PMID-sentid Pub_year Sent_text comp_official_name comp_offsetprotein_name organism prot_offset 31457279-7 2017 It is noteworthy that the eta-value of the DSSC based on ZnPSi2 (4.7%) is the highest among DSSCs based on porphyrin dyes with silicon-based anchoring groups. Silicon 127-134 endothelin receptor type A Homo sapiens 26-29 22947134-1 2012 We present a thin film (<20 mum) solar cell based on upgraded metallurgical-grade polycrystalline Si that utilizes silver nanoparticles atop silicon nanopillars created by block copolymer nanolithography to enhance light absorption and increase cell efficiency eta > 8%. Silicon 101-103 endothelin receptor type A Homo sapiens 66-69 25311524-9 2015 The results indicate that substitution of sulfur by nitrogen or oxygen in BDT unit, and silicon or phosphor in TT unit of pristine PTB7 leads to a higher eta as well as Deltamuge. Silicon 88-95 endothelin receptor type A Homo sapiens 154-157 23128184-1 2012 We demonstrate energy-conversion-efficiency (eta) enhancement of silicon (Si) solar cells by the heterogeneous integration of an In(x)Ga(1-x)As nanowire (NW) array on the rear surface. Silicon 65-72 endothelin receptor type A Homo sapiens 45-48 23128184-1 2012 We demonstrate energy-conversion-efficiency (eta) enhancement of silicon (Si) solar cells by the heterogeneous integration of an In(x)Ga(1-x)As nanowire (NW) array on the rear surface. Silicon 74-76 endothelin receptor type A Homo sapiens 45-48 22697556-1 2012 The self-diffusion coefficients D and the viscosities eta of elemental Ni, Cu, and Ni-Si alloys have been calculated over a wide temperature range by molecular dynamics simulations. Silicon 86-88 endothelin receptor type A Homo sapiens 54-57 22418107-4 2012 As a result, the combination of the above-mentioned nanostructures exhibits high optical absorption over a broad range of wavelengths and incident angles, along with a calculated short-circuit current density of JSC = 32.81 mA/cm2 and a power generation efficiency of eta = 22.70%, which corresponds to an improvement of approximately 42% over that of its bare single-crystalline Si counterpart. Silicon 380-382 endothelin receptor type A Homo sapiens 268-271 21465241-1 2011 Silicon-substituted hydroxyapaptite (Si-HA) coatings were prepared on titanium substrates by electrolytic deposition technique in electrolytes containing Ca(2+), PO(4)(3-) and SiO(3)(2-) ions with various SiO(3)(2-)/(PO(4)(3-) + SiO(3)(2-)) molar ratios (eta(si)). Silicon 0-7 endothelin receptor type A Homo sapiens 255-258 21465241-3 2011 The results show that the silicon amount in the coatings increases linearly to about 0.48 wt% at first with increasing eta(si) between 0 and 0.03, then increases slowly to about 0.55 wt% between 0.03 and 0.10 and finally maintains almost at a level around 0.55 wt% between 0.10 and 0.30. Silicon 26-33 endothelin receptor type A Homo sapiens 119-122 21465241-3 2011 The results show that the silicon amount in the coatings increases linearly to about 0.48 wt% at first with increasing eta(si) between 0 and 0.03, then increases slowly to about 0.55 wt% between 0.03 and 0.10 and finally maintains almost at a level around 0.55 wt% between 0.10 and 0.30. Silicon 26-28 endothelin receptor type A Homo sapiens 119-122 21465241-4 2011 The tree-like Si-HA crystals are observed in the coatings prepared in the electrolyte of eta(si) = 0.20. Silicon 14-16 endothelin receptor type A Homo sapiens 89-92 21465241-4 2011 The tree-like Si-HA crystals are observed in the coatings prepared in the electrolyte of eta(si) = 0.20. Silicon 93-95 endothelin receptor type A Homo sapiens 89-92 21465241-5 2011 And the presence of silicon in electrolytes decreases the thickness of the coatings, with effect being more significant as eta(si) increased. Silicon 20-27 endothelin receptor type A Homo sapiens 123-126 19772341-1 2009 Irradiation of silicon-bridged [1]ferrocenophane [Fe(eta-C(5)H(4))(2)SiMe(2)] (1) in the presence of substitutionally labile Lewis bases such as 4,4"-dimethyl-2,2"-bipyridine (Me(2)bpy) initiates ring-opening polymerization and oligomerization via cleavage of an iron-cyclopentadienyl bond. Silicon 15-22 endothelin receptor type A Homo sapiens 53-56 12167012-1 2002 The U(III) mixed-sandwich compound [U(eta-Cp)(eta-C(8)H(4)[Si(i)Pr(3)-1,4](2))] 1 may be prepared by sequential reaction of UI(3) with KCp followed by K(2)[C(8)H(4)[Si(i)Pr(3)-1,4](2)], and has been crystallographically characterized. Silicon 59-61 endothelin receptor type A Homo sapiens 46-49 20830081-4 1993 In the semiconductor material silicon, which has a refractive index n = 3.4, theoretical diffraction efficiencies as high as eta = 70% are predicted. Silicon 30-37 endothelin receptor type A Homo sapiens 125-128 20305775-0 2010 Formation of silicon-carbon bonds by photochemical irradiation of (eta-C(5)H(5))Fe(CO)(2)SiR(3) and (eta-C(5)H(5))Fe(CO)(2)Me to obtain R(3)SiMe. Silicon 13-20 endothelin receptor type A Homo sapiens 67-70 20305775-0 2010 Formation of silicon-carbon bonds by photochemical irradiation of (eta-C(5)H(5))Fe(CO)(2)SiR(3) and (eta-C(5)H(5))Fe(CO)(2)Me to obtain R(3)SiMe. Silicon 13-20 endothelin receptor type A Homo sapiens 101-104 20305775-5 2010 A mechanism involving the initial formation of the 16e(-) intermediate (eta(5)-C(5)H(5))Fe(CO)Me followed by oxidative addition of the Fe-Si bond, accounts for the experimental results obtained. Silicon 138-140 endothelin receptor type A Homo sapiens 72-75 19094044-6 2008 The smaller eta, S and Mg(2)Si particles contribute beneficially to fatigue life. Silicon 28-30 endothelin receptor type A Homo sapiens 12-15 7827969-12 1993 Comparing calculated eta values with ab initio calculations of this parameter, the largest difference was observed in the case of a Si-O-Si bond angle near 90 degrees. Silicon 132-134 endothelin receptor type A Homo sapiens 21-24 7827969-12 1993 Comparing calculated eta values with ab initio calculations of this parameter, the largest difference was observed in the case of a Si-O-Si bond angle near 90 degrees. Silicon 137-139 endothelin receptor type A Homo sapiens 21-24