PMID-sentid	Pub_year	Sent_text		comp_official_name	comp_offsetprotein_name	organism	prot_offset
25936066-2	2014	Wet etched self-assembled indium tin oxide (ITO) nano clusters serves as dry etching mask for converting the SiO2 layer grown on n-GaN template into SiO2 nano dots by inductively coupled plasma etching.	indium tin oxide	26-42	gigaxonin	Homo sapiens	131-134	
25936066-2	2014	Wet etched self-assembled indium tin oxide (ITO) nano clusters serves as dry etching mask for converting the SiO2 layer grown on n-GaN template into SiO2 nano dots by inductively coupled plasma etching.	indium tin oxide	44-47	gigaxonin	Homo sapiens	131-134	
29856393-1	2018	The distinct ultraviolet (UV) light absorption of indium tin oxide (ITO) limits the performance of GaN-based near-UV light-emitting diodes (LEDs).	indium tin oxide	50-66	gigaxonin	Homo sapiens	99-102	
29856393-1	2018	The distinct ultraviolet (UV) light absorption of indium tin oxide (ITO) limits the performance of GaN-based near-UV light-emitting diodes (LEDs).	indium tin oxide	68-71	gigaxonin	Homo sapiens	99-102