PMID-sentid Pub_year Sent_text comp_official_name comp_offsetprotein_name organism prot_offset 31483596-1 2019 A method for suppressing impurities in GaN thin films grown via plasma-enhanced atomic deposition (PEALD) through the in situ pretreatment of Si (100) substrate with plasma was developed. Silicon 142-144 gigaxonin Homo sapiens 39-42 33510188-2 2021 In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Silicon 46-48 gigaxonin Homo sapiens 42-45 32213675-0 2020 Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: up to the solubility limit and beyond. Silicon 10-12 gigaxonin Homo sapiens 36-39 32213675-0 2020 Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: up to the solubility limit and beyond. Silicon 59-61 gigaxonin Homo sapiens 36-39 32213675-1 2020 We report a novel mechanism that allows the incorporation of Si into GaN nanowires up to and beyond the solubility limit. Silicon 61-63 gigaxonin Homo sapiens 69-72 31483596-3 2019 After pretreatment, the thickness of the interfacial layer between GaN films and the substrates decreases from 2.0 to 1.6 nm, and the oxygen impurity content at the GaN/Si (100) interface reduces from 34 to 12%. Silicon 169-171 gigaxonin Homo sapiens 67-70 31483596-3 2019 After pretreatment, the thickness of the interfacial layer between GaN films and the substrates decreases from 2.0 to 1.6 nm, and the oxygen impurity content at the GaN/Si (100) interface reduces from 34 to 12%. Silicon 169-171 gigaxonin Homo sapiens 165-168 31483596-2 2019 This approach leads to a superior GaN/Si (100) interface. Silicon 38-40 gigaxonin Homo sapiens 34-37 31385709-2 2019 Here, we study the spontaneous emission of GaN/(Al,Ga)N nanowire ensembles grown on Si(111) by plasma-assisted molecular beam epitaxy. Silicon 84-86 gigaxonin Homo sapiens 43-46 30704131-2 2019 However, since the driving circuits are typically composed of Si devices, numerous micro-LED pixels must be transferred from their GaN substrate to bond with the Si field-effect transistors (FETs). Silicon 162-164 gigaxonin Homo sapiens 131-134 29603996-0 2018 GaN microring waveguide resonators bonded to silicon substrate by a two-step polymer process. Silicon 45-52 gigaxonin Homo sapiens 0-3 29642435-1 2018 GaN nanorods, essentially free from crystal defects and exhibiting very sharp band-edge luminescence, have been grown by reactive direct-current magnetron sputter epitaxy onto Si (111) substrates at a low working pressure of 5 mTorr. Silicon 176-178 gigaxonin Homo sapiens 0-3 30544659-0 2018 Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN. Silicon 8-10 gigaxonin Homo sapiens 92-95 30544659-0 2018 Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN. Silicon 83-85 gigaxonin Homo sapiens 92-95 29603996-1 2018 Using a polymer bonding technique, GaN microring waveguide resonators were fabricated on a Si substrate for future hybrid integration of GaN and Si photonic devices. Silicon 91-93 gigaxonin Homo sapiens 35-38 29603996-1 2018 Using a polymer bonding technique, GaN microring waveguide resonators were fabricated on a Si substrate for future hybrid integration of GaN and Si photonic devices. Silicon 145-147 gigaxonin Homo sapiens 35-38 29603996-3 2018 A GaN crystalline layer of 1000 nm in thickness was grown on a Si(111) substrate by metal organic chemical vapor deposition using a buffer layer of 300 nm in thickness for the compensation of lattice constant mismatch between GaN and Si crystals. Silicon 63-65 gigaxonin Homo sapiens 2-5 29603996-3 2018 A GaN crystalline layer of 1000 nm in thickness was grown on a Si(111) substrate by metal organic chemical vapor deposition using a buffer layer of 300 nm in thickness for the compensation of lattice constant mismatch between GaN and Si crystals. Silicon 234-236 gigaxonin Homo sapiens 2-5 29603996-4 2018 The GaN/Si wafer was bonded to a Si(100) wafer by a two-step polymer process to prevent it from trapping air bubbles. Silicon 8-10 gigaxonin Homo sapiens 4-7 29603996-4 2018 The GaN/Si wafer was bonded to a Si(100) wafer by a two-step polymer process to prevent it from trapping air bubbles. Silicon 33-35 gigaxonin Homo sapiens 4-7 29118412-0 2017 Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates. Silicon 128-130 gigaxonin Homo sapiens 99-102 33101720-0 2018 Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates. Silicon 79-81 gigaxonin Homo sapiens 57-60 33101720-6 2018 The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG. Silicon 55-57 gigaxonin Homo sapiens 27-30 29118412-1 2017 Die-to-wafer heterogeneous integration of single-crystalline GaN film with CMOS compatible Si(100) substrate using the ion-cutting technique has been demonstrated. Silicon 91-93 gigaxonin Homo sapiens 61-64 22109019-0 2011 Single n-GaN microwire/p-Silicon thin film heterojunction light-emitting diode. Silicon 25-32 gigaxonin Homo sapiens 9-12 27505739-0 2016 Performance of GaN-on-Si-based vertical light-emitting diodes using silicon nitride electrodes with conducting filaments: correlation between filament density and device reliability. Silicon 22-24 gigaxonin Homo sapiens 15-18 26004038-0 2015 Spectroscopic XPEEM of highly conductive SI-doped GaN wires. Silicon 41-43 gigaxonin Homo sapiens 50-53 26563573-5 2015 Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. Silicon 94-96 gigaxonin Homo sapiens 71-74 25327280-4 2014 The comparison of the results obtained for GaN nanowire ensembles prepared on bare Si(111) and AlN buffered 6H-SiC(0001) reveals that the main source of the inhomogeneous strain is the random distortions caused by the coalescence of adjacent nanowires. Silicon 83-85 gigaxonin Homo sapiens 43-46 25121911-1 2014 This Letter describes a double-sided process to fabricate freestanding membrane devices on a GaN-on-silicon platform. Silicon 100-107 gigaxonin Homo sapiens 93-96 24826797-3 2014 Herein we demonstrate that Si-doped GaN nanowires (NWs) with a 97% rationally constructed m-plane can directly convert methane into benzene and molecular hydrogen under ultraviolet (UV) illumination at rt. Silicon 27-29 gigaxonin Homo sapiens 36-39 24826797-5 2014 The incorporation of a Si-donor or Mg-acceptor dopants into GaN also has a large influence on the photocatalytic performance. Silicon 23-25 gigaxonin Homo sapiens 60-63 23130785-6 2012 These N-polar GaN nanowires are shown to be accidental in that the necessary polarity inversion is induced by the formation of Si(x)N. The present findings thus demonstrate that spontaneously formed GaN nanowires are irrevocably N-polar. Silicon 127-129 gigaxonin Homo sapiens 14-17 23130785-6 2012 These N-polar GaN nanowires are shown to be accidental in that the necessary polarity inversion is induced by the formation of Si(x)N. The present findings thus demonstrate that spontaneously formed GaN nanowires are irrevocably N-polar. Silicon 127-129 gigaxonin Homo sapiens 199-202 22460768-1 2012 We report on the electrochemical characteristics of GaN nanowire (NW) ensembles grown by plasma-assisted molecular beam epitaxy on Si111 substrates and on the influence of Si and Mg doping. Silicon 131-133 gigaxonin Homo sapiens 52-55 28833605-0 2017 Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si. Silicon 0-2 gigaxonin Homo sapiens 17-20 28833605-0 2017 Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si. Silicon 0-2 gigaxonin Homo sapiens 83-86 28833605-0 2017 Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si. Silicon 90-92 gigaxonin Homo sapiens 17-20 28833605-0 2017 Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si. Silicon 90-92 gigaxonin Homo sapiens 83-86 28833605-4 2017 The growth of thick (19 microm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 x 107 cm-2 achieved to date in GaN-on-Si is demonstrated. Silicon 68-70 gigaxonin Homo sapiens 54-57 28833605-4 2017 The growth of thick (19 microm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 x 107 cm-2 achieved to date in GaN-on-Si is demonstrated. Silicon 68-70 gigaxonin Homo sapiens 155-158 28833605-5 2017 With these advances, the first vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost-effective high power device paradigm on an Si CMOS platform are demonstrated. Silicon 102-104 gigaxonin Homo sapiens 40-43 27505731-1 2016 Laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Silicon 104-111 gigaxonin Homo sapiens 118-121 27505731-4 2016 In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. Silicon 33-35 gigaxonin Homo sapiens 36-39 26902654-1 2016 This paper assesses the effects of Si doping on the properties of nonpolar m-plane GaN/AlGaN quantum wells (QWs) designed for intersubband (ISB) absorption in the far-infrared spectral range. Silicon 35-37 gigaxonin Homo sapiens 83-86 26046390-1 2015 We investigate nontrivial surface effects on the optical properties of self-assembled crystalline GaN nanotubes grown on Si substrates. Silicon 121-123 gigaxonin Homo sapiens 98-101 26373120-0 2015 Comparison of Strain in GaN-Based Blue Light-Emitting Diode Grown on Silicon(111) and Sapphire Substrates. Silicon 69-76 gigaxonin Homo sapiens 24-27 26373120-1 2015 We compare the strain states and device performances of GaN-based blue light-emitting diodes (LEDs) grown on Si(111) and sapphire substrates. Silicon 109-111 gigaxonin Homo sapiens 56-59 26373120-3 2015 These analyses reveal that GaN layer grown on Si has a residual tensile strain in contrast to a compressive strain for GaN on sapphire, and quantum wells (QWs) on GaN/Si experience reduced lattice mismatch than those of GaN/sapphire. Silicon 46-48 gigaxonin Homo sapiens 27-30 26373120-4 2015 When external quantum efficiencies of LED on sapphire and Si substrates are compared, the LED on Si shows better efficiency droop characteristics and this is attributed to a decrease in piezo-electric field strength in InGaN/GaN layers owing to reduced lattice mismatch. Silicon 97-99 gigaxonin Homo sapiens 221-224 26028318-3 2015 Defect-free n-GaN NRs were grown on a highly ordered graphene monolayer on Si without forming any metal-catalyst or droplet seeds. Silicon 75-77 gigaxonin Homo sapiens 14-17 25758029-0 2015 High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111). Silicon 60-67 gigaxonin Homo sapiens 11-14 25758029-2 2015 This work demonstrates that this limitation can be overcome by m-planar core-shell InGaN/GaN nanowire LEDs grown on Si(111). Silicon 116-118 gigaxonin Homo sapiens 85-88 25654749-1 2015 InGaN/GaN disk-in-nanowire heterostructures on silicon substrates have emerged as important gain media for the realization of visible light sources. Silicon 47-54 gigaxonin Homo sapiens 2-5 24837761-2 2014 Thanks to a cross-sectional approach, scanning electron beam probing techniques were employed here to obtain a nanoscale spatially resolved analysis of GaN core-shell wire p-n junctions grown by catalyst-free metal-organic vapor phase epitaxy on GaN and Si substrates. Silicon 254-256 gigaxonin Homo sapiens 152-155 24369453-0 2013 Effect of same-temperature GaN cap layer on the InGaN/GaN multiquantum well of green light-emitting diode on silicon substrate. Silicon 109-116 gigaxonin Homo sapiens 27-30 24369453-0 2013 Effect of same-temperature GaN cap layer on the InGaN/GaN multiquantum well of green light-emitting diode on silicon substrate. Silicon 109-116 gigaxonin Homo sapiens 50-53 24369453-1 2013 GaN green LED was grown on Si (111) substrate by MOCVD. Silicon 27-29 gigaxonin Homo sapiens 0-3 23373938-0 2013 Blocking growth by an electrically active subsurface layer: the effect of Si as an antisurfactant in the growth of GaN. Silicon 74-76 gigaxonin Homo sapiens 115-118 23373938-1 2013 Combining aberration corrected high resolution transmission electron microscopy and density functional theory calculations we propose an explanation of the antisurfactant effect of Si in GaN growth. Silicon 181-183 gigaxonin Homo sapiens 187-190 22109019-3 2011 These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto pre-patterned electrodes on a p-type Si (100) substrate. Silicon 129-131 gigaxonin Homo sapiens 13-16 34613168-8 2021 While doping GaN with Fe or Si elements, the introduced free carriers modify the electronic interband transition. Silicon 28-30 gigaxonin Homo sapiens 13-16 21832611-1 2008 We investigated GaN-based heterostructures grown on three-dimensionally patterned Si(111) substrates by metal organic vapour phase epitaxy, with the goal of fabricating well controlled high quality, defect reduced GaN-based nanoLEDs. Silicon 82-84 gigaxonin Homo sapiens 16-19 21705828-3 2011 Based on these results not only Si-Ge heterojunctions seem to be possible using the vapor-liquid-solid growth process but also heterojunctions in optoelectronic III-V compounds such as InGaAs/GaAs or group III nitride compounds such as InGaN/GaN as well as axial p-n junctions in Si nanowires. Silicon 32-34 gigaxonin Homo sapiens 238-241 21747567-0 2011 Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper. Silicon 78-80 gigaxonin Homo sapiens 27-30 12639240-4 2003 As expected from its excitonic character, the near band edge emission intensity depends linearly (m = 1) in silicon doped GaN and superlinearly (m = 1.2) in undoped GaN on the electron beam current. Silicon 108-115 gigaxonin Homo sapiens 122-125 35387996-6 2022 Wafer-scale epilayer transfer and the bond-before-pattern technique were used to directly integrate 5-microm-scale GaN LED arrays on a foreign silicon substrate. Silicon 143-150 gigaxonin Homo sapiens 115-118