected because its Tc is robust to hydrostatic pressure but sensitive to epitaxial strain (i.e., one of the anisotropic strains), and the selected substrates entirely cover the positive/negative lattice mismatches, thermal expansion coefficients, and compressibilities with respect to Ba122:Co. With strong anisotropic strain successfully induced by film growth, external hydrostatic pressurizing, and cooling processes, we observed unique carrier transport properties in Ba122:Co epitaxial films on CaF2 and BaF2 substrates including (i) upturn behavior in the temperature dependence of the longitudinal resistivity, (ii) negative magnetoresistance, (iii) large enhancement of anomalous Hall effects in the epitaxial films on CaF2, and (iv) enhancement of Tc to 27 K in the epitaxial films on BaF2.	Cobalt	6-8	CCR4-NOT transcription complex subunit 8	Homo sapiens	742-746