Title : Reduction process of dislocation and standby leakage current for embedded flash memory using nano-scale integration.

Pub. Date : 2013 Jun

PMID : 23862489






3 Functional Relationships(s)
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Protein Name
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1 A dry oxidation process using only oxygen without hydrogen and oxidation for logic gates led to the formation of a sacrificial oxide on the rapid thermal oxidation (RTP) methods without densification after gap-filling as reducing dislocation processes. Oxygen MORN repeat containing 4 Homo sapiens
2 A dry oxidation process using only oxygen without hydrogen and oxidation for logic gates led to the formation of a sacrificial oxide on the rapid thermal oxidation (RTP) methods without densification after gap-filling as reducing dislocation processes. Hydrogen MORN repeat containing 4 Homo sapiens
3 A dry oxidation process using only oxygen without hydrogen and oxidation for logic gates led to the formation of a sacrificial oxide on the rapid thermal oxidation (RTP) methods without densification after gap-filling as reducing dislocation processes. Oxides MORN repeat containing 4 Homo sapiens