PMID-sentid	Pub_year	Sent_text		comp_official_name	comp_offsetprotein_name	organism	prot_offset
26373117-1	2015	This paper reports the etch rates and etched surface morphology of semipolar GaN using a potassium hydroxide (KOH) solution.	potassium hydroxide	89-108	gigaxonin	Homo sapiens	77-80	
26373117-1	2015	This paper reports the etch rates and etched surface morphology of semipolar GaN using a potassium hydroxide (KOH) solution.	potassium hydroxide	110-113	gigaxonin	Homo sapiens	77-80	
26373117-2	2015	Semipolar (11-22) GaN could be etched easily using a KOH solution and the etch rate was higher than that of Ga-polar c-plane GaN (0001).	potassium hydroxide	53-56	gigaxonin	Homo sapiens	18-21	
26373117-3	2015	The etch rate was anisotropic and the highest etch rate was measured to be approximately 116 nm/min for the (1011) plane and 62 nm/min for the (11-20) plane GaN using a 4 M KOH solution at 100  C, resulting in specific surface features, such as inclined trigonal cells.	potassium hydroxide	173-176	gigaxonin	Homo sapiens	157-160	
22409032-2	2011	Patterned GaN with 2 microm-wide sink-like strips was achieved by using 500 keV Au+ ion implantation and KOH etching.	potassium hydroxide	105-108	gigaxonin	Homo sapiens	10-13