| 1 |
35208294 | Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted Gate Using TCAD Simulation. | 2022 Jan 22 |
3 |
| 2 |
35629563 | Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance. | 2022 May 14 |
1 |
| 3 |
33555173 | Intrinsic Polarization-Induced Enhanced Ferromagnetism and Self-Doped p-n Junctions in CrBr3/GaN van der Waals Heterostructures. | 2021 Feb 24 |
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| 4 |
33803174 | Nitrogen Dissolution in Liquid Ga and Fe: Comprehensive Ab Initio Analysis, Relevance for Crystallization of GaN. | 2021 Mar 9 |
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| 5 |
34069925 | Fabrication of All-GaN Integrated MIS-HEMTs with High Threshold Voltage Stability Using Supercritical Technology. | 2021 May 18 |
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| 6 |
34259497 | Epitaxial Molybdenum Disulfide/Gallium Nitride Junctions: Low-Knee-Voltage Schottky-Diode Behavior at Optimized Interfaces. | 2021 Jul 28 |
1 |
| 7 |
34399419 | Influence of environmental conditions and surface treatments on the photoluminescence properties of GaN nanowires and nanofins. | 2021 Sep 14 |
1 |
| 8 |
34504143 | Smart-cut-like laser slicing of GaN substrate using its own nitrogen. | 2021 Sep 9 |
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| 9 |
32711626 | High Performance p-GaN/Oxide Layer/n-GaN Ultraviolet Detector Fabricated by Directly Contacting Method. | 2020 Dec 1 |
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| 10 |
33004847 | Thermal neutron transmutation doping of GaN semiconductors. | 2020 Oct 1 |
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| 11 |
31241343 | Role of Ga Surface Diffusion in the Elongation Mechanism and Optical Properties of Catalyst-Free GaN Nanowires Grown by Molecular Beam Epitaxy. | 2019 Jul 10 |
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| 12 |
29642435 | Effects of N₂ Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy. | 2018 Apr 7 |
2 |
| 13 |
29109806 | Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates. | 2017 |
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| 14 |
27459343 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices. | 2016 Aug 17 |
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| 15 |
25412649 | Extraordinary N atom tunneling in formation of InN shell layer on GaN nanorod m-plane sidewall. | 2014 Dec 12 |
1 |
| 16 |
23918223 | Effects of trimethylaluminium and tetrakis(ethylmethylamino) hafnium in the early stages of the atomic-layer-deposition of aluminum oxide and hafnium oxide on hydroxylated GaN nanoclusters. | 2013 Oct |
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| 17 |
23215512 | Identification of the nitrogen split interstitial (N-N)(N) in GaN. | 2012 Nov 16 |
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| 18 |
21137731 | Light extraction efficiency enhancement of GaN-based light emitting diodes on n-GaN layer using a SiO2 photonic quasi-crystal overgrowth. | 2010 Oct |
2 |
| 19 |
19928283 | Nitrogen ion induced 2D-GaN layer formation of GaAs (001) surface. | 2009 Sep |
2 |
| 20 |
21727512 | Optical properties and carrier dynamics of self-assembled GaN/Al(0.11)Ga(0.89)N quantum dots. | 2006 May 28 |
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| 21 |
12190488 | Effects of hydrogen on the electronic properties of dilute GaAsN alloys. | 2002 Aug 19 |
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| 22 |
12398616 | Giant magnetic moments of nitrogen-doped Mn clusters and their relevance to ferromagnetism in Mn-doped GaN. | 2002 Oct 28 |
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