PMID-sentid	Pub_year	Sent_text		comp_official_name	comp_offsetprotein_name	organism	prot_offset
31853657-7	2019	The excellent sensitivity of Si NP-A towards Cu2+ has been testified with the detection limit as low as 0.91 muM by good linear relationship between ratio of fluorescence intensity (I436/I500) and concentration of Cu2+ (2-30 muM).	Silicon	29-31	latexin	Homo sapiens	109-112	
32708753-9	2020	The average grain size of the Cu-Ni-Co-Si-Cr-Ce alloy (48 mum) was finer than that of the Cu-Ni-Co-Si-Cr alloy (80 mum).	Silicon	39-41	latexin	Homo sapiens	58-61	
32513005-3	2020	Silicon sub-micron spheres with diameter from 100 nm to 1 mum are demonstrated and the placement of silicon sub-micron spheres can be as accurate as 10 nm or even below.	Silicon	0-7	latexin	Homo sapiens	58-61	
32513005-3	2020	Silicon sub-micron spheres with diameter from 100 nm to 1 mum are demonstrated and the placement of silicon sub-micron spheres can be as accurate as 10 nm or even below.	Silicon	100-107	latexin	Homo sapiens	58-61	
31853657-7	2019	The excellent sensitivity of Si NP-A towards Cu2+ has been testified with the detection limit as low as 0.91 muM by good linear relationship between ratio of fluorescence intensity (I436/I500) and concentration of Cu2+ (2-30 muM).	Silicon	29-31	latexin	Homo sapiens	225-228	
28708149-4	2017	For similar etched marks on silicon with diameters around 1 mum, we show that the required ablation energy is minimum when the injected light beam is close to the fundamental mode diameter of the fiber.	Silicon	28-35	latexin	Homo sapiens	60-63	
30693277-1	2018	Ultra-thin and large-area silicon wafers with a thickness in the range of 20-70 mum, were produced by spalling using a nickel stressor layer.	Silicon	26-33	latexin	Homo sapiens	80-83	
30693277-7	2018	A silicon wafer with a predicted thickness of 50 mum was exfoliated for further analysis.	Silicon	2-9	latexin	Homo sapiens	49-52	
29293859-4	2017	Scanning fluorescence X-ray microscopy images of a 50-mum x 45-mum area of an organic soil sample showed heterogeneous distributions of P, Al, and Si.	Silicon	147-149	latexin	Homo sapiens	63-66	
30407440-6	2016	Experiments demonstrate successful directed assembly of cylindrical, hydrogel colloidal microcomponents with 26 mum mean diameter and 50 mum length into silicon templates patterned with hemicylindrical assembly sites.	Silicon	153-160	latexin	Homo sapiens	112-115	
28295078-3	2017	Silicon-based high-power lasers have been demonstrated at 1.55 mum wavelength, while in the 2 mum region, to the best of our knowledge, high-power, high-efficiency, and monolithic light sources have been minimally investigated.	Silicon	0-7	latexin	Homo sapiens	63-66	
28024320-4	2016	A trigated structure surrounding the randomly networked single-walled CNT channel was formed on a fin-like 3-D silicon frame, and as a result, the effective packing density increased to almost 600 CNTs/mum.	Silicon	111-118	latexin	Homo sapiens	202-205	
28454148-1	2017	We propose a highly efficient graphene-on-gap modulator (GOGM) by employing the hybrid plasmonic effect, whose modulation efficiency (up to 1.23 dB/mum after optimization) is ~12-fold larger than that of the present graphene-on-silicon modulator (~0.1  dB/mum).	Silicon	228-235	latexin	Homo sapiens	148-151	
28336851-7	2017	For thin silicon (<2 mum) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%.	Silicon	9-16	latexin	Homo sapiens	24-27	
30407440-6	2016	Experiments demonstrate successful directed assembly of cylindrical, hydrogel colloidal microcomponents with 26 mum mean diameter and 50 mum length into silicon templates patterned with hemicylindrical assembly sites.	Silicon	153-160	latexin	Homo sapiens	137-140	
26563679-8	2015	It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 mum.	Silicon	55-62	latexin	Homo sapiens	141-144	
26793033-8	2015	Above 3 muM Si(OH)4, bSiO2:PDMPO was constant and PDMPO incorporation was converted to silica production using a mole ratio of 2,916 as determined from cultures.	Silicon	12-14	latexin	Homo sapiens	8-11	
26468962-5	2015	The transistor performance showed significantly higher conductivity with good gate control compared to Si-based conventional field-effect transistors: the drain current was 0.65 mA/mum, and the transconductance was 2.2 mS/mum at drain-source voltage of 0.50 V. These demonstrations are a first step for building alternative integrated circuits using vertical III-V/multigate planar Ge FETs.	Silicon	103-105	latexin	Homo sapiens	181-184	
26468962-5	2015	The transistor performance showed significantly higher conductivity with good gate control compared to Si-based conventional field-effect transistors: the drain current was 0.65 mA/mum, and the transconductance was 2.2 mS/mum at drain-source voltage of 0.50 V. These demonstrations are a first step for building alternative integrated circuits using vertical III-V/multigate planar Ge FETs.	Silicon	103-105	latexin	Homo sapiens	222-225	
26452901-5	2015	The obtained silicon nanoparticles (SiQDs@PAMAM-OH) were characterized by TEM, DLS and XPS, and were found to detect selectively Cr(VI) in aqueous solutions at 2.7 muM level of detection, sensitivity of 0.2 muM with a RSD of 0.16% (n=10).	Silicon	13-20	latexin	Homo sapiens	164-167	
26452901-5	2015	The obtained silicon nanoparticles (SiQDs@PAMAM-OH) were characterized by TEM, DLS and XPS, and were found to detect selectively Cr(VI) in aqueous solutions at 2.7 muM level of detection, sensitivity of 0.2 muM with a RSD of 0.16% (n=10).	Silicon	13-20	latexin	Homo sapiens	207-210	
26076285-2	2015	The diameter and depth of the Si via were about 80 mum and 170 mum, respectively.	Silicon	30-32	latexin	Homo sapiens	51-54	
26189813-7	2015	By electrically inducing indium tin oxide (ITO) to be in a local ENZ state, we show that a Si/ITO/HfO2/Al/HfO2/ITO/Si coupled-plasmonic waveguide can provide amplitude modulation with ER = 4.83 dB/mum, IL = 0.03 dB/mum, L3dB = 622 nm, and E = 14.8 fJ, showing at least an order of magnitude improvement in modulator figure-of-merit and power efficiency compared to other waveguide platforms.	Silicon	91-93	latexin	Homo sapiens	197-200	
26189813-7	2015	By electrically inducing indium tin oxide (ITO) to be in a local ENZ state, we show that a Si/ITO/HfO2/Al/HfO2/ITO/Si coupled-plasmonic waveguide can provide amplitude modulation with ER = 4.83 dB/mum, IL = 0.03 dB/mum, L3dB = 622 nm, and E = 14.8 fJ, showing at least an order of magnitude improvement in modulator figure-of-merit and power efficiency compared to other waveguide platforms.	Silicon	91-93	latexin	Homo sapiens	215-218	
26076285-2	2015	The diameter and depth of the Si via were about 80 mum and 170 mum, respectively.	Silicon	30-32	latexin	Homo sapiens	63-66	
25988370-4	2015	Such an all-in-one method has generated a (continuously processed) high-capacity Si anode integrating longevity and stable electrolyte-anode diaphragm for Li-ion batteries (e.g. a reversible capacity as large as ~1800 mAh/g or ~350 muAh/cm(2)-mum with a CE of ~99% at 0.1 C after long-term 400 cycles).	Silicon	81-83	latexin	Homo sapiens	243-246	
25006119-2	2014	In this paper, we describe a highly dense, uniform and non-periodic nanocone forest structure of black silicon (bSi) created on optically-thin (30 mum) mu-cells for broadband and omnidirectional light-trapping with a lithography-free and high-throughput plasma texturizing process.	Silicon	103-110	latexin	Homo sapiens	147-150	
22522671-3	2012	The assay is based on silicon chips with densely packed, highly ordered, dead-ended pores of mum-diameters on one side.	Silicon	22-35	latexin	Homo sapiens	93-96	
24677501-1	2014	An industry standard 8"" silicon-on-insulator wafer based ultra-thin (1 mum), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown.	Silicon	25-32	latexin	Homo sapiens	72-75	
23677129-4	2013	The lowest relative effective reflectivity (0.17% over a range of 300-1000 nm) occurs with a silver ion concentration of 50 muM, however, with the silver ion concentration decreases to 5 muM surfaces with a low relative effective reflectivity (2.60%) and a short nanopore length (<250 nm) can be obtained with 10 minute etching time, indicating that this method can be used as a simple (one-pot), low cost (low silver concentration), energy efficient (room temperature), method for the synthesis of anti-reflection layers for silicon-based solar cell applications.	Silicon	529-536	latexin	Homo sapiens	124-127	
23677129-4	2013	The lowest relative effective reflectivity (0.17% over a range of 300-1000 nm) occurs with a silver ion concentration of 50 muM, however, with the silver ion concentration decreases to 5 muM surfaces with a low relative effective reflectivity (2.60%) and a short nanopore length (<250 nm) can be obtained with 10 minute etching time, indicating that this method can be used as a simple (one-pot), low cost (low silver concentration), energy efficient (room temperature), method for the synthesis of anti-reflection layers for silicon-based solar cell applications.	Silicon	529-536	latexin	Homo sapiens	187-190	
23535661-5	2013	Our measurements probe a broad range of mean free paths in crystalline silicon spanning 0.3-8.0 mum at a temperature of 311 K and show that 40+-5% of its thermal conductivity comes from phonons with mean free path >1 mum.	Silicon	71-78	latexin	Homo sapiens	96-99	
22823911-2	2012	The EFE properties of UNCD/Au-Si could be turned on at a low field of 8.9 V/mum, attaining EFE current density of 4.5 mA/cm(2) at an applied field of 10.5 V/mum, which is superior to that of UNCD films grown on Si (UNCD/Si) substrates with the same chemical vapor deposition process.	Silicon	30-32	latexin	Homo sapiens	76-79	
22823911-2	2012	The EFE properties of UNCD/Au-Si could be turned on at a low field of 8.9 V/mum, attaining EFE current density of 4.5 mA/cm(2) at an applied field of 10.5 V/mum, which is superior to that of UNCD films grown on Si (UNCD/Si) substrates with the same chemical vapor deposition process.	Silicon	30-32	latexin	Homo sapiens	157-160	
22823911-2	2012	The EFE properties of UNCD/Au-Si could be turned on at a low field of 8.9 V/mum, attaining EFE current density of 4.5 mA/cm(2) at an applied field of 10.5 V/mum, which is superior to that of UNCD films grown on Si (UNCD/Si) substrates with the same chemical vapor deposition process.	Silicon	211-213	latexin	Homo sapiens	76-79	
22823911-2	2012	The EFE properties of UNCD/Au-Si could be turned on at a low field of 8.9 V/mum, attaining EFE current density of 4.5 mA/cm(2) at an applied field of 10.5 V/mum, which is superior to that of UNCD films grown on Si (UNCD/Si) substrates with the same chemical vapor deposition process.	Silicon	211-213	latexin	Homo sapiens	76-79	
21716368-0	2011	1.3-mum InAs/GaAs quantum-dot lasers monolithically grown on Si substrates.	Silicon	61-63	latexin	Homo sapiens	4-7	
22525257-8	2012	We use a hard substrate, such as silicon or fused silica, to make channels 5-10 mum wide and 10 mum deep (See Figure 1).	Silicon	33-40	latexin	Homo sapiens	80-83	
22525257-8	2012	We use a hard substrate, such as silicon or fused silica, to make channels 5-10 mum wide and 10 mum deep (See Figure 1).	Silicon	33-40	latexin	Homo sapiens	96-99	
21716368-1	2011	We report the first operation of an electrically pumped 1.3-mum InAs/GaAs quantum-dot laser epitaxially grown on a Si (100) substrate.	Silicon	115-117	latexin	Homo sapiens	60-63	
18033536-0	2001	1.55-mum and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector.	Silicon	74-81	latexin	Homo sapiens	5-8	
21271691-1	2011	Silicon/silicon dioxide surfaces containing 3 mum (width) x 6 mum (length) x 40 mum (height) staggered rhombus posts were prepared using photolithography and hydrophobized using a perfluoroalkyl-containing monofunctional silane.	Silicon	0-7	latexin	Homo sapiens	62-65	
21271691-1	2011	Silicon/silicon dioxide surfaces containing 3 mum (width) x 6 mum (length) x 40 mum (height) staggered rhombus posts were prepared using photolithography and hydrophobized using a perfluoroalkyl-containing monofunctional silane.	Silicon	0-7	latexin	Homo sapiens	62-65	
20372619-4	2009	Numerical assessment of the suggested structure shows excellent coupling efficiency (up to 59%) of the 10 mum free-space Gaussian beam to the 0.36 mum Si waveguide within a working distance of a few mum.	Silicon	151-153	latexin	Homo sapiens	106-109	
20372619-4	2009	Numerical assessment of the suggested structure shows excellent coupling efficiency (up to 59%) of the 10 mum free-space Gaussian beam to the 0.36 mum Si waveguide within a working distance of a few mum.	Silicon	151-153	latexin	Homo sapiens	147-150	
20372619-4	2009	Numerical assessment of the suggested structure shows excellent coupling efficiency (up to 59%) of the 10 mum free-space Gaussian beam to the 0.36 mum Si waveguide within a working distance of a few mum.	Silicon	151-153	latexin	Homo sapiens	147-150