PMID-sentid Pub_year Sent_text comp_official_name comp_offsetprotein_name organism prot_offset 23023645-0 2012 Low-resistance spin injection into silicon using graphene tunnel barriers. Silicon 35-42 spindlin 1 Homo sapiens 15-19 23023645-4 2012 We demonstrate electrical generation and detection of spin accumulation in silicon above room temperature, and show that the contact resistance-area products are two to three orders of magnitude lower than those achieved with oxide tunnel barriers on silicon substrates with identical doping levels. Silicon 75-82 spindlin 1 Homo sapiens 54-58 23005978-1 2012 Spin fluctuations are reported near the magnetic field-driven quantum critical point in YbRh(2)Si(2). Silicon 95-97 spindlin 1 Homo sapiens 0-4 23009168-1 2012 The integration of ferromagnetic Mn5Ge3 with the Ge matrix is promising for spin injection in a silicon-compatible geometry. Silicon 96-103 spindlin 1 Homo sapiens 76-80 23028884-0 2012 Quantum entanglement and spin control in silicon nanocrystal. Silicon 41-48 spindlin 1 Homo sapiens 25-29 23028884-6 2012 We combined high field and low densities (1 MeV/92 nm) to create inseparable quantum state by superimposing the hyperpolarizationed proton spin chain with electron spin of (29)Si. Silicon 176-178 spindlin 1 Homo sapiens 164-168 21770582-6 2011 The results strongly imply that the coupling of Cooper pairs in CeCu(2)Si(2) is mediated by overdamped spin fluctuations. Silicon 71-73 spindlin 1 Homo sapiens 103-107 22138791-0 2011 Electron spin coherence exceeding seconds in high-purity silicon. Silicon 57-64 spindlin 1 Homo sapiens 9-13 22138791-1 2011 Silicon is one of the most promising semiconductor materials for spin-based information processing devices. Silicon 0-7 spindlin 1 Homo sapiens 65-69 22138791-2 2011 Its advanced fabrication technology facilitates the transition from individual devices to large-scale processors, and the availability of a (28)Si form with no magnetic nuclei overcomes a primary source of spin decoherence in many other materials. Silicon 144-146 spindlin 1 Homo sapiens 206-210 22138791-6 2011 A magnetic field gradient suppresses such interactions, producing an extrapolated electron spin T(2) of 10 s at 1.8 K. These coherence lifetimes are without peer in the solid state and comparable to high-vacuum qubits, making electron spins of donors in silicon ideal components of quantum computers, or quantum memories for systems such as superconducting qubits. Silicon 254-261 spindlin 1 Homo sapiens 91-95 21859721-0 2011 Introduction to spin-polarized ballistic hot electron injection and detection in silicon. Silicon 81-88 spindlin 1 Homo sapiens 16-20 21859721-3 2011 Experimental results using these techniques (consisting of spin precession and spin-valve measurements) with silicon-based devices reveals the exceptionally long spin lifetime and high spin coherence induced by drift-dominated transport in the semiconductor. Silicon 109-116 spindlin 1 Homo sapiens 59-63 21859721-3 2011 Experimental results using these techniques (consisting of spin precession and spin-valve measurements) with silicon-based devices reveals the exceptionally long spin lifetime and high spin coherence induced by drift-dominated transport in the semiconductor. Silicon 109-116 spindlin 1 Homo sapiens 79-83 21859721-3 2011 Experimental results using these techniques (consisting of spin precession and spin-valve measurements) with silicon-based devices reveals the exceptionally long spin lifetime and high spin coherence induced by drift-dominated transport in the semiconductor. Silicon 109-116 spindlin 1 Homo sapiens 79-83 21859721-3 2011 Experimental results using these techniques (consisting of spin precession and spin-valve measurements) with silicon-based devices reveals the exceptionally long spin lifetime and high spin coherence induced by drift-dominated transport in the semiconductor. Silicon 109-116 spindlin 1 Homo sapiens 79-83 21248751-8 2011 The entanglement operation was performed simultaneously, with high fidelity, on 10(10) spin pairs; this fulfils one of the essential requirements for a silicon-based quantum information processor. Silicon 152-159 spindlin 1 Homo sapiens 87-91 21699335-0 2011 Spin-polarized transient electron trapping in phosphorus-doped silicon. Silicon 63-70 spindlin 1 Homo sapiens 0-4 21699335-1 2011 Experimental evidence of electron spin precession during travel through the phosphorus-doped Si channel of an all-electrical device simultaneously indicates two distinct processes: (i) short time scales ( 50 ps) due to purely conduction-band transport from injector to detector and (ii) long time scales ( 1 ns) originating from delays associated with capture or reemission in shallow impurity traps. Silicon 93-95 spindlin 1 Homo sapiens 34-38 21568595-1 2011 We demonstrate single-shot readout of a silicon quantum dot spin qubit, and we measure the spin relaxation time T1. Silicon 40-47 spindlin 1 Homo sapiens 60-64 21469904-1 2011 Using density functional theory plus Hubbard U calculations, we show that the ground state of (Mg,Fe)(Si,Fe)O(3) perovskite, the major mineral phase in Earth"s lower mantle, has high-spin ferric iron (S=5/2) at both dodecahedral (A) and octahedral (B) sites. Silicon 102-104 spindlin 1 Homo sapiens 183-187 21164011-3 2010 We demonstrated an ensemble nuclear spin memory in phosphorous-doped silicon, which can be read out electrically and has a lifetime exceeding 100 seconds. Silicon 69-76 spindlin 1 Homo sapiens 36-40 19257738-4 2009 The possibility of strong coupling cavity QED with magnetic dipole transitions also opens up the possibility of extending quantum information processing protocols to spins in silicon or graphene, without the need for single-spin confinement. Silicon 175-182 spindlin 1 Homo sapiens 166-170 21137761-8 2010 These results highlight the feasibility of doping Si surface nanostructures with magnetic ions to fabricate Si devices for spin-dependent enhanced field emission. Silicon 50-52 spindlin 1 Homo sapiens 123-127 21137761-8 2010 These results highlight the feasibility of doping Si surface nanostructures with magnetic ions to fabricate Si devices for spin-dependent enhanced field emission. Silicon 108-110 spindlin 1 Homo sapiens 123-127 20698609-0 2010 Strong and tunable spin--orbit coupling of one-dimensional holes in Ge/Si core/shell nanowires. Silicon 71-73 spindlin 1 Homo sapiens 19-23 20698609-5 2010 These results suggest the Ge/Si nanowire system possesses strong and tunable spin--orbit interactions and may serve as a candidate for spintronics applications. Silicon 29-31 spindlin 1 Homo sapiens 77-81 21393712-0 2010 Spin dynamics of isolated donor electrons in phosphorus-doped silicon from high-frequency electron spin resonance. Silicon 62-69 spindlin 1 Homo sapiens 0-4 21393712-0 2010 Spin dynamics of isolated donor electrons in phosphorus-doped silicon from high-frequency electron spin resonance. Silicon 62-69 spindlin 1 Homo sapiens 99-103 21393712-1 2010 We present the spin dynamics of isolated donor electrons in phosphorus-doped silicon at low temperature and in a high magnetic field. Silicon 77-84 spindlin 1 Homo sapiens 15-19 20010828-0 2010 Oscillatory spin-polarized tunnelling from silicon quantum wells controlled by electric field. Silicon 43-50 spindlin 1 Homo sapiens 12-16 20010828-2 2010 Spin-polarized tunnelling, successful in ferromagnetic metal junctions, was recently used to inject and detect electron spins in organics and bulk GaAs or Si. Silicon 155-157 spindlin 1 Homo sapiens 0-4 20010828-6 2010 The electric modification of the spin polarization relies on discrete states in the Si with a Zeeman spin splitting, an approach that is also applicable to organic, carbon-based and other materials with weak spin-orbit interaction. Silicon 84-86 spindlin 1 Homo sapiens 33-37 20010828-6 2010 The electric modification of the spin polarization relies on discrete states in the Si with a Zeeman spin splitting, an approach that is also applicable to organic, carbon-based and other materials with weak spin-orbit interaction. Silicon 84-86 spindlin 1 Homo sapiens 101-105 20010828-6 2010 The electric modification of the spin polarization relies on discrete states in the Si with a Zeeman spin splitting, an approach that is also applicable to organic, carbon-based and other materials with weak spin-orbit interaction. Silicon 84-86 spindlin 1 Homo sapiens 101-105 19940922-0 2009 Electrical creation of spin polarization in silicon at room temperature. Silicon 44-51 spindlin 1 Homo sapiens 23-27 19940922-3 2009 Recently it has become possible to induce and detect spin polarization in otherwise non-magnetic semiconductors (gallium arsenide and silicon) using all-electrical structures, but so far only at temperatures below 150 K and in n-type materials, which limits further development. Silicon 134-141 spindlin 1 Homo sapiens 53-57 19940922-5 2009 A spin splitting as large as 2.9 meV is created in n-type silicon, corresponding to an electron spin polarization of 4.6%. Silicon 58-65 spindlin 1 Homo sapiens 2-6 19940922-5 2009 A spin splitting as large as 2.9 meV is created in n-type silicon, corresponding to an electron spin polarization of 4.6%. Silicon 58-65 spindlin 1 Homo sapiens 96-100 19940922-6 2009 The extracted spin lifetime is greater than 140 ps for conduction electrons in heavily doped n-type silicon at 300 K and greater than 270 ps for holes in heavily doped p-type silicon at the same temperature. Silicon 100-107 spindlin 1 Homo sapiens 14-18 19940922-6 2009 The extracted spin lifetime is greater than 140 ps for conduction electrons in heavily doped n-type silicon at 300 K and greater than 270 ps for holes in heavily doped p-type silicon at the same temperature. Silicon 175-182 spindlin 1 Homo sapiens 14-18 20366723-0 2010 Spin-dependent recombination between phosphorus donors in silicon and Si/SiO{2} interface states investigated with pulsed electrically detected electron double resonance. Silicon 58-65 spindlin 1 Homo sapiens 0-4 20366723-0 2010 Spin-dependent recombination between phosphorus donors in silicon and Si/SiO{2} interface states investigated with pulsed electrically detected electron double resonance. Silicon 70-72 spindlin 1 Homo sapiens 0-4 20366723-1 2010 We investigate the spin species relevant for the spin-dependent recombination used for the electrical readout of coherent spin manipulation in phosphorus-doped silicon. Silicon 160-167 spindlin 1 Homo sapiens 19-23 20366723-1 2010 We investigate the spin species relevant for the spin-dependent recombination used for the electrical readout of coherent spin manipulation in phosphorus-doped silicon. Silicon 160-167 spindlin 1 Homo sapiens 49-53 20366723-1 2010 We investigate the spin species relevant for the spin-dependent recombination used for the electrical readout of coherent spin manipulation in phosphorus-doped silicon. Silicon 160-167 spindlin 1 Homo sapiens 49-53 20366723-2 2010 Via a multifrequency pump-probe experiment in pulsed electrically detected magnetic resonance, we demonstrate that the dominant spin-dependent recombination transition occurs between phosphorus donors and Si/SiO_{2} interface states. Silicon 205-207 spindlin 1 Homo sapiens 128-132 19792397-0 2009 Spin polarized electron transport near the Si/SiO2 interface. Silicon 43-45 spindlin 1 Homo sapiens 0-4 19792397-1 2009 Using long-distance lateral devices, spin transport near the interface of Si and its native oxide (SiO(2)) is studied by spin-valve measurements in an in-plane magnetic field and spin precession measurements in a perpendicular magnetic field at 60 K. As electrons are attracted to the interface by an electrostatic gate, we observe shorter average spin transit times and an increase in spin coherence, despite a reduction in total spin polarization. Silicon 74-76 spindlin 1 Homo sapiens 37-41 21825437-0 2009 The Yb(2)Al(1-x)Mg(x)Si(2) series from a spin fluctuation (x = 0) to a magnetically ordered ground state (x = 1). Silicon 21-23 spindlin 1 Homo sapiens 41-45 19179097-13 2009 The method is applicable to any slow-relaxing nuclear spin species, such as (29)Si, (15)N and other low-gamma nuclei. Silicon 80-82 spindlin 1 Homo sapiens 54-58 18518338-0 2008 Spin echoes in the charge transport through phosphorus donors in silicon. Silicon 65-72 spindlin 1 Homo sapiens 0-4 18999847-0 2008 Spin states of holes in Ge/Si nanowire quantum dots. Silicon 27-29 spindlin 1 Homo sapiens 0-4 18518338-1 2008 The electrical detection of spin echoes via echo tomography is used to observe coherent processes associated with the electrical readout of the spin state of phosphorus donor electrons in silicon near a SiO2 interface. Silicon 188-195 spindlin 1 Homo sapiens 28-32 18518338-1 2008 The electrical detection of spin echoes via echo tomography is used to observe coherent processes associated with the electrical readout of the spin state of phosphorus donor electrons in silicon near a SiO2 interface. Silicon 188-195 spindlin 1 Homo sapiens 144-148 16262405-8 2005 The spin density of trapped electron appears spread over (27)Al, (29)Si, (7)Li, and (1)H nuclei as deduced by two-dimensional approach of hyperfine sublevel correlation (HYSCORE). Silicon 69-71 spindlin 1 Homo sapiens 4-8 17995369-0 2007 Coherent spin transport through a 350 micron thick silicon wafer. Silicon 51-58 spindlin 1 Homo sapiens 9-13 17995369-1 2007 We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Silicon 149-156 spindlin 1 Homo sapiens 63-67 16907469-0 2006 Spin injection and detection in silicon. Silicon 32-39 spindlin 1 Homo sapiens 0-4 17026185-0 2006 Electrically detected electron spin resonance in a high-mobility silicon quantum well. Silicon 65-72 spindlin 1 Homo sapiens 31-35 10990899-0 2000 Microscopic identification of the origin of generation-recombination noise in hydrogenated amorphous silicon with noise-detected magnetic resonance Spin-dependent changes in the noise power of undoped amorphous hydrogenated silicon ( a-Si:H) are observed under electron spin resonance conditions. Silicon 101-108 spindlin 1 Homo sapiens 148-152 12484986-1 2002 Au nanocrystals spin-coated onto silicon from toluene form cellular networks. Silicon 33-40 spindlin 1 Homo sapiens 16-20 10990899-0 2000 Microscopic identification of the origin of generation-recombination noise in hydrogenated amorphous silicon with noise-detected magnetic resonance Spin-dependent changes in the noise power of undoped amorphous hydrogenated silicon ( a-Si:H) are observed under electron spin resonance conditions. Silicon 101-108 spindlin 1 Homo sapiens 270-274 10990899-0 2000 Microscopic identification of the origin of generation-recombination noise in hydrogenated amorphous silicon with noise-detected magnetic resonance Spin-dependent changes in the noise power of undoped amorphous hydrogenated silicon ( a-Si:H) are observed under electron spin resonance conditions. Silicon 224-231 spindlin 1 Homo sapiens 148-152 10990899-0 2000 Microscopic identification of the origin of generation-recombination noise in hydrogenated amorphous silicon with noise-detected magnetic resonance Spin-dependent changes in the noise power of undoped amorphous hydrogenated silicon ( a-Si:H) are observed under electron spin resonance conditions. Silicon 224-231 spindlin 1 Homo sapiens 270-274 10990899-0 2000 Microscopic identification of the origin of generation-recombination noise in hydrogenated amorphous silicon with noise-detected magnetic resonance Spin-dependent changes in the noise power of undoped amorphous hydrogenated silicon ( a-Si:H) are observed under electron spin resonance conditions. Silicon 236-238 spindlin 1 Homo sapiens 148-152 10990899-0 2000 Microscopic identification of the origin of generation-recombination noise in hydrogenated amorphous silicon with noise-detected magnetic resonance Spin-dependent changes in the noise power of undoped amorphous hydrogenated silicon ( a-Si:H) are observed under electron spin resonance conditions. Silicon 236-238 spindlin 1 Homo sapiens 270-274 34614966-4 2021 The leaky waveguide mode in the chiral silicon pillars simultaneously excite the in-plane electric and magnetic dipole moments, which triggers the spin-selected backward electromagnetic radiation, and then realizes the chiral response. Silicon 39-46 spindlin 1 Homo sapiens 147-151 18188285-0 1997 Spin-cast planarization of liquid-crystal-on-silicon microdisplays. Silicon 45-52 spindlin 1 Homo sapiens 0-4 9978582-0 1995 Spin dynamics in the amorphous antiferromagnet Si:P. Silicon 47-49 spindlin 1 Homo sapiens 0-4 9983291-0 1996 Spin-Peierls lattice fluctuations of pure and Si- and Zn-substituted CuGeO3. Silicon 46-48 spindlin 1 Homo sapiens 0-4 9978801-0 1995 Spin-orbit interaction, triplet lifetime, and fine-structure splitting of excitons in highly porous silicon. Silicon 100-107 spindlin 1 Homo sapiens 0-4 9999479-0 1991 Spin resonance of inversion-layer electrons in silicon. Silicon 47-54 spindlin 1 Homo sapiens 0-4 9997906-0 1991 Spin-dependent conductivity in amorphous hydrogenated silicon. Silicon 54-61 spindlin 1 Homo sapiens 0-4 9994904-0 1990 Spin-dependent electron transition processes related to excited triplet spin states of neutral complex defects in silicon studied by optically detected magnetic resonance. Silicon 114-121 spindlin 1 Homo sapiens 0-4 9994904-0 1990 Spin-dependent electron transition processes related to excited triplet spin states of neutral complex defects in silicon studied by optically detected magnetic resonance. Silicon 114-121 spindlin 1 Homo sapiens 72-76 34620847-0 2021 Author Correction: Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide. Silicon 100-107 spindlin 1 Homo sapiens 19-23 34684927-1 2021 In the last 20 years, silicon quantum dots have received considerable attention from academic and industrial communities for research on readout, manipulation, storage, near-neighbor and long-range coupling of spin qubits. Silicon 22-29 spindlin 1 Homo sapiens 210-214 34477616-4 2021 Our results show that such a system is experimentally feasible and would have comparable properties to that of more traditional silicon based spin-qubits. Silicon 128-135 spindlin 1 Homo sapiens 142-146 34279895-4 2021 Spin-coated as-made BCP-niobia hybrid thin films on silicon substrates after optional photolithographic definition are heated in air to produce a porous oxide, and subsequently converted in a multistep process to carbonitrides via treatment with high temperatures in reactive gases including ammonia. Silicon 52-59 spindlin 1 Homo sapiens 0-4 34205174-1 2021 In this paper, one spin-selected vortex metalens composed of silicon nanobricks is designed and numerically investigated at the mid-infrared band, which can produce vortex beams with different topological charges and achieve different spin lights simultaneously. Silicon 61-68 spindlin 1 Homo sapiens 19-23 34205174-1 2021 In this paper, one spin-selected vortex metalens composed of silicon nanobricks is designed and numerically investigated at the mid-infrared band, which can produce vortex beams with different topological charges and achieve different spin lights simultaneously. Silicon 61-68 spindlin 1 Homo sapiens 235-239 34056457-0 2021 Enhancement of the Silicon Solar Cell Efficiency by Spin-Coated Polythiophene Films Embedded with Gold or Palladium Nanoparticles on the Rear Contact. Silicon 19-26 spindlin 1 Homo sapiens 52-56 9949070-0 1989 Spin-orbit splitting of the valence bands in silicon determined by means of high-resolution photoconductive spectroscopy. Silicon 45-52 spindlin 1 Homo sapiens 0-4 9936847-0 1985 Spin delocalization in phosphorus donor pairs in silicon. Silicon 49-56 spindlin 1 Homo sapiens 0-4 17816102-0 1962 Electron Spin Resonance: Its use is leading to a new understanding of impurity centers in semiconductors such as silicon. Silicon 113-120 spindlin 1 Homo sapiens 9-13 35110561-0 2022 A silicon singlet-triplet qubit driven by spin-valley coupling. Silicon 2-9 spindlin 1 Homo sapiens 42-46 35110561-1 2022 Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Silicon 72-79 spindlin 1 Homo sapiens 0-4 35110561-1 2022 Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Silicon 72-79 spindlin 1 Homo sapiens 133-137 9940240-0 1986 Spin delocalization of interstitial iron in silicon. Silicon 44-51 spindlin 1 Homo sapiens 0-4 9940058-0 1986 Spin-glass transition in amorphous Tb-Si films. Silicon 38-40 spindlin 1 Homo sapiens 0-4 33337180-1 2020 Neutral silicon vacancy (SiV^{0}) centers in diamond are promising candidates for quantum networks because of their excellent optical properties and long spin coherence times. Silicon 8-15 spindlin 1 Homo sapiens 154-158 33624651-6 2021 The spin-glass state in the LSMO film is rich in the charge transfer driven localized strong antiferromagnetic coupling at the Si-LSMO interface. Silicon 127-129 spindlin 1 Homo sapiens 4-8 33481612-0 2021 Exchange Coupling in a Linear Chain of Three Quantum-Dot Spin Qubits in Silicon. Silicon 72-79 spindlin 1 Homo sapiens 57-61 32690913-0 2021 Engineering long spin coherence times of spin-orbit qubits in silicon. Silicon 62-69 spindlin 1 Homo sapiens 17-21 32690913-0 2021 Engineering long spin coherence times of spin-orbit qubits in silicon. Silicon 62-69 spindlin 1 Homo sapiens 41-45 32661543-0 2020 Spin controlled surface chemistry: alkyl desorption from Si(100)-2x1 by nonadiabatic hydrogen elimination. Silicon 57-59 spindlin 1 Homo sapiens 0-4 32945650-3 2020 In this work, we reveal an exceptionally long spin communication capability of 45 microm, and highest till date spin diffusion length of 13.6 microm in graphene on SiO2/Si at room temperature. Silicon 164-166 spindlin 1 Homo sapiens 112-116 33156655-2 2020 We observe a Fermi surface with a novel spin texture in the 2D metallic system formed by indium double layers on Si(111) and find that the primary origin of the spin-polarized electronic states of this system is the orbital angular momentum and not the so-called Rashba effect. Silicon 113-115 spindlin 1 Homo sapiens 40-44 33156655-2 2020 We observe a Fermi surface with a novel spin texture in the 2D metallic system formed by indium double layers on Si(111) and find that the primary origin of the spin-polarized electronic states of this system is the orbital angular momentum and not the so-called Rashba effect. Silicon 113-115 spindlin 1 Homo sapiens 161-165 33124837-2 2020 We present the experimental realization and the theoretical description of such a two-level system as an impurity electron spin in a silicon tunnel field-effect transistor. Silicon 133-140 spindlin 1 Homo sapiens 123-127 32603174-2 2020 Spin-resolved measurements of the photoemission current from the Si-terminated surface of the antiferromagnet TbRh_{2}Si_{2} and their analysis within an ab initio one-step theory unveil an unusual triple winding of the electron spin along the fourfold-symmetric constant energy contours of the surface states. Silicon 65-67 spindlin 1 Homo sapiens 0-4 32937454-2 2020 Enrichment of spin-zero isotopes in silicon markedly improves the dephasing time [Formula: see text], which, unexpectedly, can extend two orders of magnitude beyond theoretical expectations. Silicon 36-43 spindlin 1 Homo sapiens 14-18 32639759-0 2020 Giant Anisotropy of Spin Relaxation and Spin-Valley Mixing in a Silicon Quantum Dot. Silicon 64-71 spindlin 1 Homo sapiens 20-24 32639759-0 2020 Giant Anisotropy of Spin Relaxation and Spin-Valley Mixing in a Silicon Quantum Dot. Silicon 64-71 spindlin 1 Homo sapiens 40-44 32639759-1 2020 In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot," the electron spin relaxation rate (T_{1}^{-1}) can be drastically enhanced due to strong spin-valley mixing. Silicon 3-10 spindlin 1 Homo sapiens 112-116 32639759-1 2020 In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot," the electron spin relaxation rate (T_{1}^{-1}) can be drastically enhanced due to strong spin-valley mixing. Silicon 3-10 spindlin 1 Homo sapiens 188-192 32603174-2 2020 Spin-resolved measurements of the photoemission current from the Si-terminated surface of the antiferromagnet TbRh_{2}Si_{2} and their analysis within an ab initio one-step theory unveil an unusual triple winding of the electron spin along the fourfold-symmetric constant energy contours of the surface states. Silicon 65-67 spindlin 1 Homo sapiens 229-233 32433556-0 2020 Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide. Silicon 81-88 spindlin 1 Homo sapiens 0-4 32433556-3 2020 Here, we investigate the silicon vacancy centre in silicon carbide and demonstrate controlled emission of indistinguishable and distinguishable photons via coherent spin manipulation. Silicon 25-32 spindlin 1 Homo sapiens 165-169 32129403-1 2020 We report theoretical modeling of spin-dependent quantum transport properties of dangling bond wires (DBWs) on the Si(100)-2 x 1:H surface. Silicon 115-117 spindlin 1 Homo sapiens 34-38 32022956-2 2020 Herein a spatial-confinement strategy is reported that synthesizes ultrafine alpha-Fe2 O3 benefiting from nanogrids constructed by predeposition of TiO2 nanodots in the MCM-41 channel, and that tunes the spin-state of Fe(III) from high-spin to low-spin induced by the strong guest-host interaction between the ultrafine Fe2 O3 with SiO2 (MCM-41). Silicon 332-336 spindlin 1 Homo sapiens 204-208 32022956-3 2020 The low-spin Fe(III) endorses strong bonding with anionic adsorbates, and significantly facilitates the electrons transfer from Fe2 O3 to SiO2 to form a highly positive charged surface, and thereby shows superior electrostatic multilayer adsorption performance to different kinds of anionic contaminations. Silicon 138-142 spindlin 1 Homo sapiens 8-12 32206704-3 2020 We directly observe the topological states of a photonic analog of electronic materials exhibiting the quantum spin Hall effect, living at the interface between two silicon photonic crystals with different topological order. Silicon 165-172 spindlin 1 Homo sapiens 111-115 31283344-0 2019 Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon. Silicon 54-61 spindlin 1 Homo sapiens 0-4 31792389-0 2020 Achieving spin-triplet exciton transfer between silicon and molecular acceptors for photon upconversion. Silicon 48-55 spindlin 1 Homo sapiens 10-14 31792389-4 2020 Photoexciting these structures drives spin-triplet exciton transfer from silicon to anthracene through a single 15 ns Dexter energy transfer step with a nearly 50% yield. Silicon 73-80 spindlin 1 Homo sapiens 38-42 31792389-6 2020 Our demonstration of spin-triplet exciton transfer from silicon to molecular triplet acceptors can critically enable new technologies for solar energy conversion, quantum information and near-infrared driven photocatalysis. Silicon 56-63 spindlin 1 Homo sapiens 21-25 31532999-4 2019 Here, we investigate charge state manipulation of individual silicon vacancies in silicon carbide, a system which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions. Silicon 61-68 spindlin 1 Homo sapiens 198-202 31944116-1 2020 Spin qubits in silicon quantum dots offer a promising platform for a quantum computer as they have a long coherence time and scalability. Silicon 15-22 spindlin 1 Homo sapiens 0-4 31944116-6 2020 The technique allows us to distinguish between the singly- and doubly-occupied two-electron states under the Pauli spin blockade condition in an integration time of 0.8 mus, the shortest value ever reported in silicon, by the signal-to-noise ratio of 6. Silicon 210-217 spindlin 1 Homo sapiens 115-119 31944116-7 2020 These results provide a guideline for designing silicon spin qubit devices suitable for the fast and high-fidelity readout. Silicon 48-55 spindlin 1 Homo sapiens 56-60 31300631-1 2019 We investigate the spin relaxation under conditions of optical excitation between the Rydberg orbital states of phosphorus donor impurities in silicon. Silicon 143-150 spindlin 1 Homo sapiens 19-23 31283344-1 2019 Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. Silicon 61-68 spindlin 1 Homo sapiens 0-4 30884075-3 2019 At this low-spin cobalt(I) site, homolysis of H-H and Si-H bonds preferentially occurs via bimolecular hydrogen atom transfer instead of two-electron oxidative addition. Silicon 54-56 spindlin 1 Homo sapiens 12-16 29873301-0 2018 Spin-orbit interaction and controlled singlet-triplet dynamics in silicon double quantum dots. Silicon 66-73 spindlin 1 Homo sapiens 0-4 30855956-0 2019 Spin-Coupled Generalized Valence Bond Description of Group 14 Species: The Carbon, Silicon and Germanium Hydrides, XH n ( n = 1-4). Silicon 83-90 spindlin 1 Homo sapiens 0-4 30632370-7 2019 Compared to earlier graphene devices on Si/SiO2 substrates, such values are up to 20 times larger, leading to one order higher spin signals and an enhanced spin diffusion length ~10 mum in graphene-based nonlocal spin valves fabricated using industry standard systems. Silicon 40-42 spindlin 1 Homo sapiens 127-131 30632370-7 2019 Compared to earlier graphene devices on Si/SiO2 substrates, such values are up to 20 times larger, leading to one order higher spin signals and an enhanced spin diffusion length ~10 mum in graphene-based nonlocal spin valves fabricated using industry standard systems. Silicon 40-42 spindlin 1 Homo sapiens 156-160 30632370-7 2019 Compared to earlier graphene devices on Si/SiO2 substrates, such values are up to 20 times larger, leading to one order higher spin signals and an enhanced spin diffusion length ~10 mum in graphene-based nonlocal spin valves fabricated using industry standard systems. Silicon 40-42 spindlin 1 Homo sapiens 156-160 30108212-7 2018 These results provide a path towards scalable silicon hole-spin qubits. Silicon 46-53 spindlin 1 Homo sapiens 59-63 30472859-0 2019 Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal-Silicon-Metal Vertical Structures. Silicon 102-109 spindlin 1 Homo sapiens 17-21 30472859-0 2019 Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal-Silicon-Metal Vertical Structures. Silicon 102-109 spindlin 1 Homo sapiens 43-47 30472859-1 2019 Due to the difficulty of growing high-quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was limited to lateral geometry devices. Silicon 127-129 spindlin 1 Homo sapiens 99-103 30472859-3 2019 We hereby demonstrate pure spin-current injection and transport in the perpendicular current flow geometry over a distance larger than 2 mum in n-type Si at room temperature. Silicon 151-153 spindlin 1 Homo sapiens 27-31 30472859-5 2019 A systematic study varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO-Si interface for the spin-current generation. Silicon 32-34 spindlin 1 Homo sapiens 145-149 30472859-5 2019 A systematic study varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO-Si interface for the spin-current generation. Silicon 124-126 spindlin 1 Homo sapiens 145-149 30472859-6 2019 Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO-Si interface states appears to be a prerequisite to establishing the necessary out-of-equilibrium spin population in Si under the spin-pumping action. Silicon 95-97 spindlin 1 Homo sapiens 193-197 30472859-6 2019 Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO-Si interface states appears to be a prerequisite to establishing the necessary out-of-equilibrium spin population in Si under the spin-pumping action. Silicon 95-97 spindlin 1 Homo sapiens 225-229 29873301-1 2018 We undertake a theoretical study of the role of spin orbit interactions in a silicon double quantum dot. Silicon 77-84 spindlin 1 Homo sapiens 48-52 29481176-0 2018 All-Optical Control of the Silicon-Vacancy Spin in Diamond at Millikelvin Temperatures. Silicon 27-34 spindlin 1 Homo sapiens 43-47 29694195-2 2018 Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Silicon 105-112 spindlin 1 Homo sapiens 89-93 29371427-1 2018 Long coherence times of single spins in silicon quantum dots make these systems highly attractive for quantum computation, but how to scale up spin qubit systems remains an open question. Silicon 40-47 spindlin 1 Homo sapiens 31-35 29371427-3 2018 The electron spin is trapped in a silicon double quantum dot, and the microwave photon is stored in an on-chip high-impedance superconducting resonator. Silicon 34-41 spindlin 1 Homo sapiens 13-17 29481176-1 2018 The silicon-vacancy center in diamond offers attractive opportunities in quantum photonics due to its favorable optical properties and optically addressable electronic spin. Silicon 4-11 spindlin 1 Homo sapiens 168-172 29376726-1 2018 In order to identify the spin contribution to superconducting pairing compatible with the so-called "hidden order", ^{29}Si nuclear magnetic resonance measurements have been performed using a high-quality single crystal of URu_{2}Si_{2}. Silicon 121-123 spindlin 1 Homo sapiens 25-29 29376726-1 2018 In order to identify the spin contribution to superconducting pairing compatible with the so-called "hidden order", ^{29}Si nuclear magnetic resonance measurements have been performed using a high-quality single crystal of URu_{2}Si_{2}. Silicon 230-233 spindlin 1 Homo sapiens 25-29 27861163-4 2016 In this work we develop explicit schemes for spin-photon entanglement in several SiC defects: the silicon monovacancy, the silicon divacancy, and the NV center in SiC. Silicon 98-105 spindlin 1 Homo sapiens 45-49 28949629-2 2017 We investigate monolayer graphene on a Si/SiO_{2} substrate by resistively detected electron spin resonance. Silicon 39-41 spindlin 1 Homo sapiens 93-97 28555618-0 2017 Coherent control of the silicon-vacancy spin in diamond. Silicon 24-31 spindlin 1 Homo sapiens 40-44 28555618-2 2017 The negatively charged silicon-vacancy centre combines the advantages of its high-quality photonic properties with a ground-state electronic spin, which can be read out optically. Silicon 23-30 spindlin 1 Homo sapiens 141-145 28555618-4 2017 Here we report the measurement of optically detected magnetic resonance and the demonstration of coherent control of a single silicon-vacancy centre spin with a microwave field. Silicon 126-133 spindlin 1 Homo sapiens 149-153 28555618-6 2017 Our results enable the silicon-vacancy centre spin to become a controllable resource to establish spin-photon quantum interfaces. Silicon 23-30 spindlin 1 Homo sapiens 46-50 28555618-6 2017 Our results enable the silicon-vacancy centre spin to become a controllable resource to establish spin-photon quantum interfaces. Silicon 23-30 spindlin 1 Homo sapiens 98-102 29286819-0 2017 Silicon-Vacancy Spin Qubit in Diamond: A Quantum Memory Exceeding 10 ms with Single-Shot State Readout. Silicon 0-7 spindlin 1 Homo sapiens 16-20 29286821-0 2017 Photoexcited Muon Spin Spectroscopy: A New Method for Measuring Excess Carrier Lifetime in Bulk Silicon. Silicon 96-103 spindlin 1 Homo sapiens 18-22 29286821-1 2017 We have measured excess carrier lifetime in silicon using photoexcited muon spin spectroscopy. Silicon 44-51 spindlin 1 Homo sapiens 76-80 29192288-3 2017 We investigate this charge state control for two major spin qubits in 4H-SiC, the divacancy and silicon vacancy, obtaining bidirectional optical charge conversion between the bright and dark states of these defects. Silicon 96-103 spindlin 1 Homo sapiens 55-59 28949565-0 2017 Neutral Silicon-Vacancy Center in Diamond: Spin Polarization and Lifetimes. Silicon 8-15 spindlin 1 Homo sapiens 43-47 28949565-1 2017 We demonstrate optical spin polarization of the neutrally charged silicon-vacancy defect in diamond (SiV^{0}), an S=1 defect which emits with a zero-phonon line at 946 nm. Silicon 66-73 spindlin 1 Homo sapiens 23-27 27960447-2 2016 Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the weak hyperfine interaction and strong spin-orbit interaction. Silicon 20-22 spindlin 1 Homo sapiens 76-80 27960447-2 2016 Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the weak hyperfine interaction and strong spin-orbit interaction. Silicon 20-22 spindlin 1 Homo sapiens 146-150 27861163-4 2016 In this work we develop explicit schemes for spin-photon entanglement in several SiC defects: the silicon monovacancy, the silicon divacancy, and the NV center in SiC. Silicon 123-130 spindlin 1 Homo sapiens 45-49 27428274-2 2016 A key source of dephasing for an electron spin qubit in GaAs and in naturally occurring Si is the nuclear spin bath. Silicon 88-90 spindlin 1 Homo sapiens 42-46 27428274-2 2016 A key source of dephasing for an electron spin qubit in GaAs and in naturally occurring Si is the nuclear spin bath. Silicon 88-90 spindlin 1 Homo sapiens 106-110 27419582-1 2016 A totally anisotropic peculiar Rashba-Bychkov (RB) splitting of electronic bands was found on the Tl/Si(110)-(1x1) surface with C_{1h} symmetry by angle- and spin-resolved photoelectron spectroscopy and first-principles theoretical calculation. Silicon 101-103 spindlin 1 Homo sapiens 158-162 27367400-0 2016 Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon. Silicon 51-58 spindlin 1 Homo sapiens 31-35 26975515-0 2016 Interface Engineering to Create a Strong Spin Filter Contact to Silicon. Silicon 64-71 spindlin 1 Homo sapiens 41-45 26974012-0 2016 Spin Chains and Electron Transfer at Stepped Silicon Surfaces. Silicon 45-52 spindlin 1 Homo sapiens 0-4 26974012-3 2016 In some cases--specifically, for Si(553)-Au and Si(557)-Au--a large fraction of the silicon atoms at the exposed edge of this strip are known to be spin-polarized and charge-ordered along the edge. Silicon 33-35 spindlin 1 Homo sapiens 148-152 26974012-3 2016 In some cases--specifically, for Si(553)-Au and Si(557)-Au--a large fraction of the silicon atoms at the exposed edge of this strip are known to be spin-polarized and charge-ordered along the edge. Silicon 84-91 spindlin 1 Homo sapiens 148-152 26974012-5 2016 Here, we demonstrate theoretically as well as experimentally that the closely related Si(775)-Au surface has--despite its very similar overall structure--zero spin polarization at its step edge. Silicon 86-88 spindlin 1 Homo sapiens 159-163 26974012-9 2016 This finding opens the door to using techniques of surface chemistry and atom manipulation to create and control silicon spin chains. Silicon 113-120 spindlin 1 Homo sapiens 121-125 26975515-1 2016 Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality. Silicon 73-80 spindlin 1 Homo sapiens 138-142 26975515-1 2016 Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality. Silicon 110-117 spindlin 1 Homo sapiens 138-142 26550896-1 2015 We demonstrate high-fidelity electron spin read-out of a precision placed single donor in silicon via spin selective tunneling to either the D(+) or D(-) charge state of the donor. Silicon 90-97 spindlin 1 Homo sapiens 38-42 26434407-0 2015 Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot. Silicon 40-47 spindlin 1 Homo sapiens 6-10 26446292-4 2015 Pristine Si nanoterraces impose a strain on the neighboring Au-Si wires, which modifies both the band structure of metallic chains and the magnetic property of spin chains. Silicon 9-11 spindlin 1 Homo sapiens 160-164 26446292-4 2015 Pristine Si nanoterraces impose a strain on the neighboring Au-Si wires, which modifies both the band structure of metallic chains and the magnetic property of spin chains. Silicon 63-65 spindlin 1 Homo sapiens 160-164 26548556-0 2015 Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots. Silicon 84-86 spindlin 1 Homo sapiens 69-73 26548556-1 2015 Spin states of the electrons and nuclei of phosphorus donors in silicon are strong candidates for quantum information processing applications given their excellent coherence times. Silicon 64-71 spindlin 1 Homo sapiens 0-4 26550896-1 2015 We demonstrate high-fidelity electron spin read-out of a precision placed single donor in silicon via spin selective tunneling to either the D(+) or D(-) charge state of the donor. Silicon 90-97 spindlin 1 Homo sapiens 102-106 26089110-0 2015 Spin transport and Hanle effect in silicon nanowires using graphene tunnel barriers. Silicon 35-42 spindlin 1 Homo sapiens 0-4 26047255-0 2015 Dispersively Detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor. Silicon 47-54 spindlin 1 Homo sapiens 28-32 26047255-1 2015 We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Silicon 108-115 spindlin 1 Homo sapiens 40-44 26047255-8 2015 Our results open up the possibility to operate compact complementary metal-oxide semiconductor (CMOS) technology as a singlet-triplet qubit and make split-gate silicon nanowire architectures an ideal candidate for the study of spin dynamics. Silicon 160-167 spindlin 1 Homo sapiens 227-231 26024188-1 2015 We report an experimental demonstration of room-temperature spin transport in n-type Ge epilayers grown on a Si(001) substrate. Silicon 109-111 spindlin 1 Homo sapiens 60-64 24534908-5 2014 Here we report spin-tagged resonance fluorescence from the negatively charged silicon-vacancy centre. Silicon 78-85 spindlin 1 Homo sapiens 15-19 25541787-0 2014 Spin-lattice relaxation times of single donors and donor clusters in silicon. Silicon 69-76 spindlin 1 Homo sapiens 0-4 25541787-1 2014 An atomistic method of calculating the spin-lattice relaxation times (T1) is presented for donors in silicon nanostructures comprising of millions of atoms. Silicon 101-108 spindlin 1 Homo sapiens 39-43 25541787-2 2014 The method takes into account the full band structure of silicon including the spin-orbit interaction. Silicon 57-64 spindlin 1 Homo sapiens 79-83 25205440-3 2014 Here, taking a phosphorus donor electron spin in a (29)Si nuclear spin bath as our model system, we discover both theoretically and experimentally that many-body correlations in nanoscale nuclear spin baths produce identifiable signatures in decoherence of the central spin under multiple-pulse dynamical decoupling control. Silicon 55-57 spindlin 1 Homo sapiens 41-45 25205440-3 2014 Here, taking a phosphorus donor electron spin in a (29)Si nuclear spin bath as our model system, we discover both theoretically and experimentally that many-body correlations in nanoscale nuclear spin baths produce identifiable signatures in decoherence of the central spin under multiple-pulse dynamical decoupling control. Silicon 55-57 spindlin 1 Homo sapiens 66-70 25205440-3 2014 Here, taking a phosphorus donor electron spin in a (29)Si nuclear spin bath as our model system, we discover both theoretically and experimentally that many-body correlations in nanoscale nuclear spin baths produce identifiable signatures in decoherence of the central spin under multiple-pulse dynamical decoupling control. Silicon 55-57 spindlin 1 Homo sapiens 66-70 25205440-3 2014 Here, taking a phosphorus donor electron spin in a (29)Si nuclear spin bath as our model system, we discover both theoretically and experimentally that many-body correlations in nanoscale nuclear spin baths produce identifiable signatures in decoherence of the central spin under multiple-pulse dynamical decoupling control. Silicon 55-57 spindlin 1 Homo sapiens 66-70 25615329-2 2014 The silicon-vacancy center has recently attracted much interest because of its spin-accessible optical transitions and the quality of its optical spectrum. Silicon 4-11 spindlin 1 Homo sapiens 79-83 25615329-4 2014 Here, we report all-optical generation of coherent superpositions of spin states in the ground state of a negatively charged silicon-vacancy center using coherent population trapping. Silicon 125-132 spindlin 1 Homo sapiens 69-73 24904159-5 2014 This quantum-mechanical process is present in all nuclear spin systems, such as phosphorus or bismuth atoms in silicon, and offers a general route toward the electrical control of nuclear-spin-based devices. Silicon 111-118 spindlin 1 Homo sapiens 58-62 24904159-5 2014 This quantum-mechanical process is present in all nuclear spin systems, such as phosphorus or bismuth atoms in silicon, and offers a general route toward the electrical control of nuclear-spin-based devices. Silicon 111-118 spindlin 1 Homo sapiens 188-192 24727686-0 2014 Spin blockade and exchange in Coulomb-confined silicon double quantum dots. Silicon 47-54 spindlin 1 Homo sapiens 0-4 24487495-4 2014 In magnetic tunnel contacts to semiconductors (silicon and germanium), it is shown that a modest voltage (~200 mV) changes the thermal spin current induced by Seebeck spin tunnelling by a factor of five, because it modifies the relevant tunnelling states and thereby the spin-dependent thermoelectric parameters. Silicon 47-54 spindlin 1 Homo sapiens 135-139 24487495-4 2014 In magnetic tunnel contacts to semiconductors (silicon and germanium), it is shown that a modest voltage (~200 mV) changes the thermal spin current induced by Seebeck spin tunnelling by a factor of five, because it modifies the relevant tunnelling states and thereby the spin-dependent thermoelectric parameters. Silicon 47-54 spindlin 1 Homo sapiens 167-171 24487495-4 2014 In magnetic tunnel contacts to semiconductors (silicon and germanium), it is shown that a modest voltage (~200 mV) changes the thermal spin current induced by Seebeck spin tunnelling by a factor of five, because it modifies the relevant tunnelling states and thereby the spin-dependent thermoelectric parameters. Silicon 47-54 spindlin 1 Homo sapiens 167-171 25166836-0 2013 Spin-pump-induced spin transport in p-type Si at room temperature. Silicon 43-45 spindlin 1 Homo sapiens 0-4 26282973-0 2013 Five Stereoactive Orbitals on Silicon: Charge and Spin Localization in the n-Si4Me10(- ) Radical Anion by Trigonal Bipyramidalization. Silicon 30-37 spindlin 1 Homo sapiens 50-54 26282973-4 2013 According to natural orbital and localized orbital analyses, the charge-and-spin-carrying terminal Si atom uses five stereoactive hybrid orbitals in a trigonal bipyramidal geometry. Silicon 99-101 spindlin 1 Homo sapiens 76-80 24206505-0 2013 Rotating spin and giant splitting: unoccupied surface electronic structure of Tl/Si(111). Silicon 81-83 spindlin 1 Homo sapiens 9-13 23793304-0 2013 Atomic clock transitions in silicon-based spin qubits. Silicon 28-35 spindlin 1 Homo sapiens 42-46 23793304-7 2013 We find that electron spin qubits based on clock transitions become less sensitive to the local magnetic environment, including the presence of (29)Si nuclear spins as found in natural silicon. Silicon 148-150 spindlin 1 Homo sapiens 22-26 23793304-7 2013 We find that electron spin qubits based on clock transitions become less sensitive to the local magnetic environment, including the presence of (29)Si nuclear spins as found in natural silicon. Silicon 185-192 spindlin 1 Homo sapiens 22-26 25166836-0 2013 Spin-pump-induced spin transport in p-type Si at room temperature. Silicon 43-45 spindlin 1 Homo sapiens 18-22 25166836-1 2013 A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Silicon 113-120 spindlin 1 Homo sapiens 2-6 25166836-1 2013 A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Silicon 113-120 spindlin 1 Homo sapiens 71-75 25166836-1 2013 A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Silicon 113-120 spindlin 1 Homo sapiens 71-75 25166836-1 2013 A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Silicon 124-126 spindlin 1 Homo sapiens 2-6 25166836-1 2013 A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Silicon 124-126 spindlin 1 Homo sapiens 71-75 25166836-1 2013 A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Silicon 124-126 spindlin 1 Homo sapiens 71-75 25166836-2 2013 Ferromagnetic resonance and effective s-d coupling in Ni(80)Fe(20) results in spin accumulation at the Ni(80)Fe(20)/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. Silicon 118-120 spindlin 1 Homo sapiens 78-82 25166836-2 2013 Ferromagnetic resonance and effective s-d coupling in Ni(80)Fe(20) results in spin accumulation at the Ni(80)Fe(20)/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. Silicon 118-120 spindlin 1 Homo sapiens 141-145 25166836-2 2013 Ferromagnetic resonance and effective s-d coupling in Ni(80)Fe(20) results in spin accumulation at the Ni(80)Fe(20)/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. Silicon 118-120 spindlin 1 Homo sapiens 141-145 25166836-3 2013 The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. Silicon 115-117 spindlin 1 Homo sapiens 9-13 25166836-3 2013 The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. Silicon 115-117 spindlin 1 Homo sapiens 70-74 25166836-4 2013 This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature. Silicon 82-84 spindlin 1 Homo sapiens 64-68 23774081-0 2013 Spin readout and addressability of phosphorus-donor clusters in silicon. Silicon 64-71 spindlin 1 Homo sapiens 0-4 23804134-0 2013 Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting. Silicon 27-34 spindlin 1 Homo sapiens 0-4 23804134-4 2013 We demonstrate single-shot spin read-out and measure the spin relaxation for different valley configurations and dot occupancies, finding one-electron lifetimes exceeding 2 s. Spin relaxation occurs via phonon emission due to spin-orbit coupling between the valley states, a process not previously anticipated for silicon quantum dots. Silicon 314-321 spindlin 1 Homo sapiens 27-31 23804134-4 2013 We demonstrate single-shot spin read-out and measure the spin relaxation for different valley configurations and dot occupancies, finding one-electron lifetimes exceeding 2 s. Spin relaxation occurs via phonon emission due to spin-orbit coupling between the valley states, a process not previously anticipated for silicon quantum dots. Silicon 314-321 spindlin 1 Homo sapiens 57-61 23804134-4 2013 We demonstrate single-shot spin read-out and measure the spin relaxation for different valley configurations and dot occupancies, finding one-electron lifetimes exceeding 2 s. Spin relaxation occurs via phonon emission due to spin-orbit coupling between the valley states, a process not previously anticipated for silicon quantum dots. Silicon 314-321 spindlin 1 Homo sapiens 176-180 23804134-4 2013 We demonstrate single-shot spin read-out and measure the spin relaxation for different valley configurations and dot occupancies, finding one-electron lifetimes exceeding 2 s. Spin relaxation occurs via phonon emission due to spin-orbit coupling between the valley states, a process not previously anticipated for silicon quantum dots. Silicon 314-321 spindlin 1 Homo sapiens 57-61 23820766-6 2013 The discovered mechanism opens the window for the optical generation of a sizeable spin accumulation also in semiconductors without direct band gap such as Si or Ge. Silicon 156-158 spindlin 1 Homo sapiens 83-87 23774081-1 2013 The spin states of an electron bound to a single phosphorus donor in silicon show remarkably long coherence and relaxation times, which makes them promising building blocks for the realization of a solid-state quantum computer. Silicon 69-76 spindlin 1 Homo sapiens 4-8