PMID-sentid	Pub_year	Sent_text		comp_official_name	comp_offsetprotein_name	organism	prot_offset
24826797-5	2014	The incorporation of a Si-donor or Mg-acceptor dopants into GaN also has a large influence on the photocatalytic performance.	Magnesium	35-37	gigaxonin	Homo sapiens	60-63	
26855295-0	2016	Cathodoluminescence study of Mg activation in non-polar and semi-polar faces of undoped/Mg-doped GaN core-shell nanorods.	Magnesium	29-31	gigaxonin	Homo sapiens	97-100	
32040646-0	2020	Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN.	Magnesium	44-46	gigaxonin	Homo sapiens	53-56	
28290480-0	2017	Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa delta doping in (AlN)m/(GaN)n superlattice.	Magnesium	36-38	gigaxonin	Homo sapiens	78-81	
22587269-3	2012	We show that the ultraviolet photoluminescence peak attributed to Mg acceptors in GaN is likely related to Mg-H complexes, explaining the results of photoluminescence and electron paramagnetic resonance experiments.	Magnesium	66-68	gigaxonin	Homo sapiens	82-85	
19420534-1	2009	We report on the effect of Mg doping on the properties of GaN nanowires grown by plasma assisted molecular beam epitaxy.	Magnesium	27-29	gigaxonin	Homo sapiens	58-61	
34313418-6	2021	The Mg doping concentration and distribution profile of the p++-GaN shell were inspected using three-dimensional atom probe tomography.	Magnesium	4-6	gigaxonin	Homo sapiens	64-67	
34313418-9	2021	Excluding the Mg atoms contained in the clusters, the remaining Mg doping concentration in the p++-GaN region was calculated to be 1.1 x 1020 cm-3.	Magnesium	64-66	gigaxonin	Homo sapiens	99-102	
23259506-1	2013	Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes.	Magnesium	132-141	gigaxonin	Homo sapiens	148-151	
23259506-1	2013	Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes.	Magnesium	132-141	gigaxonin	Homo sapiens	153-161	
22460768-1	2012	We report on the electrochemical characteristics of GaN nanowire (NW) ensembles grown by plasma-assisted molecular beam epitaxy on Si111 substrates and on the influence of Si and Mg doping.	Magnesium	179-181	gigaxonin	Homo sapiens	52-55	
16090332-3	2005	High-resolution transmission electron microscopy and density functional theory studies indicate that the atomically abrupt semiconducting GaN(111)/MgO(111) interface has a Mg-O-N-Ga stacking, where the N atom is bonded to O at a top site.	Magnesium	147-149	gigaxonin	Homo sapiens	138-141