PMID-sentid Pub_year Sent_text comp_official_name comp_offsetprotein_name organism prot_offset 25412649-0 2014 Extraordinary N atom tunneling in formation of InN shell layer on GaN nanorod m-plane sidewall. Nitrogen 14-15 gigaxonin Homo sapiens 66-69 21137731-0 2010 Light extraction efficiency enhancement of GaN-based light emitting diodes on n-GaN layer using a SiO2 photonic quasi-crystal overgrowth. Nitrogen 15-16 gigaxonin Homo sapiens 43-46 23918223-5 2013 The formation of a Ga-N(CH3)(CH2CH3) bond during the ALD of HfO2 using TEMAH as the reactant without breaking the Hf-N bond could be the key part of the mechanism behind the formation of an interface layer at the HfO2/GaN interface. Nitrogen 22-23 gigaxonin Homo sapiens 218-221 23215512-0 2012 Identification of the nitrogen split interstitial (N-N)(N) in GaN. Nitrogen 22-30 gigaxonin Homo sapiens 62-65 23215512-1 2012 Combining electron paramagnetic resonance, density functional theory, and positron annihilation spectroscopy (PAS), we identify the nitrogen interstitial defect in GaN. Nitrogen 132-140 gigaxonin Homo sapiens 164-167 21137731-0 2010 Light extraction efficiency enhancement of GaN-based light emitting diodes on n-GaN layer using a SiO2 photonic quasi-crystal overgrowth. Nitrogen 15-16 gigaxonin Homo sapiens 80-83 21727512-5 2006 The decrease in emission efficiency at high temperature is attributed to the activation of carriers from the GaN dot to the nitrogen vacancy (V(N)) state of the Al(0.11)Ga(0.89)N barrier layer. Nitrogen 124-132 gigaxonin Homo sapiens 109-112 19928283-0 2009 Nitrogen ion induced 2D-GaN layer formation of GaAs (001) surface. Nitrogen 0-8 gigaxonin Homo sapiens 24-27 19928283-1 2009 This study demonstrates the formation of two-dimensional GaN on GaAs (001) surface by bombardment of nitrogen ions at room temperature. Nitrogen 101-109 gigaxonin Homo sapiens 57-60 33803174-0 2021 Nitrogen Dissolution in Liquid Ga and Fe: Comprehensive Ab Initio Analysis, Relevance for Crystallization of GaN. Nitrogen 0-8 gigaxonin Homo sapiens 109-112 12398616-0 2002 Giant magnetic moments of nitrogen-doped Mn clusters and their relevance to ferromagnetism in Mn-doped GaN. Nitrogen 26-34 gigaxonin Homo sapiens 103-106 12190488-2 2002 It is, however, not recognized that the same amount of N can also qualitatively alter the electronic behavior of hydrogen: First-principles calculations reveal that, in GaAsN, a H atom bonds to N and can act as a donor in its own right, whereas in GaAs and GaN, H is amphoteric, causing passivation instead. Nitrogen 55-56 gigaxonin Homo sapiens 257-260 34259497-2 2021 The process leads to a clean nitrogen-terminated GaN surface that bonds well to the MoS2 film revealing a 2 x 2 reconstruction at the interface observed in low-energy electron diffraction (LEED). Nitrogen 29-37 gigaxonin Homo sapiens 49-52 34399419-2 2021 We investigate the role of the main air constituents nitrogen, oxygen and water on the efficiency of radiative recombination in GaN nanostructures as a function of different surface treatments and at temperatures up to 200 C. Oxygen and water exposures exhibit a complex behavior as they can both act quenching and enhancing on the photoluminescence intensity dependent on the temperature. Nitrogen 53-61 gigaxonin Homo sapiens 128-131 34504143-0 2021 Smart-cut-like laser slicing of GaN substrate using its own nitrogen. Nitrogen 60-68 gigaxonin Homo sapiens 32-35 35629563-3 2022 By means of using the EC etching technique, the n++-layers can be converted into nanoporous (NP) layers whilst the undoped GaN remains intact, leading to a significantly high contrast in refractive index between NP-layer and undoped GaN and thus forming a DBR. Nitrogen 48-49 gigaxonin Homo sapiens 233-236 34069925-5 2021 In addition, NH2- produced via the auto coupling ionization of NH3 has strong nucleophilic ability, and is able to fill nitrogen vacancies near the GaN surface created by high temperature process. Nitrogen 120-128 gigaxonin Homo sapiens 148-151 33555173-4 2021 The combination of the CrBr3 monolayer with N-terminated GaN nanosheets leads to enhanced FM coupling via superexchange interactions between the Cr-t2g and Cr-eg orbitals, consequently resulting in a Curie temperature of CrBr3 of up to 67 K. Moreover, self-doped p-n junctions can be naturally formed in the heterostructures without additional modulation of external fields. Nitrogen 9-10 gigaxonin Homo sapiens 57-60 35208294-1 2022 In this study, the breakdown behavior of a calibrated depletion mode AlGaN/GaN transistor with a nitrogen-implanted gate region was simulated and analyzed using Sentaurus TCAD simulation, with particular emphasis on the metal contact design rule for a GaN-based high-electron-mobility transistor (HEMT) device with a variety of 2DEG concentrations grown on a silicon substrate. Nitrogen 97-105 gigaxonin Homo sapiens 75-78 35208294-1 2022 In this study, the breakdown behavior of a calibrated depletion mode AlGaN/GaN transistor with a nitrogen-implanted gate region was simulated and analyzed using Sentaurus TCAD simulation, with particular emphasis on the metal contact design rule for a GaN-based high-electron-mobility transistor (HEMT) device with a variety of 2DEG concentrations grown on a silicon substrate. Nitrogen 97-105 gigaxonin Homo sapiens 252-255 35208294-6 2022 When the contact position was far away from the AlGaN/GaN, the breakdown voltage of the nitrogen-implanted gated device decreased by 41% because of the relatively low electron density and weak induced piezoelectric effect. Nitrogen 88-96 gigaxonin Homo sapiens 54-57 29642435-0 2018 Effects of N2 Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy. Nitrogen 11-13 gigaxonin Homo sapiens 79-82 32711626-3 2020 The detector based on GaN p-GaN/oxide layer/n-GaN structure showed high UV response with fast speed. Nitrogen 20-21 gigaxonin Homo sapiens 22-25 32711626-3 2020 The detector based on GaN p-GaN/oxide layer/n-GaN structure showed high UV response with fast speed. Nitrogen 20-21 gigaxonin Homo sapiens 28-31 32711626-3 2020 The detector based on GaN p-GaN/oxide layer/n-GaN structure showed high UV response with fast speed. Nitrogen 20-21 gigaxonin Homo sapiens 28-31 31241343-1 2019 We have shown that both the morphology and elongation mechanism of GaN nanowires homoepitaxially grown by plasma-assisted molecular beam epitaxy (PA-MBE) on a [0001]-oriented GaN nanowire template are strongly affected by the nominal gallium/nitrogen flux ratio as well as by additional Ga flux diffusing from the side walls. Nitrogen 242-250 gigaxonin Homo sapiens 67-70 33004847-5 2020 After irradiation, the GaN was annealed in a nitrogen environment at 950 C for 30 min. Nitrogen 45-53 gigaxonin Homo sapiens 23-26 29642435-4 2018 Yet, lower N2 partial pressures eventually led to the growth of continuous GaN films. Nitrogen 11-13 gigaxonin Homo sapiens 75-78 27459343-1 2016 Nitrogen incorporation to produce negative fixed charge in Al2O3 gate insulator layers is investigated as a path to achieve enhancement mode GaN device operation. Nitrogen 0-8 gigaxonin Homo sapiens 141-144 29109806-3 2017 As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along [11[Formula: see text]0]. Nitrogen 7-8 gigaxonin Homo sapiens 60-63