PMID-sentid Pub_year Sent_text comp_official_name comp_offsetprotein_name organism prot_offset 34597090-3 2021 We show that electron spin generation in InAs/GaAs quantum-dot structures is completely quenched upon spin injection from adjacent InGaAs wetting layers at the Fano resonance due to coupling of light-hole excitons and the heavy-hole continuum of the interband optical transitions, mediated by an anisotropic exchange interaction. gallium arsenide 46-50 spindlin 1 Homo sapiens 22-26 34597090-3 2021 We show that electron spin generation in InAs/GaAs quantum-dot structures is completely quenched upon spin injection from adjacent InGaAs wetting layers at the Fano resonance due to coupling of light-hole excitons and the heavy-hole continuum of the interband optical transitions, mediated by an anisotropic exchange interaction. gallium arsenide 46-50 spindlin 1 Homo sapiens 102-106 34397233-4 2021 The measured g factor is understood in terms of spin-orbit interaction induced isotropic and anisotropic corrections to the GaAs bulk g factor. gallium arsenide 124-128 spindlin 1 Homo sapiens 48-52 35209356-0 2022 Observation of the spin-Hall effect in Pt/GaAs by circular polarized photoconductivity. gallium arsenide 42-46 spindlin 1 Homo sapiens 19-23 35209356-1 2022 Electrically generated spin accumulation due to the spin Hall effect of Pt/GaAs is detected by circular polarized photoconductivity (CPPC), which shows electron spins with different polarizations accumulated around opposite sample boundaries. gallium arsenide 75-79 spindlin 1 Homo sapiens 23-27 35209356-1 2022 Electrically generated spin accumulation due to the spin Hall effect of Pt/GaAs is detected by circular polarized photoconductivity (CPPC), which shows electron spins with different polarizations accumulated around opposite sample boundaries. gallium arsenide 75-79 spindlin 1 Homo sapiens 52-56 33287117-3 2020 Incorporation of Bi into GaAs strongly enhances the spin-orbit coupling strength in this semiconductor, and the same has been expected for the (Ga,Mn)(Bi,As) alloy. gallium arsenide 25-29 spindlin 1 Homo sapiens 52-56 9944644-0 1988 Spin-lattice relaxation in p-type gallium arsenide single crystals. gallium arsenide 34-50 spindlin 1 Homo sapiens 0-4 35009939-3 2022 In addition, we found that the current-induced spin polarization direction of p-doped bulk GaAs grown in the (001) direction lies in the sample plane and is perpendicular to the applied electric field, which is the same as that in GaAs quantum well. gallium arsenide 91-95 spindlin 1 Homo sapiens 47-51 33619343-0 2021 Broadband optical spin dependent reflection in self-assembled GaAs-based nanowires asymmetrically hybridized with Au. gallium arsenide 62-66 spindlin 1 Homo sapiens 18-22 30787328-0 2019 Spin-polarized magneto-electronic properties in buckled monolayer GaAs. gallium arsenide 66-70 spindlin 1 Homo sapiens 0-4 32138388-3 2020 Here, we investigate the Longitudinal Spin Seebeck Effect in films with a Co 2 FeAl/W bilayer structure grown onto GaAs (100) substrate, systems having induced uniaxial magnetic anisotropy combined with cubic magnetic anisotropy. gallium arsenide 115-119 spindlin 1 Homo sapiens 38-42 31695044-4 2019 The spin qubit is a resonant exchange qubit hosted in a GaAs triple quantum dot. gallium arsenide 56-60 spindlin 1 Homo sapiens 4-8 16090489-1 2005 Using scanning Kerr microscopy, we directly acquire two-dimensional images of spin-polarized electrons flowing laterally in bulk epilayers of n:GaAs. gallium arsenide 144-148 spindlin 1 Homo sapiens 78-82 27960447-0 2016 Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot. gallium arsenide 46-50 spindlin 1 Homo sapiens 18-22 27432047-3 2016 Here, we provide evidence of two-terminal electrical spin injection and detection in Fe/GaAs/Fe vertical spin-valves (SVs) with the GaAs layer of 50 nanometers thick and top and bottom Fe electrodes deposited by molecular beam epitaxy. gallium arsenide 88-92 spindlin 1 Homo sapiens 53-57 25085146-4 2014 Inverse photoemission spectroscopy experiments are performed with GaAs crystals as spin-polarized electron sources and a UV bandpass photon detector. gallium arsenide 66-70 spindlin 1 Homo sapiens 83-87 19940922-3 2009 Recently it has become possible to induce and detect spin polarization in otherwise non-magnetic semiconductors (gallium arsenide and silicon) using all-electrical structures, but so far only at temperatures below 150 K and in n-type materials, which limits further development. gallium arsenide 113-129 spindlin 1 Homo sapiens 53-57 19706957-1 2009 Optical spin injection is studied in novel laterally-arranged self-assembled InAs/GaAs quantum dot structures, by using optical orientation measurements in combination with tunable laser spectroscopy. gallium arsenide 82-86 spindlin 1 Homo sapiens 8-12 12513231-1 2002 We investigate antilocalization due to spin-orbit coupling in ballistic GaAs quantum dots. gallium arsenide 72-76 spindlin 1 Homo sapiens 39-43 14702080-7 2004 We use ultrafast optical techniques to spatiotemporally resolve spin dynamics in strained gallium arsenide and indium gallium arsenide epitaxial layers. gallium arsenide 90-106 spindlin 1 Homo sapiens 64-68 12906563-1 2003 We report measurements of spin transitions for GaAs quantum dots in the Coulomb blockade regime and compare ground and excited state transport spectroscopy to direct measurements of the spin polarization of emitted current. gallium arsenide 47-51 spindlin 1 Homo sapiens 26-30 11289866-0 2001 Spin-orbit effects in a GaAs quantum dot in a parallel magnetic field. gallium arsenide 24-28 spindlin 1 Homo sapiens 0-4 11461483-0 2001 Room-temperature spin injection from Fe into GaAs. gallium arsenide 45-49 spindlin 1 Homo sapiens 17-21