Title : Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics.

Pub. Date : 2016 Aug 22

PMID : 27545201






1 Functional Relationships(s)
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1 We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. Phosphorus MOS proto-oncogene, serine/threonine kinase Homo sapiens