PMID-sentid	Pub_year	Sent_text		comp_official_name	comp_offsetprotein_name	organism	prot_offset
29565362-5	2018	Alternative materials are therefore required to achieve continuous emission: inorganic materials that contain spin defects, such as diamond and silicon carbide, have been proposed.	silicon carbide	144-159	spindlin 1	Homo sapiens	110-114	
32955339-0	2020	Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room Temperature.	silicon carbide	39-54	spindlin 1	Homo sapiens	12-16	
32955339-1	2020	We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature.	silicon carbide	76-91	spindlin 1	Homo sapiens	33-37	
32955339-6	2020	These results establish silicon carbide as a highly promising hybrid platform for on-chip spin-optomechanical quantum control enabling engineered interactions at room temperature.	silicon carbide	24-39	spindlin 1	Homo sapiens	90-94	
31532999-4	2019	Here, we investigate charge state manipulation of individual silicon vacancies in silicon carbide, a system which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions.	silicon carbide	82-97	spindlin 1	Homo sapiens	162-166	
31532999-4	2019	Here, we investigate charge state manipulation of individual silicon vacancies in silicon carbide, a system which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions.	silicon carbide	82-97	spindlin 1	Homo sapiens	198-202	
32433556-0	2020	Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide.	silicon carbide	108-123	spindlin 1	Homo sapiens	0-4	
32433556-6	2020	Our results provide a deep insight into the system"s spin-phonon-photon physics and underline the potential of the industrially compatible silicon carbide platform for measurement-based entanglement distribution and photonic cluster state generation.	silicon carbide	139-154	spindlin 1	Homo sapiens	53-57	
31806809-1	2019	Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication.	silicon carbide	16-31	spindlin 1	Homo sapiens	0-4	
31806809-1	2019	Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication.	silicon carbide	16-31	spindlin 1	Homo sapiens	75-79	
31806809-1	2019	Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication.	silicon carbide	16-31	spindlin 1	Homo sapiens	120-124	
27861163-0	2016	Spin-photon entanglement interfaces in silicon carbide defect centers.	silicon carbide	39-54	spindlin 1	Homo sapiens	0-4	
29192288-1	2017	Defects in silicon carbide (SiC) have emerged as a favorable platform for optically active spin-based quantum technologies.	silicon carbide	11-26	spindlin 1	Homo sapiens	91-95	
29192288-1	2017	Defects in silicon carbide (SiC) have emerged as a favorable platform for optically active spin-based quantum technologies.	silicon carbide	28-31	spindlin 1	Homo sapiens	91-95	
34732705-0	2021	Stability and molecular pathways to the formation of spin defects in silicon carbide.	silicon carbide	69-84	spindlin 1	Homo sapiens	53-57	
22727848-0	2012	Spin-lattice relaxation in aluminum-doped semiconducting 4H and 6H polytypes of silicon carbide.	silicon carbide	80-95	spindlin 1	Homo sapiens	0-4	
34903793-0	2021	The spin-dependent properties of silicon carbide/graphene nanoribbons junctions with vacancy defects.	silicon carbide	33-48	spindlin 1	Homo sapiens	4-8	
34903793-1	2021	We have designed high-efficient spin-filtering junctions composed of graphene and silicon carbide nanoribbons.	silicon carbide	82-97	spindlin 1	Homo sapiens	32-36	
34732705-3	2021	Here, we elucidate spin defect formation processes in a binary crystal for a key qubit candidate-the divacancy complex (VV) in silicon carbide (SiC).	silicon carbide	127-142	spindlin 1	Homo sapiens	19-23	
34732705-3	2021	Here, we elucidate spin defect formation processes in a binary crystal for a key qubit candidate-the divacancy complex (VV) in silicon carbide (SiC).	silicon carbide	144-147	spindlin 1	Homo sapiens	19-23	
34620847-0	2021	Author Correction: Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide.	silicon carbide	127-142	spindlin 1	Homo sapiens	19-23	
34639976-0	2021	Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms.	silicon carbide	41-56	spindlin 1	Homo sapiens	0-4