Title : N-MOSFETs Formed on Solid Phase Epitaxially Grown GeSn Film with Passivation by Oxygen Plasma Featuring High Mobility.

Pub. Date : 2015 Dec 9

PMID : 26579560






2 Functional Relationships(s)
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1 It has been confirmed that O2 plasma treatment forms a GeSnO(x) film on the surface and the GeSnO(x) topped by in situ Al2O3 constitutes the gate stack of GeSn MOS devices. Oxygen MOS proto-oncogene, serine/threonine kinase Homo sapiens
2 It has been confirmed that O2 plasma treatment forms a GeSnO(x) film on the surface and the GeSnO(x) topped by in situ Al2O3 constitutes the gate stack of GeSn MOS devices. Aluminum Oxide MOS proto-oncogene, serine/threonine kinase Homo sapiens