Title : Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors.

Pub. Date : 2015 Dec 16

PMID : 26670138






3 Functional Relationships(s)
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1 Here, ER effect up to 1000% at room temperature is demonstrated in C-MOS compatible MFM nanocapacitors with a 8.8 nm-thick poly(vinylidene fluoride) (PVDF) homopolymer ferroelectric, which is very promising for silicon industry integration. polyvinylidene fluoride MOS proto-oncogene, serine/threonine kinase Homo sapiens
2 Here, ER effect up to 1000% at room temperature is demonstrated in C-MOS compatible MFM nanocapacitors with a 8.8 nm-thick poly(vinylidene fluoride) (PVDF) homopolymer ferroelectric, which is very promising for silicon industry integration. polyvinylidene fluoride MOS proto-oncogene, serine/threonine kinase Homo sapiens
3 Here, ER effect up to 1000% at room temperature is demonstrated in C-MOS compatible MFM nanocapacitors with a 8.8 nm-thick poly(vinylidene fluoride) (PVDF) homopolymer ferroelectric, which is very promising for silicon industry integration. Silicon MOS proto-oncogene, serine/threonine kinase Homo sapiens