Pub. Date : 2013 Feb
PMID : 23305126
10 Functional Relationships(s)Download |
Sentence | Compound Name | Protein Name | Organism |
| 1 | This paper reports on the evaluation of the impact of introducing interlayers and postmetallization annealing on the graphene/p-GaN ohmic contact formation and performance of associated devices. | Graphite | gigaxonin | Homo sapiens |
| 2 | Direct graphene/p-GaN interface was identified to be highly rectifying and postmetallization annealing improved the contact characteristics as a result of improved adhesion between the graphene and the p-GaN. | Graphite | gigaxonin | Homo sapiens |
| 3 | Direct graphene/p-GaN interface was identified to be highly rectifying and postmetallization annealing improved the contact characteristics as a result of improved adhesion between the graphene and the p-GaN. | Graphite | gigaxonin | Homo sapiens |
| 4 | Direct graphene/p-GaN interface was identified to be highly rectifying and postmetallization annealing improved the contact characteristics as a result of improved adhesion between the graphene and the p-GaN. | Graphite | gigaxonin | Homo sapiens |
| 5 | Direct graphene/p-GaN interface was identified to be highly rectifying and postmetallization annealing improved the contact characteristics as a result of improved adhesion between the graphene and the p-GaN. | Graphite | gigaxonin | Homo sapiens |
| 6 | Temperature-dependent I-V measurements revealed that the current transport was modified from thermionic field emission for the direct graphene/p-GaN contact to tunneling for the graphene/metal/p-GaN contacts. | Graphite | gigaxonin | Homo sapiens |
| 7 | Temperature-dependent I-V measurements revealed that the current transport was modified from thermionic field emission for the direct graphene/p-GaN contact to tunneling for the graphene/metal/p-GaN contacts. | Graphite | gigaxonin | Homo sapiens |
| 8 | Temperature-dependent I-V measurements revealed that the current transport was modified from thermionic field emission for the direct graphene/p-GaN contact to tunneling for the graphene/metal/p-GaN contacts. | Graphite | gigaxonin | Homo sapiens |
| 9 | Temperature-dependent I-V measurements revealed that the current transport was modified from thermionic field emission for the direct graphene/p-GaN contact to tunneling for the graphene/metal/p-GaN contacts. | Graphite | gigaxonin | Homo sapiens |
| 10 | InGaN/GaN light-emitting diodes with NiO(x)/graphene current spreading electrode offered a forward voltage of 3.16 V comparable to that of its Ni/Au counterpart, but ended up with relatively low light output power. | Graphite | gigaxonin | Homo sapiens |