PMID-sentid Pub_year Sent_text compound_name comp_offset prot_official_name organism prot_offset 14580898-0 2003 Expression of Clara cell secretory protein in the lungs of rats exposed to silicon carbide whisker in vivo. silicon carbide 75-90 secretoglobin family 1A member 1 Rattus norvegicus 14-42 16721464-10 2006 Brackets recycled by the specialized company (0.28 kgf/mm2) and those recycled by silicon carbide stone grinding (0.14 kgf/mm2) showed the lowest shear strength means and differed statistically from control brackets (0.52 kgf/mm2) (p<0.05). silicon carbide 82-97 PNMA family member 2 Homo sapiens 123-126 16721464-10 2006 Brackets recycled by the specialized company (0.28 kgf/mm2) and those recycled by silicon carbide stone grinding (0.14 kgf/mm2) showed the lowest shear strength means and differed statistically from control brackets (0.52 kgf/mm2) (p<0.05). silicon carbide 82-97 PNMA family member 2 Homo sapiens 123-126 16290640-1 2002 We used an atomic force microscope to investigate silicon nitride tip interactions with various materials (copper, nickel, silicon carbide) as a function of pH. silicon carbide 123-138 TOR signaling pathway regulator Homo sapiens 66-69 14646272-0 2003 Gene expression of surfactant protein-A and thyroid transcription factor-1 in lungs of rats exposed to silicon-carbide whisker in vivo. silicon carbide 103-118 transcription termination factor 1 Rattus norvegicus 44-74 14571490-1 2003 Silicon carbide (aSIC-C) is a stent coating with antithrombogenic as well as anti-inflammatory properties as compared with uncoated stainless steal based on in vitro and in vivo studies. silicon carbide 0-15 acid sensing ion channel subunit 1 Homo sapiens 17-21 1396444-5 1992 On stimulation of the lungs with an inert dust (silicon carbide), the AM count in the BAL and the lung was only slightly increased 8 weeks after intratracheal instillation. silicon carbide 48-63 solute carrier family 27 member 5 Rattus norvegicus 86-89 9400730-3 1997 The amount of TNF produced by macrophages in vitro depended on the fiber type, with the man-made vitreous fibers, and refractory ceramic fibers being least stimulatory and silicon carbide (SiC) whiskers providing the greatest stimulation. silicon carbide 172-187 tumor necrosis factor Homo sapiens 14-17 34137419-3 2021 By introducing C defects, we have successfully converted the semi-conductive SiC into metallic carbon-defective silicon carbide (SiC1-x), and endowed it with the near infrared absorption property for photothermal therapy (PTT). silicon carbide 112-127 Fli-1 proto-oncogene, ETS transcription factor Homo sapiens 129-133 34732705-0 2021 Stability and molecular pathways to the formation of spin defects in silicon carbide. silicon carbide 69-84 spindlin 1 Homo sapiens 53-57 34732705-3 2021 Here, we elucidate spin defect formation processes in a binary crystal for a key qubit candidate-the divacancy complex (VV) in silicon carbide (SiC). silicon carbide 127-142 spindlin 1 Homo sapiens 19-23 34732705-3 2021 Here, we elucidate spin defect formation processes in a binary crystal for a key qubit candidate-the divacancy complex (VV) in silicon carbide (SiC). silicon carbide 144-147 spindlin 1 Homo sapiens 19-23 34620847-0 2021 Author Correction: Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide. silicon carbide 127-142 spindlin 1 Homo sapiens 19-23 34639976-0 2021 Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms. silicon carbide 41-56 spindlin 1 Homo sapiens 0-4 34564531-0 2021 Ceramic Processing of Silicon Carbide Membranes with the Aid of Aluminum Nitrate Nonahydrate: Preparation, Characterization, and Performance. silicon carbide 22-37 activation induced cytidine deaminase Homo sapiens 57-60 34903793-0 2021 The spin-dependent properties of silicon carbide/graphene nanoribbons junctions with vacancy defects. silicon carbide 33-48 spindlin 1 Homo sapiens 4-8 34903793-1 2021 We have designed high-efficient spin-filtering junctions composed of graphene and silicon carbide nanoribbons. silicon carbide 82-97 spindlin 1 Homo sapiens 32-36 34777909-3 2021 The procedure was applied to synthesize GaPt-SCALMS catalyst on silica (SiO2), alumina (Al2O3), and silicon carbide (SiC) to investigate the effect of the support material on the catalytic performance. silicon carbide 100-115 GRB2 binding adaptor protein, transmembrane Homo sapiens 40-44 34777909-3 2021 The procedure was applied to synthesize GaPt-SCALMS catalyst on silica (SiO2), alumina (Al2O3), and silicon carbide (SiC) to investigate the effect of the support material on the catalytic performance. silicon carbide 117-120 GRB2 binding adaptor protein, transmembrane Homo sapiens 40-44 32955339-0 2020 Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room Temperature. silicon carbide 39-54 spindlin 1 Homo sapiens 12-16 35477934-0 2022 Structure and density of silicon carbide to 1.5 TPa and implications for extrasolar planets. silicon carbide 25-40 plasminogen activator, tissue type Homo sapiens 48-51 414831-3 1978 Wounding mouse skin, either by multiple scalpel incisions or by stripping with silicon carbide paper, led to a marked induction of ornithine decarboxylase activity. silicon carbide 79-94 ornithine decarboxylase, structural 1 Mus musculus 131-154 35057303-2 2022 The influence of the silicon carbide nanoparticles (SCN) on the friction-wear characteristics of copper-based friction materials (CBFM) is investigated via the SAE#2 (made in Hangzhou, China) clutch bench test with the applied pressure, rotating speed, and automatic transmission fluid (ATF) temperature taken into account. silicon carbide 21-36 RB binding protein 8, endonuclease Homo sapiens 160-165 281506-5 1978 The smoothest surface for Aspa was obtained with a silicon carbide disk. silicon carbide 51-66 aspartoacylase Homo sapiens 26-30 32955339-1 2020 We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. silicon carbide 76-91 spindlin 1 Homo sapiens 33-37 32955339-6 2020 These results establish silicon carbide as a highly promising hybrid platform for on-chip spin-optomechanical quantum control enabling engineered interactions at room temperature. silicon carbide 24-39 spindlin 1 Homo sapiens 90-94 32433556-0 2020 Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide. silicon carbide 108-123 spindlin 1 Homo sapiens 0-4 32126633-4 2020 It was found that the staphylococcal protein A (SPA) is more likely to attach on the surface of silicon carbide (SiC) substrate than hematite (Fe2O3) substrate surface. silicon carbide 96-111 surfactant protein A2 Homo sapiens 22-46 32126633-4 2020 It was found that the staphylococcal protein A (SPA) is more likely to attach on the surface of silicon carbide (SiC) substrate than hematite (Fe2O3) substrate surface. silicon carbide 96-111 surfactant protein A2 Homo sapiens 48-51 32126633-4 2020 It was found that the staphylococcal protein A (SPA) is more likely to attach on the surface of silicon carbide (SiC) substrate than hematite (Fe2O3) substrate surface. silicon carbide 113-116 surfactant protein A2 Homo sapiens 22-46 32126633-4 2020 It was found that the staphylococcal protein A (SPA) is more likely to attach on the surface of silicon carbide (SiC) substrate than hematite (Fe2O3) substrate surface. silicon carbide 113-116 surfactant protein A2 Homo sapiens 48-51 32433556-6 2020 Our results provide a deep insight into the system"s spin-phonon-photon physics and underline the potential of the industrially compatible silicon carbide platform for measurement-based entanglement distribution and photonic cluster state generation. silicon carbide 139-154 spindlin 1 Homo sapiens 53-57 28531988-2 2017 The surface frame of Si and SiC nanoparticles were comminuted by XRD, TEM, SEM, and BET. silicon carbide 28-31 delta/notch like EGF repeat containing Homo sapiens 84-87 32213675-0 2020 Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: up to the solubility limit and beyond. silicon carbide 59-62 gigaxonin Homo sapiens 36-39 31806809-1 2019 Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. silicon carbide 16-31 spindlin 1 Homo sapiens 0-4 31806809-1 2019 Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. silicon carbide 16-31 spindlin 1 Homo sapiens 75-79 31806809-1 2019 Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. silicon carbide 16-31 spindlin 1 Homo sapiens 120-124 31764933-3 2019 Herein, we solve this stabilization problem by designing a Si/silicon carbide/nanographite sheet (Si/SiC/NanoG) nanocomposite. silicon carbide 62-77 Nanog homeobox Homo sapiens 105-110 31358226-5 2019 The obtained Si@C microspheres are employed to prepare the chemically modified electrode for the sensitive determination of Cd(II) and Pb(II). silicon carbide 13-17 submaxillary gland androgen regulated protein 3B Homo sapiens 135-141 31532999-4 2019 Here, we investigate charge state manipulation of individual silicon vacancies in silicon carbide, a system which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions. silicon carbide 82-97 spindlin 1 Homo sapiens 162-166 31532999-4 2019 Here, we investigate charge state manipulation of individual silicon vacancies in silicon carbide, a system which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions. silicon carbide 82-97 spindlin 1 Homo sapiens 198-202 29565362-5 2018 Alternative materials are therefore required to achieve continuous emission: inorganic materials that contain spin defects, such as diamond and silicon carbide, have been proposed. silicon carbide 144-159 spindlin 1 Homo sapiens 110-114 31302587-5 2019 The reaction pathway was revealed as follows: under the attack of free electrons, chlorine atoms were shed from the benzene rings of HCB to form Cl radicals, which reacted with SiC to form SiCl4 and CCl4 and with the in situ-generated iron powder to produce Fe-based chloride. silicon carbide 178-181 C-C motif chemokine ligand 4 Homo sapiens 200-204 29192288-1 2017 Defects in silicon carbide (SiC) have emerged as a favorable platform for optically active spin-based quantum technologies. silicon carbide 11-26 spindlin 1 Homo sapiens 91-95 29192288-1 2017 Defects in silicon carbide (SiC) have emerged as a favorable platform for optically active spin-based quantum technologies. silicon carbide 28-31 spindlin 1 Homo sapiens 91-95 24188400-1 2013 We employ tip-enhanced infrared near-field microscopy to study the plasmonic properties of epitaxial quasi-free-standing monolayer graphene on silicon carbide. silicon carbide 143-158 TOR signaling pathway regulator Homo sapiens 10-13 27861163-0 2016 Spin-photon entanglement interfaces in silicon carbide defect centers. silicon carbide 39-54 spindlin 1 Homo sapiens 0-4 27195950-1 2016 Silicon carbide (SiC), titanium carbide (TiC), zirconium carbide (ZrC), and tantalum carbide (TaC) have been electrochemically produced directly from their corresponding stoichiometric metal oxides/carbon (MOx/C) precursors by electrodeoxidation in molten calcium chloride (CaCl2). silicon carbide 0-15 monooxygenase DBH like 1 Homo sapiens 206-209 25668493-8 2015 The Si-C binding energy differs according to (C1-9)-Si NW > (C14-18)-Si NW, i.e., the shorter the alkyl chain, the greater the Si-C binding energy. silicon carbide 4-8 heterogeneous nuclear ribonucleoprotein C Homo sapiens 46-50 25668493-8 2015 The Si-C binding energy differs according to (C1-9)-Si NW > (C14-18)-Si NW, i.e., the shorter the alkyl chain, the greater the Si-C binding energy. silicon carbide 130-134 heterogeneous nuclear ribonucleoprotein C Homo sapiens 46-50 24993103-3 2014 We identified several, separately addressable spin-3/2 centers in the same silicon carbide crystal, which are immune to nonaxial strain fluctuations. silicon carbide 75-90 spindlin family member 3 Homo sapiens 46-52 20055479-7 2010 A mixture of SiC and SiO(2) nanoparticles yields high performance cooling at low cost within a practical cooling rig. silicon carbide 13-16 dickkopf WNT signaling pathway inhibitor 3 Homo sapiens 113-116 22727848-0 2012 Spin-lattice relaxation in aluminum-doped semiconducting 4H and 6H polytypes of silicon carbide. silicon carbide 80-95 spindlin 1 Homo sapiens 0-4