| 1 |
35387996 | Quantum dot-integrated GaN light-emitting diodes with resolution beyond the retinal limit. | 2022 Apr 6 |
1 |
| 2 |
33510188 | The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs. | 2021 Jan 28 |
1 |
| 3 |
34613168 | Ellipsometric and first-principles study on temperature-dependent UV-Vis dielectric functions of GaN. | 2021 Aug 10 |
1 |
| 4 |
32213675 | Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: up to the solubility limit and beyond. | 2020 May 1 |
3 |
| 5 |
30704131 | Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor. | 2019 Jan 30 |
1 |
| 6 |
31385709 | Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy. | 2019 Sep 11 |
1 |
| 7 |
31483596 | Interfacial Tailoring for the Suppression of Impurities in GaN by In Situ Plasma Pretreatment via Atomic Layer Deposition. | 2019 Sep 25 |
4 |
| 8 |
29603996 | GaN microring waveguide resonators bonded to silicon substrate by a two-step polymer process. | 2018 Mar 20 |
7 |
| 9 |
29642435 | Effects of Nâ‚‚ Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy. | 2018 Apr 7 |
1 |
| 10 |
30544659 | Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN. | 2018 Dec 10 |
2 |
| 11 |
33101720 | Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates. | 2018 |
2 |
| 12 |
28833605 | Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si. | 2017 Oct |
7 |
| 13 |
29118412 | Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates. | 2017 Nov 8 |
2 |
| 14 |
26902654 | Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructures. | 2016 Apr 8 |
1 |
| 15 |
27505731 | Laser damage mechanisms in conductive widegap semiconductor films. | 2016 Aug 8 |
2 |
| 16 |
27505739 | Performance of GaN-on-Si-based vertical light-emitting diodes using silicon nitride electrodes with conducting filaments: correlation between filament density and device reliability. | 2016 Aug 8 |
1 |
| 17 |
25654749 | Formation and nature of InGaN quantum dots in GaN nanowires. | 2015 Mar 11 |
1 |
| 18 |
25758029 | High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111). | 2015 Apr 8 |
2 |
| 19 |
26004038 | Spectroscopic XPEEM of highly conductive SI-doped GaN wires. | 2015 Dec |
1 |
| 20 |
26028318 | Ultraviolet photoconductive devices with an n-GaN nanorod-graphene hybrid structure synthesized by metal-organic chemical vapor deposition. | 2015 Jun 1 |
1 |
| 21 |
26046390 | Surface-Effect-Induced Optical Bandgap Shrinkage in GaN Nanotubes. | 2015 Jul 8 |
1 |
| 22 |
26373120 | Comparison of Strain in GaN-Based Blue Light-Emitting Diode Grown on Silicon(111) and Sapphire Substrates. | 2015 Jul |
4 |
| 23 |
26563573 | Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures. | 2015 Nov 13 |
1 |
| 24 |
24826797 | Photoinduced conversion of methane into benzene over GaN nanowires. | 2014 Jun 4 |
2 |
| 25 |
24837761 | Direct imaging of p-n junction in core-shell GaN wires. | 2014 Jun 11 |
1 |
| 26 |
25121911 | Experimental observation of lateral emission in freestanding GaN-based membrane devices. | 2014 Aug 15 |
1 |
| 27 |
25327280 | Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence. | 2014 Nov 14 |
1 |
| 28 |
23373938 | Blocking growth by an electrically active subsurface layer: the effect of Si as an antisurfactant in the growth of GaN. | 2013 Jan 18 |
2 |
| 29 |
24369453 | Effect of same-temperature GaN cap layer on the InGaN/GaN multiquantum well of green light-emitting diode on silicon substrate. | 2013 |
3 |
| 30 |
22460768 | Electrochemical properties of GaN nanowire electrodes--influence of doping and control by external bias. | 2012 Apr 27 |
1 |
| 31 |
23130785 | Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity. | 2012 Dec 12 |
2 |
| 32 |
21705828 | Growth of axial SiGe heterostructures in nanowires using pulsed laser deposition. | 2011 Jul 29 |
1 |
| 33 |
21747567 | Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper. | 2011 Jul 4 |
1 |
| 34 |
22109019 | Single n-GaN microwire/p-Silicon thin film heterojunction light-emitting diode. | 2011 Oct 24 |
2 |
| 35 |
21832611 | Gallium nitride heterostructures on 3DÂ structured silicon. | 2008 Oct 8 |
1 |
| 36 |
12639240 | Cathodoluminescence efficiency dependence on excitation density in n-type gallium nitride. | 2003 Apr |
1 |