PMID-sentid Pub_year Sent_text comp_official_name comp_offsetprotein_name organism prot_offset 34473524-0 2021 High-Contrast Plasmonic-Enhanced Shallow Spin Defects in Hexagonal Boron Nitride for Quantum Sensing. boron nitride 67-80 spindlin 1 Homo sapiens 41-45 33811078-0 2021 Room temperature coherent control of spin defects in hexagonal boron nitride. boron nitride 63-76 spindlin 1 Homo sapiens 37-41 34541839-0 2021 First-Principles Predictions of Out-of-Plane Group IV and V Dimers as High-Symmetry, High-Spin Defects in Hexagonal Boron Nitride. boron nitride 116-129 spindlin 1 Homo sapiens 90-94 34541839-3 2021 However, the number of high-symmetry, high-spin defects that are desirable for developing spin qubits in h-BN is highly limited. boron nitride 105-109 spindlin 1 Homo sapiens 43-47 34541839-3 2021 However, the number of high-symmetry, high-spin defects that are desirable for developing spin qubits in h-BN is highly limited. boron nitride 105-109 spindlin 1 Homo sapiens 90-94 34541839-10 2021 Our results broaden the scope of high-spin defect candidates that would be useful for the development of spin-based solid-state quantum technologies in two-dimensional hexagonal boron nitride. boron nitride 178-191 spindlin 1 Homo sapiens 38-42 34541839-10 2021 Our results broaden the scope of high-spin defect candidates that would be useful for the development of spin-based solid-state quantum technologies in two-dimensional hexagonal boron nitride. boron nitride 178-191 spindlin 1 Homo sapiens 105-109 34958574-1 2022 We report optically detected magnetic resonance (ODMR) measurements of an ensemble of spin-1 negatively charged boron vacancies in hexagonal boron nitride. boron nitride 141-154 spindlin 1 Homo sapiens 86-92 34601757-1 2022 Spin defects in hexagonal boron nitride, and specifically the negatively charged boron vacancy (VB - ) centres, are emerging candidates for quantum sensing. boron nitride 26-39 spindlin 1 Homo sapiens 0-4 34601757-6 2022 The work will be pivotal to progress in quantum sensing employing 2D materials, and realisation of nanophotonic devices with spin defects in hexagonal boron nitride. boron nitride 151-164 spindlin 1 Homo sapiens 125-129 34473524-1 2021 The recently discovered spin defects in hexagonal boron nitride (hBN), a layered van der Waals material, have great potential in quantum sensing. boron nitride 50-63 spindlin 1 Homo sapiens 24-28 34473524-1 2021 The recently discovered spin defects in hexagonal boron nitride (hBN), a layered van der Waals material, have great potential in quantum sensing. boron nitride 65-68 spindlin 1 Homo sapiens 24-28 35071868-0 2022 Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride. boron nitride 60-73 spindlin 1 Homo sapiens 14-18 35439014-0 2022 Excited-State Spectroscopy of Spin Defects in Hexagonal Boron Nitride. boron nitride 56-69 spindlin 1 Homo sapiens 30-34 35315850-0 2022 Spin defects in hexagonal boron nitride for strain sensing on nanopillar arrays. boron nitride 26-39 spindlin 1 Homo sapiens 0-4 35071868-3 2022 Here, we demonstrate that an ensemble of negatively charged boron vacancies (VB -) with good spin properties in hexagonal boron nitride (hBN) can be generated by ion implantation. boron nitride 122-135 spindlin 1 Homo sapiens 93-97 35071868-3 2022 Here, we demonstrate that an ensemble of negatively charged boron vacancies (VB -) with good spin properties in hexagonal boron nitride (hBN) can be generated by ion implantation. boron nitride 137-140 spindlin 1 Homo sapiens 93-97 35071868-7 2022 Our results provide a simple and practicable method to create spin defects in hBN, which is of great significance for realizing integrated hBN-based devices. boron nitride 139-142 spindlin 1 Homo sapiens 62-66 29185121-1 2017 Spin-polarized first-principles total-energy calculations have been performed to investigate the possible chain reaction of acetylene molecules mediated by hydrogen abstraction on hydrogenated hexagonal boron nitride monolayers. boron nitride 203-216 spindlin 1 Homo sapiens 0-4 31276417-3 2019 Here, using density functional theory (DFT) calculations, we investigate the spin-dependent electronic transport across vdW magnetic tunnel junctions (MTJs) composed of Fe3GeTe2 ferromagnetic electrodes and a graphene or hexagonal boron nitride (h-BN) spacer layer. boron nitride 231-244 spindlin 1 Homo sapiens 77-81 31276417-3 2019 Here, using density functional theory (DFT) calculations, we investigate the spin-dependent electronic transport across vdW magnetic tunnel junctions (MTJs) composed of Fe3GeTe2 ferromagnetic electrodes and a graphene or hexagonal boron nitride (h-BN) spacer layer. boron nitride 246-250 spindlin 1 Homo sapiens 77-81 30644413-2 2019 Recently, the van der Waals material hexagonal boron nitride (h-BN) has emerged as a robust host for quantum emitters, promising efficient photon extraction and atom-scale engineering, but observations of spin-related effects have remained thus far elusive. boron nitride 47-60 spindlin 1 Homo sapiens 205-209 30644413-2 2019 Recently, the van der Waals material hexagonal boron nitride (h-BN) has emerged as a robust host for quantum emitters, promising efficient photon extraction and atom-scale engineering, but observations of spin-related effects have remained thus far elusive. boron nitride 62-66 spindlin 1 Homo sapiens 205-209 29473754-5 2018 This also allows us to devise a concrete protocol for the electrostatic control of the spin polarization of the current by breaking the sublattice symmetry of graphene, by deposition on hexagonal boron nitride, paving the way to switchable spin filters. boron nitride 196-209 spindlin 1 Homo sapiens 87-91 29473754-5 2018 This also allows us to devise a concrete protocol for the electrostatic control of the spin polarization of the current by breaking the sublattice symmetry of graphene, by deposition on hexagonal boron nitride, paving the way to switchable spin filters. boron nitride 196-209 spindlin 1 Homo sapiens 240-244 29286681-0 2017 Spin-Mechanical Scheme with Color Centers in Hexagonal Boron Nitride Membranes. boron nitride 55-68 spindlin 1 Homo sapiens 0-4 27399228-2 2016 Here, we report the efficient guiding of spin currents at room temperature in high mobility hexagonal boron nitride encapsulated bilayer graphene using carrier drift. boron nitride 102-115 spindlin 1 Homo sapiens 41-45 28439541-3 2017 We address this question by manipulating the total spin of magnetic cobalt hydride complexes on a corrugated boron nitride surface with a hydrogen-functionalized scanning probe tip by simultaneously tracking force and conductance. boron nitride 109-122 spindlin 1 Homo sapiens 51-55 24647362-0 2014 Electrical tuning of spin current in a boron nitride nanotube quantum dot. boron nitride 39-52 spindlin 1 Homo sapiens 21-25 23343291-0 2013 Spin-filtering and rectification effects in a Z-shaped boron nitride nanoribbon junction. boron nitride 55-68 spindlin 1 Homo sapiens 0-4 23343291-5 2013 Our results suggest that a BNNR-based nanodevices with spin-filtering and rectification effects may be synthesized from an hexagonal boron nitride sheet by properly tailoring and edge passivation. boron nitride 133-146 spindlin 1 Homo sapiens 55-59 23421142-1 2012 Spin polarized density functional theory has been used to investigate the structural stability and electronic properties of extrinsic and intrinsic defects in boron nitride nanotubes. boron nitride 159-172 spindlin 1 Homo sapiens 0-4