Title : Using a floating-gate MOS transistor as a transducer in a MEMS gas sensing system.

Pub. Date : 2010

PMID : 22163478






2 Functional Relationships(s)
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1 In this paper an in-depth analysis is done regarding the reliability of floating-gate MOS transistors when charge produced by a chemical reaction between metallic oxide thin films with either reducing or oxidizing gases is present. metallic oxide MOS proto-oncogene, serine/threonine kinase Homo sapiens
2 The operation principle of the proposal here presented is confirmed by connecting the gate of a conventional MOS transistor in series with a Fe(2)O(3) layer. fe(2)o(3) MOS proto-oncogene, serine/threonine kinase Homo sapiens