PMID-sentid Pub_year Sent_text comp_official_name comp_offsetprotein_name organism prot_offset 32957632-8 2020 A good quality of graphene/AlGaN Schottky barrier diodes and AlGaN/GaN transistors opens the way for transparent GaN-based electronics and GaN-based devices exploring vertical electron transport in graphene. Graphite 18-26 gigaxonin Homo sapiens 29-32 32901640-0 2020 van der Waals heterostructures based on MSSe (M = Mo, W) and graphene-like GaN: enhanced optoelectronic and photocatalytic properties for water splitting. Graphite 61-69 gigaxonin Homo sapiens 75-78 33328514-0 2020 Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure. Graphite 47-55 gigaxonin Homo sapiens 72-75 33328514-7 2020 For instance, the responsivity of 10.9 A/W was observed with the gain of 760 at the induced bias voltage of 5 V. This unique multifunctionality enabled by the combination of an AlGaN/GaN heterostructure with graphene electrodes facilitates the development of a single device that can achieve multiple purposes of photodetection. Graphite 208-216 gigaxonin Homo sapiens 179-182 29745232-0 2018 Self-Assembled UV Photodetector Made by Direct Epitaxial GaN Growth on Graphene. Graphite 71-79 gigaxonin Homo sapiens 57-60 31804060-0 2019 Ultra-robust Deep-UV Photovoltaic Detector Based on Graphene/(AlGa)2O3/GaN with High-Performance in Temperature Fluctuations. Graphite 52-60 gigaxonin Homo sapiens 71-74 31804060-2 2019 Here, a graphene/(AlGa)2O3/GaN device with a photoresponsivity of ~20 mA/W, a rise time of ~2 mus and a decay time of ~10 ms is presented at 0 V bias. Graphite 8-16 gigaxonin Homo sapiens 27-30 32731212-0 2020 Corrigendum: Optical properties of GaN nanowires grown on chemical vapor deposited-graphene (2019 Nanotechnology 30 214005). Graphite 83-91 gigaxonin Homo sapiens 35-38 31964934-0 2020 The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene. Graphite 85-93 gigaxonin Homo sapiens 66-69 31964934-1 2020 GaN nanocolumns were synthesized on single-layer graphene via radio-frequency plasma-assisted molecular beam epitaxy, using a thin migration-enhanced epitaxy (MEE) AlN buffer layer as nucleation sites. Graphite 49-57 gigaxonin Homo sapiens 0-3 31964934-2 2020 Due to the weak nucleation on graphene, instead of an AlN thin-film we observe two distinguished AlN formations which affect the subsequent GaN nanocolumn growth: (i) AlN islands and (ii) AlN nanostructures grown along line defects (grain boundaries or wrinkles) of graphene. Graphite 30-38 gigaxonin Homo sapiens 140-143 31964934-2 2020 Due to the weak nucleation on graphene, instead of an AlN thin-film we observe two distinguished AlN formations which affect the subsequent GaN nanocolumn growth: (i) AlN islands and (ii) AlN nanostructures grown along line defects (grain boundaries or wrinkles) of graphene. Graphite 266-274 gigaxonin Homo sapiens 140-143 31964934-4 2020 Additionally, there is a limited amount of direct GaN nucleation on graphene, which induces non-vertical GaN nanocolumn growth. Graphite 68-76 gigaxonin Homo sapiens 50-53 31964934-4 2020 Additionally, there is a limited amount of direct GaN nucleation on graphene, which induces non-vertical GaN nanocolumn growth. Graphite 68-76 gigaxonin Homo sapiens 105-108 30704131-0 2019 Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor. Graphite 51-59 gigaxonin Homo sapiens 32-35 29745232-3 2018 In this work, we study the direct epitaxy of self-organized GaN crystals on graphene. Graphite 76-84 gigaxonin Homo sapiens 60-63 29745232-5 2018 Graphene can therefore be used both as an efficient sensitive material and as a substrate for GaN epitaxy to make a self-assembled UV photodetector. Graphite 0-8 gigaxonin Homo sapiens 94-97 28244739-6 2017 Moreover, the high doping level occurred simultaneously with the epitaxial growth of n-GaN micro- and nanorods on top of graphene, leading to the flow of higher currents through the graphene/n-GaN rod interface. Graphite 121-129 gigaxonin Homo sapiens 87-90 28303797-0 2017 Flexible resistive random access memory devices by using NiO x /GaN microdisk arrays fabricated on graphene films. Graphite 99-107 gigaxonin Homo sapiens 64-67 28303797-1 2017 We report flexible resistive random access memory (ReRAM) arrays fabricated by using NiO x /GaN microdisk arrays on graphene films. Graphite 116-124 gigaxonin Homo sapiens 92-95 28244739-6 2017 Moreover, the high doping level occurred simultaneously with the epitaxial growth of n-GaN micro- and nanorods on top of graphene, leading to the flow of higher currents through the graphene/n-GaN rod interface. Graphite 121-129 gigaxonin Homo sapiens 193-196 25567005-0 2015 Luminescence signature of free exciton dissociation and liberated electron transfer across the junction of graphene/GaN hybrid structure. Graphite 107-115 gigaxonin Homo sapiens 116-119 26028318-0 2015 Ultraviolet photoconductive devices with an n-GaN nanorod-graphene hybrid structure synthesized by metal-organic chemical vapor deposition. Graphite 58-66 gigaxonin Homo sapiens 46-49 26028318-1 2015 The superior photoconductive behavior of a simple, cost-effective n-GaN nanorod (NR)-graphene hybrid device structure is demonstrated for the first time. Graphite 85-93 gigaxonin Homo sapiens 68-71 26028318-3 2015 Defect-free n-GaN NRs were grown on a highly ordered graphene monolayer on Si without forming any metal-catalyst or droplet seeds. Graphite 53-61 gigaxonin Homo sapiens 14-17 27781998-1 2016 In this paper, we report on a pressure sensor based on graphene aerogel functionalized with SnO2 or GaN thin films deposited by magnetron sputtering. Graphite 55-63 gigaxonin Homo sapiens 100-103 27346527-0 2016 Flexible GaN Light-Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots. Graphite 89-97 gigaxonin Homo sapiens 9-12 27346527-0 2016 Flexible GaN Light-Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots. Graphite 89-97 gigaxonin Homo sapiens 41-44 27346527-1 2016 The epitaxial lateral overgrowth (ELOG) of GaN microdisks on graphene microdots and the fabrication of flexible light-emitting diodes (LEDs) using these microdisks is reported. Graphite 61-69 gigaxonin Homo sapiens 43-46 25665033-0 2015 Improving the quality of GaN crystals by using graphene or hexagonal boron nitride nanosheets substrate. Graphite 47-55 gigaxonin Homo sapiens 25-28 25665033-3 2015 Here, we report graphene or hexagonal boron nitride nanosheets can be used to improve the quality of GaN crystal using hydride vapor phase epitaxy methods. Graphite 16-24 gigaxonin Homo sapiens 101-104 25567005-1 2015 Large-area graphene grown on Cu foil with chemical vapor deposition was transferred onto intentionally undoped GaN epilayer to form a graphene/GaN Schottky junction. Graphite 11-19 gigaxonin Homo sapiens 111-114 25567005-1 2015 Large-area graphene grown on Cu foil with chemical vapor deposition was transferred onto intentionally undoped GaN epilayer to form a graphene/GaN Schottky junction. Graphite 11-19 gigaxonin Homo sapiens 143-146 25567005-1 2015 Large-area graphene grown on Cu foil with chemical vapor deposition was transferred onto intentionally undoped GaN epilayer to form a graphene/GaN Schottky junction. Graphite 134-142 gigaxonin Homo sapiens 111-114 25567005-1 2015 Large-area graphene grown on Cu foil with chemical vapor deposition was transferred onto intentionally undoped GaN epilayer to form a graphene/GaN Schottky junction. Graphite 134-142 gigaxonin Homo sapiens 143-146 23305126-1 2013 This paper reports on the evaluation of the impact of introducing interlayers and postmetallization annealing on the graphene/p-GaN ohmic contact formation and performance of associated devices. Graphite 117-125 gigaxonin Homo sapiens 128-131 24946753-0 2014 Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale. Graphite 21-29 gigaxonin Homo sapiens 32-35 24164686-0 2013 Synthesis, microstructure, and cathodoluminescence of [0001]-oriented GaN nanorods grown on conductive graphite substrate. Graphite 103-111 gigaxonin Homo sapiens 70-73 24164686-1 2013 One-dimensional GaN nanorods with corrugated morphology have been synthesized on graphite substrate without the assistance of any metal catalyst through a feasible thermal evaporation process. Graphite 81-89 gigaxonin Homo sapiens 16-19 23305126-3 2013 Direct graphene/p-GaN interface was identified to be highly rectifying and postmetallization annealing improved the contact characteristics as a result of improved adhesion between the graphene and the p-GaN. Graphite 7-15 gigaxonin Homo sapiens 18-21 23305126-3 2013 Direct graphene/p-GaN interface was identified to be highly rectifying and postmetallization annealing improved the contact characteristics as a result of improved adhesion between the graphene and the p-GaN. Graphite 7-15 gigaxonin Homo sapiens 204-207 23305126-3 2013 Direct graphene/p-GaN interface was identified to be highly rectifying and postmetallization annealing improved the contact characteristics as a result of improved adhesion between the graphene and the p-GaN. Graphite 185-193 gigaxonin Homo sapiens 18-21 23305126-3 2013 Direct graphene/p-GaN interface was identified to be highly rectifying and postmetallization annealing improved the contact characteristics as a result of improved adhesion between the graphene and the p-GaN. Graphite 185-193 gigaxonin Homo sapiens 204-207 23305126-5 2013 Temperature-dependent I-V measurements revealed that the current transport was modified from thermionic field emission for the direct graphene/p-GaN contact to tunneling for the graphene/metal/p-GaN contacts. Graphite 134-142 gigaxonin Homo sapiens 145-148 23305126-5 2013 Temperature-dependent I-V measurements revealed that the current transport was modified from thermionic field emission for the direct graphene/p-GaN contact to tunneling for the graphene/metal/p-GaN contacts. Graphite 134-142 gigaxonin Homo sapiens 195-198 23305126-5 2013 Temperature-dependent I-V measurements revealed that the current transport was modified from thermionic field emission for the direct graphene/p-GaN contact to tunneling for the graphene/metal/p-GaN contacts. Graphite 178-186 gigaxonin Homo sapiens 145-148 23305126-5 2013 Temperature-dependent I-V measurements revealed that the current transport was modified from thermionic field emission for the direct graphene/p-GaN contact to tunneling for the graphene/metal/p-GaN contacts. Graphite 178-186 gigaxonin Homo sapiens 195-198 23305126-7 2013 InGaN/GaN light-emitting diodes with NiO(x)/graphene current spreading electrode offered a forward voltage of 3.16 V comparable to that of its Ni/Au counterpart, but ended up with relatively low light output power. Graphite 44-52 gigaxonin Homo sapiens 2-5 22213372-0 2012 Microstructures of GaN thin films grown on graphene layers. Graphite 43-51 gigaxonin Homo sapiens 19-22 22213372-1 2012 Plan-view and cross-sectional transmission electron microscopy images show the microstructural properties of GaN thin films grown on graphene layers, including dislocation types and density, crystalline orientation and grain boundaries. Graphite 133-141 gigaxonin Homo sapiens 109-112 22213372-2 2012 The roles of ZnO nanowalls and GaN intermediate layers in the heteroepitaxial growth of GaN on graphene, revealed by cross-sectional transmission electron microscopy, are also discussed. Graphite 95-103 gigaxonin Homo sapiens 88-91 34914401-2 2021 On the basis of first-principles calculation, we revealed that a two-dimensional gallium nitride (2D-GaN), which was recently synthesized between graphene and SiC or wurtzite GaN substrate, exhibits half-metallicity due to its half-filled quasi-flat band. Graphite 146-154 gigaxonin Homo sapiens 101-104 22121700-0 2011 Performance of GaN vertical light emitting diodes using wafer bonding process with Al-alloyed graphite substrate. Graphite 94-102 gigaxonin Homo sapiens 15-18 20368676-0 2010 Large-scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodes. Graphite 34-42 gigaxonin Homo sapiens 90-93 20368676-1 2010 This work demonstrates a large-scale batch fabrication of GaN light-emitting diodes (LEDs) with patterned multi-layer graphene (MLG) as transparent conducting electrodes. Graphite 118-126 gigaxonin Homo sapiens 58-61 33875111-0 2021 Plasmon-Enhanced Ultraviolet Photoluminescence from the Graphene/GaN Nanofilm. Graphite 56-64 gigaxonin Homo sapiens 65-68 34811457-1 2021 We report on morphology-controlled remote epitaxy via hydrothermal growth of ZnO micro- and nanostructure crystals on graphene-coated GaN substrate. Graphite 118-126 gigaxonin Homo sapiens 134-137 34811457-3 2021 Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene. Graphite 57-65 gigaxonin Homo sapiens 73-76 34811457-3 2021 Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene. Graphite 57-65 gigaxonin Homo sapiens 258-261 34811457-3 2021 Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene. Graphite 185-193 gigaxonin Homo sapiens 194-197 34811457-3 2021 Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene. Graphite 185-193 gigaxonin Homo sapiens 258-261 34811457-3 2021 Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene. Graphite 269-277 gigaxonin Homo sapiens 194-197 34811457-3 2021 Although the growth of ZnO is carried out on poly-domain graphene-coated GaN substrate, the direction of hexagonal sidewall facet of ZnO is homogeneous over the whole ZnO-grown area on graphene/GaN because of strong remote epitaxial relation between ZnO and GaN across graphene. Graphite 269-277 gigaxonin Homo sapiens 258-261 33875111-2 2021 Herein, a hybrid structure of graphene/GaN nanofilm was designed and fabricated to investigate the photoluminescence (PL) performance and the coupling dynamics. Graphite 30-38 gigaxonin Homo sapiens 39-42 33875111-3 2021 It is demonstrated that the resonant coupling between graphene SPs and GaN exciton emission is responsible for the substantially enhanced PL from the structure of graphene/GaN nanofilm. Graphite 163-171 gigaxonin Homo sapiens 71-74 33875111-3 2021 It is demonstrated that the resonant coupling between graphene SPs and GaN exciton emission is responsible for the substantially enhanced PL from the structure of graphene/GaN nanofilm. Graphite 163-171 gigaxonin Homo sapiens 172-175