PMID-sentid Pub_year Sent_text comp_official_name comp_offsetprotein_name organism prot_offset 32672165-5 2020 By contrast, the Vf at 20 A/cm2 in the TJ microLEDs utilizing SAG is significantly reduced to be 3.24 to 3.31 V. Moreover, the Vf in the SAG TJ microLEDs is independent on sizes, suggesting that the hydrogen is effectively removed through the holes on top of the p-GaN surface by SAG. Hydrogen 199-207 gigaxonin Homo sapiens 265-268 30889560-3 2019 Upon hydrogen exposure, the molecular adsorption tuned the barrier height at the MoS2/GaN interface under the reverse biased condition, thus resulting in high sensitivity. Hydrogen 5-13 gigaxonin Homo sapiens 86-89 32040646-0 2020 Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN. Hydrogen 0-8 gigaxonin Homo sapiens 53-56 32040646-1 2020 The effect of unintentionally doped hydrogen on the properties of Mg-doped p-GaN samples grown via metal-organic chemical vapor deposition (MOCVD) is investigated through room temperature photoluminescence (PL) and Hall and secondary ion mass spectroscopy (SIMS) measurements. Hydrogen 36-44 gigaxonin Homo sapiens 77-80 32040646-5 2020 This suggests that the co-doped hydrogen not only passivate MgGa, but also can passivate carbon impurities in Mg-doped p-GaN. Hydrogen 32-40 gigaxonin Homo sapiens 121-124 30889560-6 2019 The sensing mechanism was demonstrated based on an energy band diagram at the MoS2/GaN interface in the presence and absence of hydrogen exposure. Hydrogen 128-136 gigaxonin Homo sapiens 83-86 30889560-0 2019 A high-performance hydrogen sensor based on a reverse-biased MoS2/GaN heterojunction. Hydrogen 19-27 gigaxonin Homo sapiens 66-69 26815407-1 2016 (GaN)1-x(ZnO)x solid-solution nanostructures with superior crystallinity, large surface areas and visible light absorption have been regarded as promising photocatalysts for overall water splitting to produce H2. Hydrogen 209-211 gigaxonin Homo sapiens 1-4 28430238-2 2017 The hydrogen-environment thermal etching performed well in undercutting the AlGaN microdisks owing to the selective etching for the GaN layer. Hydrogen 4-12 gigaxonin Homo sapiens 78-81 26815407-6 2016 The efficiency and versatility of our strategy in the band-gap and facet engineering of (GaN)1-x(ZnO)x solid-solution nanorods will enhance their promising photocatalytic utilizations like an overall water splitting for H2 production under visible-light irradiation. Hydrogen 220-222 gigaxonin Homo sapiens 89-92 26319330-0 2015 Pt-decorated GaN nanowires with significant improvement in H2 gas-sensing performance at room temperature. Hydrogen 59-61 gigaxonin Homo sapiens 13-16 26319330-1 2015 Superior sensitivity towards H2 gas was successfully achieved with Pt-decorated GaN nanowires (NWs) gas sensor. Hydrogen 29-31 gigaxonin Homo sapiens 80-83 26319330-4 2015 The Pt-decorated GaN NWs sensor shows a high response of 250-2650% upon exposure to H2 gas concentration from 7 to 1000ppm respectively at room temperature (RT), and then increases to about 650-4100% when increasing the operating temperature up to 75 C. The gas-sensing measurements indicated that the Pt-decorated GaN NWs based sensor exhibited efficient detection of H2 at low concentration with excellent sensitivity, repeatability, and free hysteresis phenomena over a period of time of 100min. Hydrogen 84-86 gigaxonin Homo sapiens 17-20 26319330-4 2015 The Pt-decorated GaN NWs sensor shows a high response of 250-2650% upon exposure to H2 gas concentration from 7 to 1000ppm respectively at room temperature (RT), and then increases to about 650-4100% when increasing the operating temperature up to 75 C. The gas-sensing measurements indicated that the Pt-decorated GaN NWs based sensor exhibited efficient detection of H2 at low concentration with excellent sensitivity, repeatability, and free hysteresis phenomena over a period of time of 100min. Hydrogen 369-371 gigaxonin Homo sapiens 17-20 26319330-5 2015 The large surface-to-volume ratio of GaN NWs and the catalytic activity of Pt metal are the most influential factors leading to the enhancement of H2 gas-sensing performances through the improvement of the interaction between the target molecules (H2) and the sensing NWs surface. Hydrogen 147-149 gigaxonin Homo sapiens 37-40 26319330-5 2015 The large surface-to-volume ratio of GaN NWs and the catalytic activity of Pt metal are the most influential factors leading to the enhancement of H2 gas-sensing performances through the improvement of the interaction between the target molecules (H2) and the sensing NWs surface. Hydrogen 248-250 gigaxonin Homo sapiens 37-40 26319330-6 2015 The attractive low-cost, low power consumption and high-performance of the resultant decorated GaN NWs gas sensor assure their uppermost potential for H2 gas sensor working at low operating temperature. Hydrogen 151-153 gigaxonin Homo sapiens 95-98 23324138-0 2013 Growth of beta-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation. Hydrogen 71-79 gigaxonin Homo sapiens 25-28 24826797-3 2014 Herein we demonstrate that Si-doped GaN nanowires (NWs) with a 97% rationally constructed m-plane can directly convert methane into benzene and molecular hydrogen under ultraviolet (UV) illumination at rt. Hydrogen 154-162 gigaxonin Homo sapiens 36-39 23324138-0 2013 Growth of beta-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation. Hydrogen 71-79 gigaxonin Homo sapiens 42-45 23037534-4 2012 Under the visible light illumination and a bias voltage below 1.2 V, the Mn-doped GaN photoelectrodes could drive the water splitting reaction for hydrogen generation. Hydrogen 147-155 gigaxonin Homo sapiens 82-85 23037534-5 2012 However, hydrogen generation could not be achieved under the same condition wherein undoped GaN photoelectrodes were used. Hydrogen 9-17 gigaxonin Homo sapiens 92-95 21711801-3 2011 Increasing the H2 content leads to an increase in the growth rate, a reduction in the areal density of the GaN NWs and a suppression of the underlying amorphous (alpha)-like GaN layer which occurs without H2. Hydrogen 15-17 gigaxonin Homo sapiens 107-110 23037534-1 2012 Hydrogen generation through direct photoelectrolysis of water was studied using photoelectrochemical (PEC) cells made of Mn-doped GaN photoelectrodes. Hydrogen 0-8 gigaxonin Homo sapiens 130-133 21711801-3 2011 Increasing the H2 content leads to an increase in the growth rate, a reduction in the areal density of the GaN NWs and a suppression of the underlying amorphous (alpha)-like GaN layer which occurs without H2. Hydrogen 15-17 gigaxonin Homo sapiens 174-177 21711801-4 2011 The increase in growth rate with H2 content is a direct consequence of the reaction of Ga with H2 which leads to the formation of Ga hydride that reacts efficiently with NH3 at the top of the GaN NWs. Hydrogen 33-35 gigaxonin Homo sapiens 192-195 21711801-4 2011 The increase in growth rate with H2 content is a direct consequence of the reaction of Ga with H2 which leads to the formation of Ga hydride that reacts efficiently with NH3 at the top of the GaN NWs. Hydrogen 95-97 gigaxonin Homo sapiens 192-195 21711801-5 2011 Moreover, the reduction in the areal density of the GaN NWs and suppression of the alpha-like GaN layer is attributed to the reaction of H2 with Ga in the immediate vicinity of the Au NPs. Hydrogen 137-139 gigaxonin Homo sapiens 52-55 21711801-5 2011 Moreover, the reduction in the areal density of the GaN NWs and suppression of the alpha-like GaN layer is attributed to the reaction of H2 with Ga in the immediate vicinity of the Au NPs. Hydrogen 137-139 gigaxonin Homo sapiens 94-97 17302499-0 2007 Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n-type GaN. Hydrogen 34-36 gigaxonin Homo sapiens 106-109 16952251-2 2006 GaN(0001) surfaces exposed to a hydrogen plasma will react with organic molecules bearing an alkene (C=C) group when illuminated with 254 nm light. Hydrogen 32-40 gigaxonin Homo sapiens 0-3 12190488-2 2002 It is, however, not recognized that the same amount of N can also qualitatively alter the electronic behavior of hydrogen: First-principles calculations reveal that, in GaAsN, a H atom bonds to N and can act as a donor in its own right, whereas in GaAs and GaN, H is amphoteric, causing passivation instead. Hydrogen 113-121 gigaxonin Homo sapiens 257-260