PMID-sentid	Pub_year	Sent_text		comp_official_name	comp_offsetprotein_name	organism	prot_offset
20947945-1	2010	A new process for making single crystalline undoped and Ga-doped ZnS nanowires with simple evaporation and condensation procedures on Si and GaN is introduced.	Zinc	65-68	gigaxonin	Homo sapiens	141-144	
23368341-5	2012	The neutral Zn impurity site together with a N vacancy is considered as the carrier-capturing deep impurity level in bulk GaN.	Zinc	12-14	gigaxonin	Homo sapiens	122-125	
16771564-1	2006	We present a study of the light extraction from CdSe/ZnS core/shell colloidal quantum dot thin films deposited on quantum well InGaN/GaN photonic crystal structures.	Zinc	53-56	gigaxonin	Homo sapiens	129-132	
19049196-4	2008	The X-ray diffraction analysis shows that the crystalline size of pure ZnO is 36 nm and it is 41 nm while doped with 0.8 mol% of GaN due to best stoichiometry between Zn and O. Photoluminescence studies reveal that intense deep level emissions have been observed for pure ZnO and it has been suppressed for the GaN doped ZnO structures.	Zinc	71-73	gigaxonin	Homo sapiens	129-132	
19049196-4	2008	The X-ray diffraction analysis shows that the crystalline size of pure ZnO is 36 nm and it is 41 nm while doped with 0.8 mol% of GaN due to best stoichiometry between Zn and O. Photoluminescence studies reveal that intense deep level emissions have been observed for pure ZnO and it has been suppressed for the GaN doped ZnO structures.	Zinc	71-73	gigaxonin	Homo sapiens	311-314	
33524916-0	2021	Electron energy loss spectroscopy and first-principles study of GaN via Zn doping.	Zinc	72-74	gigaxonin	Homo sapiens	64-67	
33524916-1	2021	The electronic structure of GaN and GaN:Zn was investigated by electron energy loss spectroscopy and first-principles calculations.	Zinc	40-42	gigaxonin	Homo sapiens	36-39	
33524916-5	2021	A core-hole effect is believed to be significant for simulation of the N K-edge for both GaN and GaN:Zn.	Zinc	101-103	gigaxonin	Homo sapiens	97-100	
28957153-4	2017	Due to the insertion of ZnO films, the diffraction peak intensity of ZnS:Mn in ZnS:Mn/ZnO/GaN is stronger than that of ZnS:Mn in ZnS:Mn/GaN, and the full width at half-maximum is smaller.	Zinc	69-72	gigaxonin	Homo sapiens	90-93	
28957153-4	2017	Due to the insertion of ZnO films, the diffraction peak intensity of ZnS:Mn in ZnS:Mn/ZnO/GaN is stronger than that of ZnS:Mn in ZnS:Mn/GaN, and the full width at half-maximum is smaller.	Zinc	69-72	gigaxonin	Homo sapiens	136-139	
28957153-4	2017	Due to the insertion of ZnO films, the diffraction peak intensity of ZnS:Mn in ZnS:Mn/ZnO/GaN is stronger than that of ZnS:Mn in ZnS:Mn/GaN, and the full width at half-maximum is smaller.	Zinc	79-82	gigaxonin	Homo sapiens	90-93	
28957153-8	2017	The PL spectrum of ZnS:Mn/ZnO/GaN covers the visible region from the blue light to the red light (400-700 nm), and its color coordinate and color temperature are (0.3103,0.3063) and 6869 K, respectively, presenting strong white light emission.	Zinc	19-22	gigaxonin	Homo sapiens	30-33