PMID-sentid Pub_year Sent_text comp_official_name comp_offsetprotein_name organism prot_offset 33346311-0 2021 Collective radical oligomerisation induced by an STM tip on a silicon surface. Silicon 62-69 sulfotransferase family 1A member 3 Homo sapiens 49-52 31197295-2 2019 The W 5dz2 orbital, the LUMO of the isolated cluster, plays a critical role in all aspects, forming a covalent bond between the metal and the silicon surface, and then providing an effective transmission channel that allows current to flow from the surface to STM tip. Silicon 142-149 sulfotransferase family 1A member 3 Homo sapiens 260-263 31022709-2 2019 By fully incorporating a metallic tip on a silicon chip using modern micromachining and nanofabrication techniques, we realize so-called smart tips and show the possibility of device-based STM tips. Silicon 43-50 sulfotransferase family 1A member 3 Homo sapiens 189-192 31197295-3 2019 The STM images therefore provide a very direct probe of the W-Si surface bond. Silicon 62-64 sulfotransferase family 1A member 3 Homo sapiens 4-7 30566916-1 2019 We report on the low-temperature scanning tunneling microscopy/spectroscopy (STM/STS) study of the (Bi, Na)/Si(1 1 1)[Formula: see text] reconstruction that is known to possess Fermi surface with apparently good nesting. Silicon 108-110 sulfotransferase family 1A member 3 Homo sapiens 77-80 30365166-1 2018 We use clusters for the modeling of local ion resonances caused by low energy charge carriers in STM-induced desorption of benzene derivates from Si(111)-7 x 7. Silicon 146-148 sulfotransferase family 1A member 3 Homo sapiens 97-100 28281744-2 2017 Recent advances in STM include tunneling from spin-polarized and superconducting tips, time-domain spectroscopy, and the fabrication of atomically precise Si nanoelectronics. Silicon 155-157 sulfotransferase family 1A member 3 Homo sapiens 19-22 29322945-2 2018 The topographic STM images reveal that the self-assembled unidirectional and parallel NiSi NWs grow into the Si(110) substrate along the [Formula: see text] direction (i.e. the endotaxial growth) and exhibit multiple-layer growth. Silicon 88-90 sulfotransferase family 1A member 3 Homo sapiens 16-19 30062353-2 2018 The formation of this network has been investigated by STM and has been elucidated in the light of sergeants & soldiers principle due to halogen bonding on a silicon surface. Silicon 162-169 sulfotransferase family 1A member 3 Homo sapiens 55-58 28281744-4 2017 probe a single-atom transistor in silicon, fabricated using the precision of a STM, at microwave frequencies. Silicon 34-41 sulfotransferase family 1A member 3 Homo sapiens 79-82 22865591-1 2012 Bromine atom transfer to a silicon surface as a function of physisorbed adsorbate alignment (see picture: left, vertical 1-bromopentane; right, horizontal 1-bromopentane) of 1-bromopropane and 1-bromopentane on Si(111)-7x7 has been studied by STM. Silicon 27-34 sulfotransferase family 1A member 3 Homo sapiens 243-246 28008878-6 2017 Our results therefore suggest that a common non-adiabatic process mediates atomic and molecular manipulation induced by the STM on the Si(111)-7x7 surface and may also mediate similar manipulation induced by the laser irradiation of the Si(111)-7x7 surface. Silicon 135-137 sulfotransferase family 1A member 3 Homo sapiens 124-127 27036469-0 2016 STM study of PTCDA on Sn/Si(111)-2 3x2 3. Silicon 25-27 sulfotransferase family 1A member 3 Homo sapiens 0-3 26117434-6 2015 Preliminary results with STM and AFM atomic resolution imaging at 4.5 K of the silicon Si(111)-7x7 surface are presented. Silicon 79-86 sulfotransferase family 1A member 3 Homo sapiens 25-28 24718559-1 2014 The formation of large assemblies on the Si(111)-B surface is discussed with the help of STM simulations and DFT calculations. Silicon 41-43 sulfotransferase family 1A member 3 Homo sapiens 89-92 23488728-4 2013 By positioning the tip of an STM above a nanoparticle, a double barrier tunnel junction (DBTJ) is created, and Coulomb blockade is demonstrated at 40 K. This is the first time Coulomb blockade is observed with an organic monolayer on oxide-free silicon. Silicon 245-252 sulfotransferase family 1A member 3 Homo sapiens 29-32 28008878-6 2017 Our results therefore suggest that a common non-adiabatic process mediates atomic and molecular manipulation induced by the STM on the Si(111)-7x7 surface and may also mediate similar manipulation induced by the laser irradiation of the Si(111)-7x7 surface. Silicon 237-239 sulfotransferase family 1A member 3 Homo sapiens 124-127 27397949-2 2016 STM images indicate that growth morphology of both Si on Si and Si on H-terminated Si (H: Si) is epitaxial in nature at temperatures as low as 250 C. For Si on Si growth at 250 C, we show that the Si epitaxial growth front maintains a constant morphology after reaching a specific thickness threshold. Silicon 51-53 sulfotransferase family 1A member 3 Homo sapiens 0-3 27397949-2 2016 STM images indicate that growth morphology of both Si on Si and Si on H-terminated Si (H: Si) is epitaxial in nature at temperatures as low as 250 C. For Si on Si growth at 250 C, we show that the Si epitaxial growth front maintains a constant morphology after reaching a specific thickness threshold. Silicon 57-59 sulfotransferase family 1A member 3 Homo sapiens 0-3 27397949-2 2016 STM images indicate that growth morphology of both Si on Si and Si on H-terminated Si (H: Si) is epitaxial in nature at temperatures as low as 250 C. For Si on Si growth at 250 C, we show that the Si epitaxial growth front maintains a constant morphology after reaching a specific thickness threshold. Silicon 57-59 sulfotransferase family 1A member 3 Homo sapiens 0-3 27397949-2 2016 STM images indicate that growth morphology of both Si on Si and Si on H-terminated Si (H: Si) is epitaxial in nature at temperatures as low as 250 C. For Si on Si growth at 250 C, we show that the Si epitaxial growth front maintains a constant morphology after reaching a specific thickness threshold. Silicon 57-59 sulfotransferase family 1A member 3 Homo sapiens 0-3 27397949-2 2016 STM images indicate that growth morphology of both Si on Si and Si on H-terminated Si (H: Si) is epitaxial in nature at temperatures as low as 250 C. For Si on Si growth at 250 C, we show that the Si epitaxial growth front maintains a constant morphology after reaching a specific thickness threshold. Silicon 57-59 sulfotransferase family 1A member 3 Homo sapiens 0-3 27397949-2 2016 STM images indicate that growth morphology of both Si on Si and Si on H-terminated Si (H: Si) is epitaxial in nature at temperatures as low as 250 C. For Si on Si growth at 250 C, we show that the Si epitaxial growth front maintains a constant morphology after reaching a specific thickness threshold. Silicon 57-59 sulfotransferase family 1A member 3 Homo sapiens 0-3 27397949-2 2016 STM images indicate that growth morphology of both Si on Si and Si on H-terminated Si (H: Si) is epitaxial in nature at temperatures as low as 250 C. For Si on Si growth at 250 C, we show that the Si epitaxial growth front maintains a constant morphology after reaching a specific thickness threshold. Silicon 57-59 sulfotransferase family 1A member 3 Homo sapiens 0-3 27397949-2 2016 STM images indicate that growth morphology of both Si on Si and Si on H-terminated Si (H: Si) is epitaxial in nature at temperatures as low as 250 C. For Si on Si growth at 250 C, we show that the Si epitaxial growth front maintains a constant morphology after reaching a specific thickness threshold. Silicon 57-59 sulfotransferase family 1A member 3 Homo sapiens 0-3 25900852-0 2015 STM study of electrical transport properties of one dimensional contacts between MnSi(~1.7) nanowires and Si(111) and (110) substrates. Silicon 83-85 sulfotransferase family 1A member 3 Homo sapiens 0-3 25414133-0 2015 Mapping the site-specific potential energy landscape for chemisorbed and physisorbed aromatic molecules on the Si(1 1 1)-7 x 7 surface by time-lapse STM. Silicon 111-113 sulfotransferase family 1A member 3 Homo sapiens 149-152 26278608-0 2014 Concerted Thermal-Plus-Electronic Nonlocal Desorption of Chlorobenzene from Si(111)-7 x 7 in the STM. Silicon 76-78 sulfotransferase family 1A member 3 Homo sapiens 97-100 26278608-1 2014 The rate of desorption of chemisorbed chlorobenzene molecules from the Si(111)-7 x 7 surface, induced by nonlocal charge injection from an STM tip, depends on the surface temperature. Silicon 71-73 sulfotransferase family 1A member 3 Homo sapiens 139-142 24996100-2 2014 Here we report a combined STM and transport method capable of surface conductivity measurement of step-free or single-step containing surface regions and having minimal interaction with the sample, and by which we quantitatively determine the intrinsic conductivity of the Si-(7x7) surface. Silicon 273-275 sulfotransferase family 1A member 3 Homo sapiens 26-29 17125315-2 2006 STM images, collected at 77 K, revealed an unreconstructed 1 x 1 structure for the chlorination layer, consistent with what has been observed for the gas phase chlorination of H-terminated Si(111). Silicon 189-191 sulfotransferase family 1A member 3 Homo sapiens 0-3 22546188-0 2012 Modifying the STM tip for the " ultimate " imaging of the Si(111)-7x7 surface and metal-supported molecules. Silicon 58-60 sulfotransferase family 1A member 3 Homo sapiens 14-17 21711733-0 2011 Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED. Silicon 24-26 sulfotransferase family 1A member 3 Homo sapiens 102-105 21711733-1 2011 The Si(001) surface deoxidized by short annealing at T ~ 925 C in the ultrahigh vacuum molecuar beam epitaxy chamber has been in situ investigated using high-resolution scanning tunneling microscopy (STM)and redegreesected high-energy electron diffraction (RHEED. Silicon 4-6 sulfotransferase family 1A member 3 Homo sapiens 200-203 22218732-1 2012 We present STM data that show that it is possible to use a metal induced 2 x 7 reconstruction of Si(001) to narrow the width distribution of Dy silicide nanowires. Silicon 97-99 sulfotransferase family 1A member 3 Homo sapiens 11-14 21879758-3 2011 On the 7x7 reconstruction of the Si(111) surface, charge transport through the surface has been demonstrated by others using charge injection by STM tips. Silicon 33-35 sulfotransferase family 1A member 3 Homo sapiens 145-148 16551059-1 2006 Recently, we reported STM images of the methylated Si(111) surface [prepared through chlorination-alkylation of the Si(111)-H surface] taken at 4.7 K, indicating that the torsion angle of the methyl group with respect to the subsurface silicon layer is phi = 23 +/- 3 degrees . Silicon 51-53 sulfotransferase family 1A member 3 Homo sapiens 22-25 16803324-1 2006 An intriguing growth morphology of Pb islands on a Si(111) surface is observed in our STM experiments: the growth of a Pb layer on Pb islands with unstable heights starts from the periphery and moves towards the center, while the nucleation of the next layer on stable Pb islands starts away from the periphery. Silicon 51-53 sulfotransferase family 1A member 3 Homo sapiens 86-89 16551059-1 2006 Recently, we reported STM images of the methylated Si(111) surface [prepared through chlorination-alkylation of the Si(111)-H surface] taken at 4.7 K, indicating that the torsion angle of the methyl group with respect to the subsurface silicon layer is phi = 23 +/- 3 degrees . Silicon 116-118 sulfotransferase family 1A member 3 Homo sapiens 22-25 16551059-1 2006 Recently, we reported STM images of the methylated Si(111) surface [prepared through chlorination-alkylation of the Si(111)-H surface] taken at 4.7 K, indicating that the torsion angle of the methyl group with respect to the subsurface silicon layer is phi = 23 +/- 3 degrees . Silicon 236-243 sulfotransferase family 1A member 3 Homo sapiens 22-25 15525007-1 2004 STM investigations of vicinal Si(111) surfaces etched in KOH solutions under controlled flow conditions show that step bunching instability is due to inhomogeneities that develop in the etchant as the result of highly step-site-specific etching reactions. Silicon 30-32 sulfotransferase family 1A member 3 Homo sapiens 0-3 16486601-2 2006 Remarkable details, corresponding to the passage of phasons through the tunnel junction, are detected by the STM within the short span between two atoms comprising an individual Si dimer. Silicon 178-180 sulfotransferase family 1A member 3 Homo sapiens 109-112 15521727-0 2004 Photochemical attachment of organic monolayers onto H-terminated Si(111): radical chain propagation observed via STM studies. Silicon 65-67 sulfotransferase family 1A member 3 Homo sapiens 113-116 9981774-0 1995 Phosphine adsorption and decomposition on Si(100) 2 x 1 studied by STM. Silicon 42-44 sulfotransferase family 1A member 3 Homo sapiens 67-70 11017499-0 2000 Bistability in scanning tunneling spectroscopy of Ga-terminated Si(111) Bistable electron transport, a phenomenon usually associated with double-barrier structures, has been observed with a conventional STM junction formed between a metal tip and a Ga-terminated Si(111) surface at 77 K. Large hysteresis loops appear in the current-voltage characteristics when electrons are injected from the tip to the surface. Silicon 64-66 sulfotransferase family 1A member 3 Homo sapiens 203-206 11017499-0 2000 Bistability in scanning tunneling spectroscopy of Ga-terminated Si(111) Bistable electron transport, a phenomenon usually associated with double-barrier structures, has been observed with a conventional STM junction formed between a metal tip and a Ga-terminated Si(111) surface at 77 K. Large hysteresis loops appear in the current-voltage characteristics when electrons are injected from the tip to the surface. Silicon 263-265 sulfotransferase family 1A member 3 Homo sapiens 203-206 15089492-4 2004 Here, using STM, we show that on Si(100) many intrinsically repulsive adsorbates cluster to form surface patches even at low surface coverages. Silicon 33-35 sulfotransferase family 1A member 3 Homo sapiens 12-15 14525459-1 2003 We report a systematic experimental investigation of the mechanism of desorption of chlorobenzene molecules from the Si(111)-(7 x 7) surface induced by the STM at room temperature. Silicon 117-119 sulfotransferase family 1A member 3 Homo sapiens 156-159 12225042-1 2002 The persistence behavior for fluctuating steps on the Si(111)-(sqrt[3]xsqrt[3])R30 degrees -Al surface was determined by analyzing time-dependent STM images for temperatures between 770 and 970 K. Using the standard persistence definition, the measured persistence probability displays power-law decay with an exponent of theta=0.77+/-0.03. Silicon 54-56 sulfotransferase family 1A member 3 Homo sapiens 146-149 9979822-0 1995 Theory on STM images of Si(001) surface near defects. Silicon 24-26 sulfotransferase family 1A member 3 Homo sapiens 10-13 9978925-0 1995 STM study of superstructures formed in the Pd/Si(111) system. Silicon 46-48 sulfotransferase family 1A member 3 Homo sapiens 0-3 10009524-0 1994 STM study on the interactions of C70 with the Si(100)2 x 1 surface. Silicon 46-48 sulfotransferase family 1A member 3 Homo sapiens 0-3 9974725-0 1994 STM study of surface reconstructions of Si(111):B. Silicon 40-42 sulfotransferase family 1A member 3 Homo sapiens 0-3 10008422-0 1993 Topographic and spectroscopic analysis of ethylene adsorption on Si(111)7 x 7 by STM and STS. Silicon 65-67 sulfotransferase family 1A member 3 Homo sapiens 81-84 17743569-0 1986 STM Evidence for Silicon (111). Silicon 17-24 sulfotransferase family 1A member 3 Homo sapiens 0-3 10009100-0 1993 Variable-temperature STM measurements of step kinetics on Si(001). Silicon 58-60 sulfotransferase family 1A member 3 Homo sapiens 21-24